Electron tunneling in MIS capacitors with the MBE-grown fluoride layers on Si(1 1 1) and Ge(1 1 1): Role of transverse momentum conservation

The current-voltage characteristics of the metal-insulator-semiconductor tunneling structures with calcium fluoride are simulated using different theoretical models. The results are compared to the data of current measurements on the fabricated capacitors with 1-3 nm epitaxial fluorides. Best agreement is achieved imposing a condition of transverse momentum k_⊥ conservation for a tunneling electron. This fact may be treated as an experimental proof for the k_⊥ conservation in the examined high-quality structures which was not directly confirmed on more traditional structures with oxide dielectrics.     

Photocurrent amplification effect of the fet gate p–n junction

A superlinear increase in the light current of the gate with an increase in the exciting integral light intensity (from 100 to 1000 lx) has been revealed experimentally. This superlinear increase is due to the increase in the internal gradient field generated by the minority carriers by the cutoff voltage of the gate leading to an additional interband generation of photocarriers. On the basis of the investigation of the dependence of photocurrent on the cutoff voltage it has been shown that the photocurrent increases linearly, which is explained by the creation of an internal electric field by the majority carriers of the base zone of the gate p–n junction. Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 82, No. 1, pp. 191–198, January–February, 2009.     

基于C8051F005无人驾驶系统的设计

智能汽车是本世纪的新型交通工具，可以实现自动发现前方障碍物后主动避让，在陌生地区可以自动导航引路，甚至自动驾驶等功能。介绍了基于C8051F005单片机的嵌入式系统在无人驾驶车辆中应用的工作原理，设计方法，给出了紊统框图并讨论了工作过程，包括超声波测距自动避障电路，光电耦合器检测路面标记实现自动变速行驶电路。     

基于MSP430的太阳光源跟踪控制系统设计

为了提高太阳能电池板的能量转换效率,提出了一种基于MSP430的太阳光源跟踪控制系统。系统设计原理采用光强比较法,硬件部分设计了光强信号采集电路、以MSP430为核心的主控制器、步进电机驱动电路等;软件部分采用模块化编程,加入数字滤波和控制算法。系统实现了刘信号采集与处理、电机驱动等模块的控制,能够快速准确跟踪太阳光源。运行实验结果表明,系统运行稳定,控制灵活,达到预期的设计目标。     

双异质结单载流子传输光敏晶体管输出电流

详细对比并分析了双异质结单载流子传输光敏晶体管(Uni-travelling-carrier Double Heterojunction Phototransistor,UTC-DHPT)与单异质结光敏晶体管(Single Heterojunction Phototransistor,SHPT)在大的入射光功率范围下集电极输出电流特性.首先,UTC-DHPT仅选取窄带隙重掺杂的基区作为吸收区,与SHPT选取基区和集电区作为吸收区相比,其光吸收区厚度小,在小功率入射光下UTC-DHPT的输出电流小于SHPT的输出电流.其次,由于UTCDHPT的双异质结结构,光生电子和光生空穴产生于基区,减弱了SHPT因光生空穴在集电结界面积累而产生的空间电荷效应,避免了SHPT在小功率入射光下输出电流开始饱和的问题,从而UTC-DHPT获得了比SHPT更大的准线性工作范围.最后,UTC-DHPT的单载流子(电子)传输方式使得基区产生的光生空穴以介电弛豫的方式到达发射结界面,有效降低了发射结势垒,增加了单位时间内由发射区传输到基区的电子数量,提高了其发射结注入效率,在大功率入射光下UTC-DHPT比SHPT能获得更高的输出电流.     

Ultra‐Thin Layered Ternary Single Crystals [Sn(SxSe1−x)2] with Bandgap Engineering for High Performance Phototransistors on Versatile Substrates

2D ternary semiconductor single crystals, an emerging class of new materials, have attracted significant interest recently owing to their great potential for academic interest and practical application. In addition to other types of metal dichalcogenides, 2D tin dichalcogenides are also important layered compounds with similar capabilities. Yet, multi‐elemental single crystals enable to assist multiple degrees of freedom for dominant physical properties via ratio alteration. This study reports the growth of single crystals Se‐doped SnS₂ or SnSSe alloys, and demonstrates their capability for the fabrication of phototransistors with high performance. Based on exfoliation from bulk high quality single crystals, this study establishes the characteristics of few‐layered SnSSe in structural, optical, and electrical properties. Moreover, few‐layered SnSSe phototransistors are fabricated on both rigid (SiO₂/Si) and versatile polyethylene terephthalate substrates and their optoelectronic properties are examined. SnSSe as a phototransistor is demonstrated to exhibit a high photoresponsivity of about 6000 A W^?1 with ultra‐high photogain ≈8.8 × 10⁵, fast response time ≈9 ms, and specific detectivity (D*) ≈8.2 × 10¹² J. These unique features are much higher than those of recently published phototransistors configured with other few‐layered 2D single crystals, making ultrathin SnSSe a highly qualified candidate for next‐generation optoelectronic applications.     

High-mobility pentacene phototransistor with nanostructured SiO2 gate dielectric synthesized by sol-gel method

We have fabricated a pentacene based phototransistor by employing a modified nanostructured SiO₂ gate dielectric. The photosensing properties of the pentacene thin film transistor fabricated on n-Si substrate with nanostructured SiO₂ as gate dielectric have been investigated. The photocurrent of the transistor increases with an increase in illumination intensity. This suggests that the pentacene thin film transistor behaves as a phototransistor with p-channel characteristics. The photosensitivity and responsivity values of the transistor are 630.4 and 0.10 A/W, respectively at the off state under AM 1.5 light illumination. The field effect mobility of the pentacene phototransistor was also found to be 2.96 cm²/Vs. The nanostructured surface of the gate possibly is the cause of the high-mobility value of the phototransistor due to light scattering from the increased surface area.     

RTD/HPT光控单-双稳转换逻辑单元

以光接收器件代替RTD MOBILE(RTD单-双稳转换逻辑单元)电路中的HEMT或HBT,可构成光控MOBILE电路。在比较了四种光控MOBILE结构的基础上,选择RTD/HPT光控结构,重点分析讨论了RTD/HPT光控MOBILE的工作原理,当光控MOBILE的输入光功率超过一个临界值时,MOBILE的输出电压便会从高电平跳变到低电平;由HPT光增益理论分析了提高HPT性能的措施以及HPT设计中应该注意的问题;介绍了以Si光三极管代替HPT,通过模拟实验,验证了RTD/HPT光控MOBILE的逻辑功能。