Analysis of polarization plane rotation characteristic in 2D photonic crystal waveguide with chiral medium by condensed node spatial network

Using the photonic band gap in photonic crystals, the fundamental waveguide structures for the light wavelength range have been developed. Based on the fine structure of these many functional devices have been proposed by analytical or numerical simulation methods and the experiments of trial manufacture. In this paper, the treatment of chiral dielectric in the Condensed Node Spatial Network for the vector potential is explained, and we show the polarization plane rotation property in air‐hole and pillar type photonic crystal waveguide structures with the chiral medium substrate. Then, we show the fundamental advantage of the air‐hole type photonic crystal waveguide structure in application to a mode converter. © 2005 Wiley Periodicals, Inc. Electr Eng Jpn, 152(1): 7–14, 2005; Published online in Wiley InterScience ( www.interscience. wiley.com ). DOI 10.1002/eej.20098     

Fabrication of Er3+/Pr3+ Co-doped soda-lime glass thin films using RF magnetron sputtering method and optical property characterization

Er^3+/Pr³⁺ co-doped soda-lime glass thin films have been fabricated using RF magnetron sputtering method and their structural and optical properties have been studied. Deposition rate, crystallinity, and composition of glass thin films were investigated by scanning electron microscopy, transmission electron microscopy, and electron probe micro area analysis. Refractive index, birefringence and binding characteristics have been investigated using a prism coupler and X-ray photoelectron spectroscopy. Er³⁺/Pr³⁺ co-doped soda lime glass thin films were prepared by changing substrate temperature (room temp. ∼550^∘C), RF power (90 W–130 W), and Ar/O₂ gas flow ratio at processing pressure of 4 mTorr. Glass thin films could be obtained at the optimized processing condition at 350^∘C, RF power of 130 W, and gas flow of Ar:O₂ = 40:0 with maximum deposition rate of 1.6 μm/h. Refractive index and birefringence increased from 1.5614 to 1.5838 and from 0.000154 to 0.000552, respectively, as the content of Pr³⁺ increased. Binding energy of Pr3d also increased as the content of Pr³⁺ increased.     

五阶非线性作用下光纤中类明孤子的演化特性

根据含五阶非线性微扰修正项的非线性薛定谔方程,采用变分法,导出了光纤中类明孤子各参数随传输距离演化的方程组,研究了脉宽与距离、啁啾与脉宽之间的关系,并对描述相位和频率的方程组用龙格-库塔算法进行了数值求解.结果表明:五阶非线性使类明孤子的脉宽压缩,可在一定程度上抵消初始啁啾和三阶色散对脉宽的展宽作用;五阶非线性对类明孤子的相位和频率演化特性的影响不明显,因而适度的五阶非线性(γ在0.0001到0.1之间)有利于类明孤子的稳定传输.     

紫外写入法制作阵列波导光栅

提出了一种可能代替传统的利用反应离子刻蚀法（RIE）来制作阵列波导光栅（AWG）的新方法－紫外写入法。对紫外写入法制作AWG的可行性和优缺点进行了分析，设计了AWG的基本参数，并对整个工艺流程进行了设计和优化。最后，报道了本实验组获得的紫外诱导折射率变化值以及用紫外写入法制作的条形波导阵列。     

交叉耦合在直线型波导滤波器中的研究

利用相位关系和交叉耦合的模型,提出了直线型波导滤波器的一种关于交叉耦合的具体实现方法:即在不相邻的腔体之间直接用同轴线引入交叉耦合。采用这种方法设计了一种五腔滤波器,应用HFSS软件进行了仿真验证。结果表明,所设计的滤波器整体结构得到简化,中心频率为8.5 GHz,带宽为150 MHz。     

染料掺杂的聚合物波导膜的制备及电光性质的研究

用溶液沉积的方法制备了染料分散红掺杂的聚苯乙烯膜,并用电场取向的方法对膜中的染料极性分子进行了取向。对取向膜进行的电光测试结果表明取向膜的电光系数r_(33)≈35pm/V较无机晶体要大。     

传输均匀场的加载介质壁矩形波导的研究

本文给出了一种能够传输均匀场的介质壁矩形波导，在数值计算的基础上得出了其结构参数；并进一步分析了加载工作物质对其场型的影响。     

集成光学用单模磁光波导薄膜

采用双层（ＢｉＡｌ）ＹＩＧ膜结构来制作单模磁光波导。通过改变外延生长工艺来调节两层薄膜的折射率，可在一定波导的厚度范围内实现单模传输。Ｘ射线衍射测量表明薄膜质量良好，且易磁化方向平行膜面，最后利用棱镜耦合，观察了波导中的暗ｍ线。     

Conformal Wavelet Finite-difference Time-domain Algorithm for Analysis of Milimeter Wave Attenuation on Coplanar Waveguide

Addressed is the calculation of millimeter wave attenuation on coplanar waveguide（CPW）. A novel conformal wavelet finite-difference time-domain（CWFDTD） algorithm is proposed with emphasis on its application in calculation of millimeter wave attenuation on CPW, which is the combination of conformal algorithm dealing with the deformed cell with Wavelet-FDTD using multi-resolution analysis（MRA）. Derived is the difference formulation for multi-resolution time domain（MRTD） based on Daubechies wavelets, and also given is the stability conditions for wavelet-FDTD algorithm. To validate its accuracy and efficiency, this novel method is applied to calculate the millimeter wave attenuation on lithium niobate CPW. Numerical results demonstrate that this new CWFDTD algorithm has the same accuracy with the conformal finite-difference timedomain（CFDTD） and conformal finite-difference time-domain based on alternating-direction implicit method （ADI-CFDTD）, but saves computational time and computer memory.     

Growth of CsLiB6O10 thin films on Si substrate by pulsed laser deposition using SiO2 and CaF2 as buffer layers

CsLiB₆O₁₀ (CLBO) thin films are grown on Si (100) and (111) substrates using lower index SiO₂ and CaF₂ as buffer layers by pulsed KrF (248 nm) excimer laser ablation of stoichiometric CLBO targets over a temperature range of 425 to 725°C. A CaF₂ buffer layer is grown on Si by laser ablation while SiO₂ is prepared by standard thermal oxidation. From extended x-ray analysis, it is determined that CaF₂ is growth with preferred orientation on Si (100) at temperatures lower than 525°C while on Si (111) substrate, CaF₂ is grown epitaxially over the temperature range; this agrees well with observed reflection high energy electron diffraction patterns. X-ray 2θ-scans indicate that crystalline CLBO are grown on SiO₂/Si and CaF₂/Si (100). Analysis of reflectance spectra from CLBO/SiO₂/Si yields the absorption edge at 182 nm. Surface roughness of the CaF₂ and CLBO/CaF₂/Si film are 19 and 15 nm, respectively. This relatively rough surface caused by the ablation of wide bandgap CaF₂ and CLBO limits the application of CLBO for waveguiding measurement.