排序方式: 共有309条查询结果,搜索用时 15 毫秒
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ICP刻蚀GaP表面形貌控制 总被引:1,自引:0,他引:1
不同角度的GaP表面形貌刻蚀主要依赖于刻蚀参数的调节以及光刻胶的形貌,但要得到能够重复的光刻胶形貌是很困难的.研究了如何通过调节感应耦合等离子(ICP)刻蚀仪器本身的参数,而不依赖于不定的光刻胶形貌来得到可重复的表面形貌.通过研究可知,射频功率与腔室压强是影响表面形貌的最重要的两个参数.射频功率越小刻蚀得到的角度越大,腔室压强越大刻蚀得到的角度也越大.通常BCl3等离子体被用来作为GaP的刻蚀气体,但为了维持所需的等离子浓度以及更大的操作压强,Ar被加入刻蚀气体中. 相似文献
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在电动汽车仿真平台上,根据实际车型及技术现状合理地设置动力参数,搭建了外接充电式混合动力电动汽车(PHEV)整车模型,在此基础上,结合PHEV的特点,分析了PHEV的控制系统结构,提出了一种以提高燃油经济性为目标的全新的基于动态规划(DP)的PHEV全程能量控制策略。该策略突破了目前PHEV采用的电量消耗-电量保持模式的能量优化管理思路。为了最大限度地使用电池能量,以电池荷电状态(SOC)在路程起点处达到上限值,在终点达到安全下限值为限制条件,运用动态规划算法使得全程燃料经济性最高。仿真结果表明,与传统的能量管理策略相比,基于DP的全程能量管理可大大提高燃料经济性。 相似文献
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A kind of AlGaInP light emitting diode (LED) with surface anti-reflecting structure has been introduced to solve the problems of low light efficiency and restricted luminous intensity. The new structure can be demonstrated theoretically and experimentally, and LEDs with the new structure have higher on-axis luminous intensity and larger saturation current than conventional LEDs and LEDs with ITO film only, which is caused by higher external quantum efficiency and also higher internal quantum efficiency. The new LEDs are especially suitable for working at large injected currents. 相似文献
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对自制的GaN基大功率白光和蓝光LED及AlGaInP基的大功率红光和黄光LED进行了低温和高温下的光电特性测试,对不同材料的LED的正向电压、相对光强、波长、色温等参数随温度变化的关系进行了测试.实验结果表明,温度对功率型LED的光电特性有很大影响,随温度的降低,LED正向电压升高,峰值波长发生蓝移;高温条件下,LED发光功率降低,峰值波长发生红移. 相似文献
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In order to improve the light efficiency of the conventional GaN-based light-emitting diodes(LEDs), the indium tin oxide(ITO) film is introduced as the current spreading layer and the light anti-reflecting layer on the p-GaN surface.There is a big problem with the ITO thin film’s corrosion during the electrode preparation.In this paper,at least,the edge of the ITO film was lateral corroded 3.5μm width,i.e.6.43%—1/3 of ITO film’s area. An optimized simple process,i.e.inductively couple plasma(ICP),was introduced to solve this problem.The ICP process not only prevented the ITO film from lateral corrosion,but also improved the LED’s light intensity and device performance.The edge of the ITO film by ICP dry etching is steep,and the areas of ITO film are whole. Compared with the chip by wet etching,the areas of light emission increase by 6.43%at least and the chip’s lop values increase by 45.9%at most. 相似文献
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功率LED热特性分析 总被引:1,自引:0,他引:1
随着LED功率的升高,热应力对LED的影响越来越显著,过高的结温不但会使器件寿命急剧衰减,还会严重影响LED的峰值波长,光功率,光通量等诸多性能参数。因此精确掌握LED器件的温升规律便成为了提高设备工作可靠性和芯片结构设计的关键所在。本文通过标准电学法对不同颜色的1W功率LED及不同功率的GaN基白光LED的结温和热阻进行了测量,实验结果表明:同种结构LED的温度系数K虽然离散但比较接近,不同结构LED芯片K明显不同;在相同衬底材料,相同芯片结构条件下,LED芯片结温会随芯片功率的增大而升高。并首次进行了变电流下不同功率LED芯片的结温和热阻测量,发现无论功率大小,结温均随热电流的增大而上升,功率越大,上升幅度也越大。随着LED两端所加电流的增大,3W白光LED的热阻呈上升趋势,而1W白光LED的热阻随电流增加基本不变。 相似文献
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对GaAs/AlGaAs多量子阱红外探测器外延材料进行了光致荧光谱(PL)测量,结合理论计算,由材料吸收峰位置得到势垒高度以及势阱基态位置,并由此推算出相应的红外探测响应波长。推算结果与器件光电流实验值的对比表明,由光致荧光谱(PL)测量结果计算得到的响应波长与实际器件的响应波长有良好的一致性。 相似文献
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In conventional light-emitting diodes (LED’s), the external efficiency is limited by total internal reflection at the semiconductor-air interface. An LED with a textured top surface can increase the light-extraction efficiency. This paper reports a new method to fabricate AlGaInP-based nanorod light emitting diodes (LEDs) by using self-assemble metal layer nano-masks and inductively coupled plasma (ICP). Light power measurements indicates that the scattering of photons considerably enhance the probability of escaping from the nanorod LEDs. The light-intensity of the nanorod LED is increased by 34% for a thin GaP window layer, and by 17% for 8 μm GaP window layer. The light power of the nanorod LED is increased by 25% and 13%, respectively. 相似文献