Dynamic Oscillation via Negative Differential Resistance in Type III Junction Organic/Two-Dimensional and Oxide/Two-Dimensional Transition Metal Dichalcogenide Diodes

Among many of 2D semiconductor-based devices, type III PN junction diodes are given special attentions due to their unique function, negative differential resistance (NDR). However, it has been found uneasy to achieve well-matched type III PN junctions from 2D–2D van der Waals heterojunctions. Here, the authors present other alternatives of type III heterojunctions, using 2D p-MoTe₂/organic n-type dipyrazino[2,3-f:2′,3′-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile (HAT-CN) and 2D p-WSe₂/n-MoO_x systems. Those junction diodes appear to well-demonstrate static and dynamic NDR behavior via resonant tunneling and electron–hole recombination. Extended to an inverter circuit, p-MoTe₂/n-HAT-CN diode enables multilevel inverter characteristics as monolithically integrated with p-MoTe₂ channel field effect transistor. The same NDR diode shows dynamic LC oscillation behavior under a constant DC voltage, connected to an external inductor. From p-WSe₂/n-MoO_x oxide diode, similar NDR behavior to those of p-MoTe₂/n-HAT-CN is again observed along with LC oscillations. The authors attribute these visible oscillation results to high peak-to-valley current ratios of their organic or oxide/2D heterojunction diodes.     

Rice spike-like g-C3N4/TiO2 heterojunctions with tight-binding interface by using sodium titanate ultralong nanotube as precursor and template

A novel rice spike-like g-C₃N₄/TiO₂ nanowire heterojunctions are fabricated by hydrothermal treating Na₂Ti₃O₇ ultralong nanotubes in the presence of g-C₃N₄. The presence of g-C₃N₄ promotes the hydrolysis of Na₂Ti₃O₇ ultralong nanotubes. The partially replaced O of TiO₂ by N from g-C₃N₄ leads to the formation of a tight-binding interface between one dimensional TiO₂ and two dimensional g-C₃N₄, which is crucial for fast and effective transfer of photogenerated electrons in heterostructured photocatalysts. As a result, the g-C₃N₄/TiO₂ nanowire heterojunctions exhibit excellent visible-light photocatalytic activity. The kinetic constant (k) of g-C₃N₄/TiO₂ (0.024?min^?1) for degradation of methylene blue under visible light irradiation is 1.85 and 4 times than that of pure g-C₃N₄ and P25, respectively.     

Enhancement in Organic Photovoltaic Efficiency through the Synergistic Interplay of Molecular Donor Hydrogen Bonding and π‐Stacking

For organic photovoltaic (OPV) cells based on the bulk heterojunction (BHJ) structure, it remains challenging to rationally control the degree of phase separation and percolation within blends of donors and acceptors to secure optimal charge separation and transport. Reported is a bottom‐up, supramolecular approach to BHJ OPVs wherein tailored hydrogen bonding (H‐bonding) interactions between π‐conjugated electron donor molecules encourage formation of vertically aligned donor π‐stacks while simultaneously suppressing lateral aggregation; the programmed arrangement facilitates fine mixing with fullerene acceptors and efficient charge transport. The approach is illustrated using conventional linear or branched quaterthiophene donor chromophores outfitted with terminal functional groups that are either capable or incapable of self‐complementary H‐bonding. When applied to OPVs, the H‐bond capable donors yield a twofold enhancement in power conversion efficiency relative to the comparator systems, with a maximum external quantum efficiency of 64%. H‐bond promoted assembly results in redshifted absorption (in neat films and donor:C₆₀ blends) and enhanced charge collection efficiency despite disparate donor chromophore structure. Both features positively impact photocurrent and fill factor in OPV devices. Film structural characterization by atomic force microscopy, transmission electron microscopy, and grazing incidence wide angle X‐ray scattering reveals a synergistic interplay of lateral H‐bonding interactions and vertical π‐stacking for directing the favorable morphology of the BHJ.     

Time‐of‐Flight Studies of Electron‐Collection Kinetics in Polymer:Fullerene Bulk‐Heterojunction Solar Cells

The charge‐collection dynamics in poly(3‐hexylthiophene:[6,6]‐phenyl‐C₆₁‐butyric acid methyl ester (P3HT:PCBM) bulk heterojunctions are studied in thick (>1 μm) devices using time‐of‐flight measurements and external quantum‐efficiency measurements. The devices show Schottky‐diode behavior with a large field‐free region in the device. Consequently, electron transport occurs by diffusion in the bulk of the active layer. At high applied biases where the depletion region spans the entire active layer, normal time‐of‐flight transients are observed from which the electron mobility can be determined. Here, the electron mobility follows Poole–Frenkel behavior as a function of field. At lower applied biases, where the depletion region only spans a small portion of the active layer, due to a high density of dark holes, the recombination kinetics follow a first‐order rate law with a rate constant about two orders of magnitude lower than that predicted by Langevin recombination.     

Solution‐Processed Small‐Molecule Bulk Heterojunction Ambipolar Transistors

Solution‐processed small‐molecule bulk heterojunction (BHJ) ambipolar organic thin‐film transistors are fabricated based on a combination of [2‐phenylbenzo[d,d']thieno[3,2‐b;4,5‐b']dithiophene (P‐BTDT) : 2‐(4‐n‐octylphenyl)benzo[d,d ']thieno[3,2‐b;4,5‐b']dithiophene (OP‐BTDT)] and C₆₀. Treating high electrical performance vacuum‐deposited P‐BTDT organic semiconductors with a newly developed solution‐processed organic semiconductor material, OP‐BTDT, in an optimized ratio yields a solution‐processed p‐channel organic semiconductor blend with carrier mobility as high as 0.65 cm² V^?1 s^?1. An optimized blending of P‐BTDT:OP‐BTDT with the n‐channel semiconductor, C₆₀, results in a BHJ ambipolar transistor with balanced carrier mobilities for holes and electrons of 0.03 and 0.02 cm² V^?1 s^?1, respectively. Furthermore, a complementary‐like inverter composed of two ambipolar thin‐film transistors is demonstrated, which achieves a gain of 115.     

Benzobisthiazole as Weak Donor for Improved Photovoltaic Performance: Microwave Conductivity Technique Assisted Molecular Engineering

New donor–acceptor‐type copolymers comprised of benzobisthiazole (BBTz) as a weak donor rather than acceptor are proposed. This approach can simultaneously lead to deepening the HOMO and LUMO of the polymers with moderate energy offset against fullerene derivatives in bulk heterojunction organic photovoltaics. As a proof‐of‐concept, BBTz‐based random copolymers conjugated with typical electron acceptors: thienopyrroledione (TPD) and benzothiadiazole (BT) based on density functional theory calculations are synthesized. Laser‐flash and Xe‐flash time‐resolved microwave conductivity (TRMC) evaluations of polymer:[6,6]‐phenyl C₆₁ butyric acid methyl ester (PCBM) blends are conducted to screen the feasibility of the copolymers, leading to optimization of processing conditions for photovoltaic device application. According to the TMRC results, alternating BBTz‐BT copolymers are designed, exhibiting extended photoabsorption up to ca. 750 nm, deep HOMO (–5.5 to –5.7 eV), good miscibility with PCBM, and inherent crystalline nature. Moreover, the maximized PCE of 3.8%, the top‐class among BBTz‐based polymers reported so far, is realized in an inverted cell using TiO_x and MoO_x as the buffer layers. This study opens up opportunities to create low‐bandgap polymers with deep HOMO, and shows how the device‐less TRMC evaluation is of help for decision‐making on judicious molecular design.