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1.
基于FPGA的100MHz近红外单光子探测器   总被引:6,自引:6,他引:0  
为克服InGaAs/InP雪崩二极管(APD)光电探测器的后脉冲现象,本文提出了基于FPGA的单光子探测器(SPD)测量系统,其门控频率最高可达100MHz,门控宽度最窄可到1ns,死区时间设定为109ns,并且这些参数都易于调节且有助于减少后脉冲概率。实验结果表明:在以上门控条件并且制冷温度为218K时,探测器的有效门宽为0.79ns;在死区时间超过109ns时,后脉冲现象可忽略;最大光子探测效率(PDE)约为14%;在光子探测效率为10%时,暗计数率(DCR)约为2×10-5/ns;并具有小型化、易调节的特点。  相似文献
2.
全硅片上光互连用波导   总被引:1,自引:0,他引:1  
较详细地分析了用于全硅片上光互连所用光波导(如多晶Si/SiO2、Si/SiO2、Si3N4/SiO2)需满足的基本条件、制作方法以及损耗机制,总结了目前的研究进展。  相似文献
3.
Si基OLED微显示器阳极图案化研究   总被引:1,自引:1,他引:0  
在传统的Si基OLED微显示器像素阳极工艺流程基础上,提出利用互补金属氧化物半导体(CMOS)工艺制作像素阳极的一次图案化工艺,从而精简工艺流程,节省投资。分析了常规CMOS工艺中Al作为像素阳极表面材料对OLED微显示器光电性能的影响,开发了一种Si芯片作为微显示器基板,最小像素面积为12mm×4mm,在其表面制作有机发光材料,形成Si基OLED微显示器。实验结果表明,在5V驱动电压下,本文研制的OLED微显示器发光强度可达1 000cd/m2以上,电流密度0.1mA/mm2以上,光电响应速度280ns以下,表明利用常规CMOS工艺开发Si基微显示器的可行性。  相似文献
4.
一种用于白光LED驱动的电荷泵的设计   总被引:1,自引:0,他引:1  
徐静萍 《半导体技术》2011,36(10):795-799
提出了一种可用于白光LED驱动芯片的电路设计,主要从低噪声、高效率两方面进行设计。采用线性模式控制方法,最大限度减小电荷泵电源电流纹波,从而降低噪声,同时应用多增益工作模式提高不同输入电源电压下的效率。详细讨论了其中带隙电压基准、振荡器及跨导放大器三大模块的电路结构、工作原理和性能特点。采用此电荷泵电路的芯片已在CSMC0.6μm CMOS工艺线投片,测试结果表明,该电荷泵电路工作良好,有效减小了PCB面积和降低了噪声,并且在不同输入电源电压下均能保持较高效率,输出在200 mA时,效率可达92%。  相似文献
5.
A single Complementary Metal Oxide Semiconductor (CMOS) image sensor based on 0.35 μm process along with its design and implementation is introduced in this paper. The pixel architecture of Active Pixel Sensor (APS) is used in the chip, which comprises a 256×256 pixel array together with column amplifiers, scan array circuits, series interface, control logic and Analog-Digital Converter (ADC). With the use of smart layout design, fill factor of pixel cell is 43%. Moreover, a new method of Dynamic Digital Double Sample (DDDS) which removes Fixed Pattern Noise (FPN) is used.The CMOS image sensor chip is implemented based on the 0.35 μm process of chartered by Multi-Project Wafer (MPW). This chip performs well as expected.  相似文献
6.
The effect of post-oxidation N2 annealing and post-metallization forming-gas annealing on the electrical properties of Pt/Hf-silicate (3 nm)/Si0.8Ge0.2(100)/n-type Si(100) metal-oxide semiconductor (MOS) capacitors is reported. Capacitance-voltage (C-V) and current density-voltage (J-V) measurements of asgrown, 3-nm-thick, hafnium-silicate films containing ∼12at.%Hf indicate a large number of bulk and interface traps with a current density of ∼10−2 A/cm2 at VFB+1 V. Post-ultraviolet (UV)/O3 oxidation annealing in N2 at 350°C for 30 min leads to a significant improvement in the electrical characteristics of the film. A post-metallization anneal (PMA) at 450°C for 30 min in forming gas (90% N2:10% H2), however, degraded the electrical properties of the films. X-ray photoelectron spectroscopy (XPS) analyses of the forming-gas-annealed films indicate that a possible cause for the degradation in electrical properties is the hydrogen-induced reduction of GeO2 in the interfacial SixGe1−xO2 oxide layer to elemental germanium. Implications for the introduction of hafnium silicate as a viable gate dielectric for SiGe-based devices are discussed.  相似文献
7.
赵有  张俊荣  范存波 《电子学报》1999,27(11):111-113,110
经过1997年8月对中科院长春人造卫星观测站卫星激光测距系统的技术改造,使系统的观测精度和稳定性都有了很大的提高,主要是采用了量子效率高、能自动补偿,时间游动小、快响应的单光子光电雪崩二极管和一套便携式我测距校准系统,以及建立三个近地标准靶等。结果使测距内符匝原来的6cm左右,提高到现在的小于2cm(单次)和1cm左右(标准点数据),系统的长期稳定性由原来的4cm左右,提高到现在小于2cm,系统测  相似文献
8.
I. Introduction Complementary Metal Oxide Semiconductor (CMOS) image sensor has been becoming in-creasingly significant in the field of solid image sensor. Compared with Charge-Coupled Device (CCD) image sensor, CMOS image sensor possesses many advantages, such as smaller size, more con-venient to be integrated with other devices, lower power consumption and cost, etc[1,2]. To date, CMOS image sensor is adopted in almost all mo-biles which can take pictures. In addition, CMOS image …  相似文献
9.
The paper proposes a novel transceiver in physical layer for high-speed serial data link based upon Universal Serial Bus (USB) 2.0, comprising transmitter and receiver. In the design, transmitter contains pre-and-main driver to satisfy slew rate of output data, receiver includes optimized topology to improve precision of received data. The circuit simulation is based on Cadence's spectre software and Taiwan Semiconductor Manufacture Corporation's library of 0.25μm mixed-signal Complementary Metal-Oxide Semiconductor (CMOS) model. The front and post-simulation results reveal that the transceiver designed can transmit and receive high-speed data in 480Mbps, which is in agreement with USB2.0 specification. The chip of physical-layer transceiver has been designed and implemented with 0.25μm standard CMOS technology.  相似文献
10.
We have measured the effect of deposition parameters upon the utility of plasma enhanced chemical vapor depositon silicon nitride as a gallium diffusions barrier during molecular beam epitaxy growth of gallium arsenide on silicon submicron complementary metal oxide semiconductor electronics. It was found that the conditions under which the silicon nitride is deposited severely impact the ability of these films to be used as a diffusion barrier, with the most critical dependence upon the silane to nitrogen gas ratio.  相似文献
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