Spin Dependent Hopping in Ti Doped La0.67 Ca0.33 MnO3

A systematic investigation of the magnetic and transport properties of Ti doped La0.67Ca0.33MnO3 was reported. The Ti substitution for Mn ions results in a reduction in ferromagnetism and conductivity. The metal-insulator transition temperature is close to Curie temperature which decreases from 274 to 82 K as x increases from 0 to 0.17. The most important effect of Ti doping is to introduce spin clusters in the samples due to the distortion of local lattice and the inhomogeneous magnetic structure induced primarily by the random distribution of Mn ions. A maximum magnetoresistance ratio as large as 90% in 1 T at 122 K was obtained for the sample with x =0. 055, which is four times larger than that obtained for LCMO sample at 272 K. There is a remarkable field-history dependent MR in the cooling process for the doped samples while such phenomenon disappears in the warming run. The resistivity follows well the variable range hopping behavior in paramagnetic state. Both the size effect and spin dependent hopping of carriers between the spin clusters should be considered in this system.     

Lattice Effects and Irreversible Magnetoresistance in Gd Doped La—Ca—Mn—O

The Gd substituting effects for La in La0.67Ca0.33MnO3 has been studied .With increasing the substituting amount of Gd,the phase transition temperature of metal-isolator for the samples decreases,the corresponding peak resistivity increases,the Curie temperature decreases monotonically.The substitution of La-Ca-Mn-O with 11% Gd for La improved the magnetoresistance ratio by an order of magnitude.The effects of substituting Gd can be explained in terms of the lattice effects.An irreversible MR behaviour was observed in Gd-substituting compounds.This effect became marked when the substituting amount of Gd was greater than 7%.A maximum irreversible increment of MR ratio as large as 91% was obtained when Gd substituting amount was 11%.     

Pulse-Width Dependence in Current-Driven Magnetization Reversal Using GaMnAs-Based Double-Barrier Magnetic Tunnel Junction

We have investigated the current pulse width dependence on current-driven magnetization reversal in double-barrier structures using GaMnAs-based magnetic tunneling junctions (MTJ) in order to clarify the origin of low threshold current density for current-driven magnetization reversal. Comparing with the case of single-barrier MTJ, the pulse-width dependence reveals that threshold current density is reduced by double-barrier MTJ. We confirmed that the threshold current density in the order of 10⁴ A/cm² is estimated considering the effect of current pulse width.     

巨磁电阻材料的研究与应用

介绍了一种新型的磁性功能材料－巨磁电阻材料，综述了其研究进展情况。并就它在巨磁电阻传感器、高密度磁记录读出磁头、巨磁电阻随机存储器以及自旋晶体管等磁电子元器件上的进行了论述。     

Magneto-sensitive nickel nanowires fabricated by electrodeposition into multi- and single-ion track templates

Polycarbonate templates of (30±1) μm thickness containing cylindrical etched-track nanochannels of (500±50) nm diameter were used for electrodeposition of Ni nanowires. Using 10⁴ channels per cm², the most favourable deposition potential of  − 1.0 V was determined in a potentiostatic mode by varying the deposition potential with respect to an Ag/AgCl reference electrode over a range between  − 0.1 V and  − 1.5 V. The deposition efficiency at  − 1.0 V was estimated around 10%. The resulting single wires had a resistance around 200 Ω and showed an anisotropic magnetoresistance (AMR) effect of 1%, applicable to directionally sensitive magnetic field sensors.     

B位掺杂钙钛矿结构化合物LaSr2Mn2-xFexO7的电磁性能

研究了以Fe离子(Fe3 )掺杂取代部分锰(Mn)离子的层状钙钛矿结构化合物LaSr2Mn2-xFexO7(O≤x≤O.3)的电性和磁性.结果发现:Fe3 的掺杂抑制了LaSr2Mn2-xFexO7低温的反铁磁性交换作用,使Neel温度TN由x=0的138K降至x=0.3的l0lK.同时,LaSr2Mn2-xFex07的自旋玻璃态、电荷有序和金属一绝缘体转变温度都由于Fe3 取代Mn离子而受到抑制.产生上述现象的原因是因为Mn位被取代导致产生无序状态.由于Fe3 取代Mn粒子,致使双交换作用通道被打破,化合物的电阻率随x的增加而迅速增加.所有化合物的电阻率在低温阶段都可以用Mott的变程跳跃理论来拟合;在高温阶段可以用最近小声子极化理论来拟合.     

退火温度对Co-Ag颗粒膜结构及巨磁电阻效应的影响

采用磁控溅射方法在室温衬底上制备了Co30Ag70(原子百分比)颗粒膜。利用X射线衍射谱(XRD)和四探针方法研究了Co30Ag70颗粒膜沉积态及真空退火后的室温结构和室温巨磁电阻效应。结果表明：沉积态颗粒膜织构较明显，巨磁电阻效应呈现各向异性；随着退火温度的升高，Co30Ag70颗粒膜的微结构发生了演变，导致Co30Ag70颗粒膜的巨磁电阻效应呈现先降后升再降的现象，在473K达到最大值，其值约为-5．7％。     

高阻相对La2／3Ca1／3MnO3低场磁电阻效应的影响

实验研究了La2／3Ca1/3MnO3系统晶界上掺杂(YSZ)对其输运性能和磁电阻效应(MR)的影响。样品是由溶胶．凝胶法制成的。通过对样品的电输运特性的测量表明,在掺杂量(x)低于2％时,掺杂引起电阻的增大并降低了金属．绝缘体转变温度;当掺杂量高于2％时电阻逐渐减小,且转变温度增加。而低场磁电阻效应随掺杂量增加,在x=1％时达到最大。     

MoS2势垒层磁性隧道结的温度-偏压特性研究

MoS₂是一种具有特殊能带结构的二维半导体材料,当层数较少时,其带隙会随层数显著减小。因此,基于MoS₂势垒层的磁性隧道结会展现出更丰富的物理特性。文章通过理论计算分别得到了单层、双层、三层以及五层MoS₂势垒层磁性隧道结的温度-偏压相图,研究了铁磁电极半交换劈裂能对相图特性的影响。计算结果表明：单层和三层MoS₂势垒层磁性隧道结适合应用于低温器件中。其中,单层MoS₂势垒层磁性隧道结在高功率工作环境下具有优异的性能。双层MoS₂势垒层磁性隧道结的优化区域位于室温和低偏压区,因此适用于信息存储领域。五层MoS₂势垒层磁性隧道结可通过调节铁磁电极参数使其工作在较宽的功率范围内。上述研究结果为MoS₂势垒层磁性隧道结的应用奠定了坚实的理论基础。     

35 T强磁场下Cernox和氧化钌温度传感器的磁致电阻效应研究

以Cernox(CX-1050、CX-1030)和氧化钌(RX-202、RX-102)温度传感器为研究对象,研究了其在0—35 T场强、0.75—69.5 K温区下的磁致电阻效应。实验结果表明:CX-1050和RX-202的磁效应和在35 T下的测量误差都随温度的变化出现正负磁效应和正负温度误差交替的现象,且低于10 K时,磁效应随温度的变化率明显增大,在35 T、4.2 K处CX-1050和RX-202的磁效应分别为-6.63%、2.21%;总体来说强磁场下受磁阻影响由小到大分别为RX-202、CX-1050、CX-1030、RX-102,尤其RX-202,在1—35 T、4.2 K以下产生的测量误差小于-0.1 K。Cernox和氧化钌温度传感器受磁场的影响都较小。