一维ZnO纳米结构的电子场发射研究

在大量制备一维ZnO纳米结构的基础上,研究了这些纳米结构的场发射性能。对于四角状ZnO纳米结构,获得1.0m Ac/m2的电流密度只需要4.5V/μm的电场;对于线状Z nO纳米结构,获得1.0mAc/m 2的电流密度需要6.5V/μm的电场。由于其特殊的结构,四角状ZnO一维纳米结构在真空电子器件方面有很好的应用前景。     

Novel one-step formed composite reinforcement of "Spider web like" SiCnw networks and "Z-pins like" SiC rods for ablation resistance improvement of C/C-ZrC-SiC

A novel composite reinforcement with horizontal multilayer "Spider web like" SiC nanowire networks and vertical interconnected "Z-pins like" SiC rods was designed and prepared by facile one-step figuration. The linear ablation rate of "Spider web like" SiC nanowire networks and "Z-pins like" SiC rods collectively reinforced C/C-ZrC-SiC composites at 2610 ± 20 ℃ was 0.4 ± 0.03 μm/s with a 74.19 % reduction. The improved ablation resistance was attributed to a denser gradient oxide layer composed of central ZrO₂ layer, transitional ZrO₂-SiO₂ layer and marginal SiO₂ layer generated under the initial sticky net effect from SiCnw networks and subsequent oxide compensation from "Z-pins like" SiC rods.     

Microstructure and ablation performance of HfC/PyC core-shell structure nanowire-reinforced Hf1-xZrxC coating

To improve the ablation performance of C/C composites, HfC/PyC core-shell structure nanowire (HfCnw/PyC)-reinforced Hf_1-xZr_xC coating was prepared via three-step chemical vapor deposition (CVD) method. Effects of HfCnw/PyC and PyC layer thickness on the microstructure, residual stress and ablation performance of Hf_1-xZr_xC coating were studied. HfCnw/PyC-reinforced coatings exhibited equiaxial crystal structure. After incorporating HfCnw/PyC, ablation property of Hf_1-xZr_xC coating was enhanced because of the skeleton role of HfO₂ nanowires. PyC possessed low coefficient of thermal expansion (CTE) and high heat conductivity, but poor ablation performance. Hence, with the increase in thickness of PyC layer, ablation property of the coating first increased and then decreased. HfCnw/PyC-reinforced Hf_1-xZr_xC coating with PyC layer thickness of about 50 nm exhibited the best ablation property.     

纳米金丝电导量子效应

综述了纳米金丝电导量子效应的基本概念，介绍了金丝电导研究背景及现状，并从理论上分析了电导量子效应的机理。介绍了用STM和MCBJ等工具对纳米金丝的原子基链进行的研究。纳米金丝原子基链的电导是量子化的，量子电导受到包括电场、磁场、温度等各种因素的影响。在综述的基础之上，提出了该领域未解决的科学问题并指出了该领域未来的发展方向。     

Monolithically integrated CoP nanowire array: An on/off switch for effective on-demand hydrogen generation via hydrolysis of NaBH<Subscript>4</Subscript> and NH<Subscript>3</Subscript>BH<Subscript>3</Subscript>

The issues of hydrogen generation and storage have hindered the widespread use and commercialization of hydrogen fuel cell vehicles.It is thus highly attractive,but the design and development of highly active non-noble-metal catalysts for on-demand hydrogen release from alkaline NaBH4 solution under mild conditions remains a key challenge.Herein,we describe the use of CoP nanowire array integrated on a Ti mesh (CoP NA/Ti) as a three-dimensional (3D) monolithic catalyst for efficient hydrolytic dehydrogenation of NaBH4 in basic solutions.The CoP NA/Ti works as an on/off switch for on-demand hydrogen generation at a rate of 6,500 mL/(min.g) and a low activation energy of 41 kJ/mol.It is highly robust for repeated usage after recycling,without sacrificing catalytic performance.Remarkably,this catalyst also performs efficiently for the hydrolysis of NH3BH3.     

Growth and optical properties of In x Ga1−x P nanowires synthesized by selective-area epitaxy

Ternary Ⅲ-Ⅴ nanowires (NWs) cover a wide range of wavelengths in the solar spectrum and would greatly benefit from being synthesized as position-controlled arrays for improved vertical yield,reprodudbility,and tunable optical absorption.Here,we report on successful selective-area epitaxy of metal-particle-free vertical InxGa1-xP NW arrays using metal-organic vapor phase epitaxy and detail their optical properties.A systematic growth study establishes the range of suitable growth parameters to obtain uniform NW growth over a large array.The optical properties of the NWs were characterized by room-temperature cathodoluminescence spectroscopy.Tunability of the emission wavelength from 870 nm to approximately 800 nm was achieved.Transmission electron microscopy and energy dispersive X-ray measurements performed on crosssection samples revealed a pure wurtzite crystal structure with very few stacking faults and a slight composition gradient along the NW growth axis.     

Inducing imperfections in germanium nanowires

Nanowires with inhomogeneous heterostructures such as polytypes and periodic twin boundaries are interesting due to their potential use as components for optical,electrical,and thermophysical applications.Additionally,the incorporation of metal impurities in semiconductor nanowires could substantially alter their electronic and optical properties.In this highlight article,we review our recent progress and understanding in the deliberate induction of imperfections,in terms of both twin boundaries and additional impurities in germanium nanowires for new/enhanced functionalities.The role of catalysts and catalyst-nanowire interfaces for the growth of engineered nanowires via a three-phase paradigm is explored.Three-phase bottom-up growth is a feasible way to incorporate and engineer imperfections such as crystal defects and impurities in semiconductor nanowires via catalyst and/or interfacial manipulation."Epitaxial defect transfer"process and catalyst-nanowire interfacial engineering are employed to induce twin defects parallel and perpendicular to the nanowire growth axis.By inducing and manipulating twin boundaries in the metal catalysts,twin formation and density are controlled in Ge nanowires.The formation of Ge polytypes is also observed in nanowires for the growth of highly dense lateral twin boundaries.Additionally,metal impurity in the form of Sn is injected and engineered via third-party metal catalysts resulting in above-equilibrium incorporation of Sn adatoms in Ge nanowires.Sn impurities are precipitated into Ge bi-layers during Ge nanowire growth,where the impurity Sn atoms become trapped with the deposition of successive layers,thus giving an extraordinary Sn content (＞6 at.％) in Ge nanowires.A larger amount of Sn impingement (＞9 at.％) is further encouraged by utilizing the eutectic solubility of Sn in Ge along with impurity trapping.