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1.
It is shown that virtually all nonlinear and/or time-varying loads that generate harmonic current distortion can be characterized in terms of so-called higher-order circuit elements. The most relevant higher-order elements exploited in this paper are the memristor, meminductor, and memcapacitor. Such elements naturally arise by introducing constitutive relationships in terms of higher-order voltage and current differentials and integrals. Consequently, the power conditioner necessary to compensate for the load current distortions is synthesized similarly. The new characterization and compensation synthesis is applied to the half-wave rectifier and the controlled bridge converter.  相似文献   
2.
In this paper, grounded and floating decremental/incremental memristor emulators have been proposed by using an operational transconductance amplifier (OTA), current differencing buffered amplifier (CDBA), and a grounded capacitor. The proposed memristor emulators are simpler in design over most of the realizations of memristor emulators available in the literature. The proposed configurations of grounded and floating decremental memristor emulators can be easily converted into grounded and floating incremental memristor emulators. The pinched hysteresis loops obtained from proposed memristor emulators are maintained up to 1-MHz frequency in both decremental and incremental configurations. Simulation results have been obtained using a Mentor Graphics Eldo simulation tool in 0.18-μm complementary metal-oxide semiconductor (CMOS) technology parameters. Analog filters have also been designed to verify the performance of proposed grounded and floating memristor emulators.  相似文献   
3.
研究了惠普忆阻器的电荷控制模型,并构建了其SimuIink模型,给出了相应的仿真结果。最后设计了一种基于忆阻器的迟滞比较电路,建立了其SimuIink仿真模型,分析了其仿真结果。此电路简单易用,能应用于多种电路,比如方波和锯齿波产生电路等。它在电路尺寸、电路功耗等方面都有优势。  相似文献   
4.
随着对计算机性能要求的不断提高,人们一直在寻找能像人脑一样具有学习记忆功能的新型计算机。自从2008年惠普实验室发现忆阻器以后,发展具有人脑水平的智能计算机成为可能。众所周知,突触是大脑神经网络的基本单元,突触可塑性是学习和记忆的生物学基础。因此,为了实现具有学习和记忆功能的智能计算机,利用忆阻器模拟突触可塑性至关重要。综述了忆阻器在模拟突触的增强、抑制、短时程可塑性和长时程可塑性方面的研究现状,并对其研究前景进行了展望。  相似文献   
5.
锂电池荷电分布状态(SOC)是衡量电动汽车锂电池状态的工作标准之一。在分析SOC检测技术的基础之上,提出了利用BP神经网络技术来构建电池组SOC数据模型的研究思路。并结合实际的仿真数据对BP神经网络进行了有效的改造,从而形成了以忆阻器为神经元突触的神经网络SOC检测体系。仿真结果表明,该方法适应性好,对实际具有良好的指导作用。  相似文献   
6.
7.
Based on the three-dimensional classic Chua circuit, a nonlinear circuit containing two flux-control memristors is designed. Due to the difference in the design of the characteristic equation of the two magnetron memristors, their position form a symmetrical structure with respect to the capacitor. The existence of chaotic properties is proved by analyzing the stability of the system, including Lyapunov exponent, equilibrium point, eigenvalue, Poincare map, power spectrum, bifurcation diagram et al. Theoretical analysis and numerical calculation show that this heterogeneous memristive model is a hyperchaotic five-dimensional nonlinear dynamical system and has a strong chaotic behavior. Then, the memristive system is applied to digital image and speech signal processing. The analysis of the key space, sensitivity of key parameters, and statistical character of encrypted scheme imply that this model can applied widely in multimedia information security.  相似文献   
8.

忆阻器模型的初相特征与抗干扰性能

张驰,罗志彬,金湘亮

(湖南师范大学 物理与电子科学学院,长沙 410081)

摘要:

忆阻器是用来描述电流与磁通量之间关系的一种电子器件。现已有三种较经典的忆阻器理想模型以及相关的一些分析。但是对每一种模型的抗干扰性能与每种模型的优缺点仍缺少相应的对比分析,故有必要去仿真并对比各种模型。本文在matlab仿真软件中向各忆阻器模型加入噪声信号,以得到相应的特性曲线,从而分析各模型的抗干扰性能。仿真结果表明,HP模型展现了最佳的抗干扰性能。此外,当改变输入信号初相时,只有HP模型可以保持其忆阻特征;当改变输入信号数量时,只有HP模型可以保持其原有的精确度。

关键词:忆阻器;输入信号;噪声分析;精确度

  相似文献   
9.
The paper considers a feedback cellular neural network (CNN) obtained by interconnecting elementary cells with an ideal capacitor and an ideal flux‐controlled memristor. It is supposed that during the analogue computation of the CNN the memristors behave as dynamic elements, so that each dynamic memristor (DM)‐CNN cell is described by a second‐order differential system in the state variables given by the capacitor voltage and the memristor flux. The proposed networks are called DM‐CNNs, that is CNNs using a dynamic (D) memristor (M). After giving a foundation to the DM‐CNN model, the paper establishes a fundamental result on complete stability, that is convergence of solutions toward equilibrium points, when the DM‐CNN has symmetric interconnections. Because of the presence of dynamic memristors, a DM‐CNN displays peculiar and basically different dynamic properties with respect to standard CNNs. First of all a DM‐CNN computes during the time evolution of the memristor fluxes, instead of the capacitor voltages as for a standard CNN. Furthermore, when a steady state is reached, the memristors keep in memory the result of the computation, that is the limiting values of the fluxes, while all memristor currents and voltages, as well as all currents, voltages, and power in the DM‐CNN vanish. Instead, for standard CNNs, currents, voltages, and power do not drop off when a steady state is reached. Copyright © 2016 John Wiley & Sons, Ltd.  相似文献   
10.
Memristors have attracted broad interest as a promising candidate for future memory and computing applications. Particularly, it is believed that memristors can effectively implement synaptic functions and enable efficient neuromorphic systems. Most previous studies, however, focus on implementing specific synaptic learning rules by carefully engineering external programming parameters instead of focusing on emulating the internal cause that leads to the apparent learning rules. Here, it is shown that by taking advantage of the different time scales of internal oxygen vacancy (VO) dynamics in an oxide‐based memristor, diverse synaptic functions at different time scales can be implemented naturally. Mathematically, the device can be effectively modeled as a second‐order memristor with a simple set of equations including multiple state variables. Not only is this approach more biorealistic and easier to implement, by focusing on the fundamental driving mechanisms it allows the development of complete theoretical and experimental frameworks for biologically inspired computing systems.  相似文献   
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