毫米波三维异质异构集成技术的进展与应用

三维异质异构集成技术是实现电子信息系统向着微型化、高效能、高整合、低功耗及低成本方向发展的最重要方法,也是决定信息化平台中微电子和微纳系统领域未来发展的一项核心高技术。文章详细介绍了毫米波频段三维异质异构集成技术的优势、近年来的发展趋势以及面临的挑战。利用硅基MEMS 光敏复合薄膜多层布线工艺可实现异质芯片的低损耗互连,同时三维集成高性能封装滤波器、高辐射效率封装天线等无源元件,还能很好地处理布线间的电磁兼容和芯片间的屏蔽问题。最后介绍了一款新型毫米波三维异质异构集成雷达及其在远距离生命体征探测方面的应用。     

Compiler compatible 5.66 Mb/mm2 8T 1R1W register file in 14 nm FinFET technology

1-read/1-write (1R1W) register file (RF) is a popular memory configuration in modern feature rich SoCs requiring significant amount of embedded memory. A memory compiler is constructed using the 8T RF bitcell spanning a range of instances from 32 b to 72 Kb. An 8T low-leakage bitcell of 0.106 μm² is used in a 14 nm FinFET technology with a 70 nm contacted gate pitch for high-density (HD) two-port (TP) RF memory compiler which achieves 5.66 Mb/mm² array density for a 72 Kb array which is the highest reported density in 14 nm FinFET technology. The density improvement is achieved by using techniques such as leaf-cell optimization (eliminating transistors), better architectural planning, top level connectivity through leaf-cell abutment and minimizing the number of unique leaf-cells. These techniques are fully compatible with memory compiler usage over the required span. Leakage power is minimized by using power-switches without degrading the density mentioned above. Self-induced supply voltage collapse technique is applied for write and a four stack static keeper is used for read Vmin improvement. Fabricated test chips using 14 nm process have demonstrated 2.33 GHz performance at 1.1 V/25 °C operation. Overall V_min of 550 mV is achieved with this design at 25 °C. The inbuilt power-switch improves leakage power by 12x in simulation. Approximately 8% die area of a leading 14 nm SoC in commercialization is occupied by these compiled RF instances.     

一种轻小型四极杆质谱仪射频电源的研制

四极杆结构是四极杆质谱仪的核心结构，由射频电源分别施加两组高压高频信号进行驱动，利用电场的变化和输入离子的质荷比差异对离子进行筛选。针对四极杆质谱仪小型化的研制需求，以信号调制模块、放大模块、反馈电路和直流模块为基本构型，设计了一种应用于轻小型四极杆质谱仪的射频驱动电源。经实际测试，该电源可以在谐振频率1.33 MHz、扫描频率10 Hz的输入条件下，输出峰 峰值电压最高可达3.33 kV的调幅射频高压信号并驱动四极杆结构，扫描切换时间不高于1 ms。射频电源输出信号稳定、波动小、交直比的波动为0.1%。该射频电源相较于常规的四极杆射频电源具有更高的扫描范围，体积小巧，功耗仅30 W，接口简单，有较高的实用价值。     

40 years FORM: Some new aspects?

40 years ago Hasofer and Lind wrote their seminal paper [13] about FORM where they described an algorithm for finding the beta point. This algorithm, later in 1978 generalized by Rackwitz and Fiessler in [23] to include nonnormal random variables, is known as Hasofer-Lind–Rackwitz-Fiessler (HL–RF) algorithm and till now it is an important tool for reliability calculations. Here its relation with standard numerical optimization is explained. Further a simple method for computing the SORM factor is given and the connection of FORM/SORM with dimension reduction concepts is outlined.     

High sensitivity nanostructure incorporated interdigital silicon based capacitive accelerometer

Interdigital structures are realized on silicon substrates with high sensitivity to acceleration. The process employs a combination of anisotropic back-side micromachining with front-side vertical deep reactive ion etching of silicon. The incorporation of silicon-based nano-structures on the vertical planes of fingers leads to a significant increase in the capacitance of the device from 0.45 for simple planes to 40 pF for the nano-structured planes. Such structures show high sensitivity to inclination and accelerations, which could be due to field emission of electrons from nano-metric features. Around 8% change in the capacitance is observed upon a tilting sensor from 0° to 90° angle, which makes it proper for possible use as an earthquake sensor. A preliminary model for the capacitance and its dependence on the measurement voltage is presented.     

无人机天线在雷电效应中的响应研究及性能检测

机载天线安装在无人机表面,容易成为雷电附着点,对无人机的飞行安全会产生严重威胁。 为开展相关设计,并验证设 计的有效性,针对 UHF 机载天线为研究对象,设计了片段式导流条和端口射频雷电抑制器的防护方案。 先后进行了初始先导 附着试验、外部部件瞬态感应试验、电性能测试和系统评估计算。 试验结果表明,天线损伤程度降低,片段式导流条对天线的电 性能影响不超过 0. 3 dB,射频雷电抑制器不影响驻波比、增益。 最终链路余量满足大于 3 dB 的要求,证明了设计的有效性。     

多层圆片级堆叠THz硅微波导结构的制作

基于微电子机械系统(MEMS)工艺,提出一种多层圆片堆叠的THz硅微波导结构及其制作方法。为了验证该结构在制作THz无源器件中的优势,基于6层圆片堆叠的硅微波导结构,设计了一种中心频率365 GHz、带宽80 GHz的功率分配/合成结构,并对其进行了仿真。研究了制作该结构的工艺流程,攻克了工艺过程中的关键技术,包括硅深槽刻蚀技术和多层热压键合技术,并给出了工艺结果。最终实现了多层圆片堆叠功率分配/合成结构的工艺制作和测试。测试结果表明,尽管样品的插入损耗较仿真值增加3 dB左右,考虑到加工误差和夹具损耗等情况,样品主要技术指标与设计值较为一致。     

不同结构石墨烯发声器的热声效率

为了研究不同石墨烯发声器结构对热声效率的影响,建立了石墨烯发声器的声压解析模型,对单层石墨烯发声器、多层石墨烯发声器以及镍铬基的泡沫石墨烯发声器的发声效率进行了理论与实验研究。首先,介绍了石墨烯发声器的工作原理,建立了石墨烯发声器的周期性温度变化模型和声压解析模型。然后,实验研究了单层石墨烯发声器、多层石墨烯发声器以及镍铬基的泡沫石墨烯发声器的热声效率。实验结果表明在14~25 kHz内,施加6 V交流电,测距为6 cm的条件下,单层、多层和泡沫石墨烯发声器的最高SPL分别为35.19,20.36和33.42 dB,SPL理论值最高约为37.45 dB。具有较低电阻,较低比热容,较高导热率的石墨烯发声器可以获得较高的热声效率和声压。