Nonlinearity in regulating the metal to insulator transition of ReNiO3 towards low temperature range

Among the existing material family of the correlated oxides, the rare earth nickelates (ReNiO₃) exhibit broadly adjustable metal to insulator transition (MIT) properties that enables correlated electronic applications, such as thermistors, thermochromics, and logical devices. Nevertheless, how to accurately control the critical temperature (T_MIT) of ReNiO₃ via the co-occupation of the rare-earth elements is yet worthy to be further explored. Herein, we demonstrate the non-linearity in adjusting the T_MIT of ReNiO₃ towards lower temperatures via introducing Pr co-occupation within ReNiO₃ (e.g., Pr_xNd_1-xNiO₃ and Pr_xSm_1-xNiO₃) as synthesized by KCl molten-salt assisted high oxygen pressure reaction approach. Although the T_MIT is effectively reduced via Pr substitution, it does not strictly follow a linear relationship, in particular, when there is large difference in the ionic radius of the co-occupation rare-earth elements. Furthermore, the most significant deviation in T_MIT from the expected linear relationship appears at an equal co-occupation ratio of the two different rare-earth elements, while the abruption in the variation of resistivity across T_MIT is also reduced. The present work highlights the importance to use adjacent rare-earth elements with co-occupation ratio away from 1:1 for achieving more linear adjustment in designing the metal to insulator transition properties for ReNiO₃.     

多晶硅表面金属催化化学腐蚀法制绒研究现状

在多晶硅太阳能电池的生产过程中, 金刚线切割技术(Diamond wire sawn, DWS)具有切割速度快、精度高、原材料损耗少等优点, 受到了广泛关注。金刚线切割多晶硅表面形成的损伤层较浅, 与传统的酸腐蚀制绒技术无法匹配, 金属催化化学腐蚀法应运而生。金属催化化学腐蚀法制绒具有操作简单、结构可控且易形成高深宽比的绒面等优点, 具有广阔的应用前景。本文总结了不同类型的金属催化剂在制绒过程中的腐蚀机理及其形成的绒面结构, 深入分析和讨论了具有代表性的银、铜的单一及复合催化腐蚀过程及绒面结构和电池片性能。最后对金刚线切割多晶硅片表面的金属催化化学腐蚀法存在的问题进行了分析, 并展望了未来的研究方向。     

Investigation on thermal conductivity and mechanical properties of Si3N4 ceramics via one-step sintering

High thermal conductivity Si₃N₄ ceramics were fabricated using a one-step method consisting of reaction-bonded Si₃N₄ (RBSN) and post-sintering. The influence of Si content on nitridation rate, β/(α+β) phase rate, thermal conductivity and mechanical properties was investigated in this work. It is of special interest to note that the thermal conductivity showed a tendency to increase first and then decrease with increasing Si content. This experimental result shows that the optimal thermal conductivity and fracture toughness were obtained to be 66 W (m K)^-1 and 12.0 MPa m^1/2, respectively. As a comparison, the nitridation rate and β/(α+β) phase rate in a static pressure nitriding system, i.e., 97% (MS10), 97% (MS15), 97% (MS20) and 8.3% (MS10), 8.3% (MS15), 8.9% (MS20), respectively, have obvious advantages over those in a flowing nitriding system, i.e., 91% (MS10), 91% (MS15), 93% (MS20) and 3.1% (MS10), 3.3% (MS15), 3.3% (MS20), respectively. Moreover, high lattice integrity of the β-Si₃N₄ phase was observed, which can effectively confine O atoms into the β-Si₃N₄ lattice using MgO as a sintering additive. This result indicates that one-step sintering can provide a new route to prepare Si₃N₄ ceramics with a good combination of thermal conductivity and mechanical properties.     

High performance H2 sensor based on rGO-wrapped SnO2–Pd porous hollow spheres

Hydrogen (H₂) sensors based on metal oxide semiconductors (MOS) are promising for many applications such as a rocket propellant, industrial gas and the safety of storage. However, poor selectivity at low analyte concentrations, and independent response on high humidity limit the practical applications. Herein, we designed rGO-wrapped SnO₂–Pd porous hollow spheres composite (SnO₂–Pd@rGO) for high performance H₂ sensor. The porous hollow structure was from the carbon sphere template. The rGO wrapping was via self-assembly of GO on SnO₂-based spheres with subsequent thermal reduction in H₂ ambient. This sensor exhibited excellently selective H₂ sensing performances at 390 °C, linear response over a broad concentration range (0.1–1000 ppm) with recovery time of only 3 s, a high response of ～8 to 0.1 ppm H₂ in a minute, and acceptable stability under high humidity conditions (e. g. 80%). The calculated detection limit of 16.5 ppb opened up the possibility of trace H₂ monitoring. Furthermore, this sensor demonstrated certain response to H₂ at the minimum concentration of 50 ppm at 130 °C. These performances mainly benefited from the special hollow porous structure with abundant heterojunctions, the catalysis of the doped-PdO_x, the relative hydrophobic surface from rGO, and the deoxygenation after H₂ reduction.     

铌对取向硅钢冷轧组织织构的影响

采用光学显微镜(OM)、电子背散射衍射(EBSD)等研究了铌对取向硅钢冷轧过程中的组织与织构的影响。结果表明:含铌正火板和不含铌正火板经冷轧后都是条带状组织,但含铌冷轧板在宽度方向更窄。铌元素的存在对织构也具有优化作用,经过中间退火后,含铌冷轧板二次冷轧织构得到明显改善,相较于不含铌二次冷轧板拥有强度较低的旋转立方织构以及强度较高的{111}<112>织构,其取向密度最高可达12.460。     

硅量子点荧光传感器快速检测鲜奶中的四环素

建立以硅量子点(silicon quantum dot,SiQDs)为荧光传感器快速检测四环素的新方法,以N-(β-氨乙基)-γ-氨丙基甲基二甲氧基硅烷为硅源,柠檬酸为还原剂,采用水热法合成SiQDs;通过透射电镜(transmission electron microscope,TEM)和光谱分析法研究其形貌结构和光学特性;利用四环素能有效地猝灭SiQDs荧光,构建荧光传感器用于四环素检测。结果显示,所制备的SiQDs呈球形、稳定性高,水溶性好。在优化的实验条件下,方法的线性范围为0.05~90μmol/L,检出限为18 nmol/L,用于生鲜牛奶样品测定,加标回收率为92.36%~104.07%。该方法简便、快速、灵敏,适于鲜奶中四环素的准确测定。     

多层圆片级堆叠THz硅微波导结构的制作

基于微电子机械系统(MEMS)工艺,提出一种多层圆片堆叠的THz硅微波导结构及其制作方法。为了验证该结构在制作THz无源器件中的优势,基于6层圆片堆叠的硅微波导结构,设计了一种中心频率365 GHz、带宽80 GHz的功率分配/合成结构,并对其进行了仿真。研究了制作该结构的工艺流程,攻克了工艺过程中的关键技术,包括硅深槽刻蚀技术和多层热压键合技术,并给出了工艺结果。最终实现了多层圆片堆叠功率分配/合成结构的工艺制作和测试。测试结果表明,尽管样品的插入损耗较仿真值增加3 dB左右,考虑到加工误差和夹具损耗等情况,样品主要技术指标与设计值较为一致。     

介孔分子硅剂改善茶浓缩膜结构特性应用研究

为有效提高功能性茶浓缩反渗透膜的回收效率和抗污性能,探究了3种介孔分子硅材料(MCM-41、SBA-15和MCFs)对浓缩膜面聚酰胺层聚合形成过程的结构影响。结果表明,添加质量分数0.02%经磺化预处理的MCM-41于间苯二胺水相可接枝酰氯基团,形成的聚酰胺结构层峰谷粗糙跨度仅为220 nm且交联紧致,膜抗拉伸强度增加37.8%;SBA-15和MCFs相膜面峰谷跨度达500~780 nm,横向褶皱和团聚,结构存在孔道塌陷;改性膜在3 h内对茶多酚、茶多糖、茶蛋白即可达到最大浓缩度,减少50%浓缩时间;MCM-41和SBA-15膜长时间运行的浓缩降率仅为2.8%~6.1%,48 h下降率比显示改性膜达标使用时长增加112.5%~137.5%,亲水性和抗污堵能力均大幅提升,可有效满足功能化茶浓缩精度。     

Electrical oscillation generation with current-induced resistivity switching in VO2 micro-channel devices

We report large amplitude modulation waveforms as large as ~ 10 V using vanadium dioxide micro-channel devices operating under current-controlled conditions. The self-sustained electrical oscillations were generated by controlling the applied current in the negative differential resistance region of the investigated devices. An appropriate value of internal capacitance was achieved as parasitic capacitance in the device structure to stabilize the electrical oscillations. This eliminates the need of an external pulsed source or any external passive component connected to the micro-channel devices. Amplitude and frequency of the oscillation were tuned by illuminating the device micro-channel with an external laser. An equivalent circuit model was developed to simulate the waveforms. A good agreement between experiment and simulation was verified.