Chemical mechanical polishing of polymer films

Strategies to reduce capacitance effects associated with shrinking integrated circuit (IC) design rules include incorporating low resistivity metals and insulators with low dielectric values, or “low-κ” materials. Using such materials in current IC fabrication schemes necessitates the development of reliable chemical mechanical polishing (CMP) processes and process consumables tailored for them. Here we present results of CMP experiments performed on FLARE™ 2.0 using a specialized zirconium oxide (ZrO₂) polishing slurry. FLARE™ 2.0 is a poly(arylene) ether from AlliedSignal, Inc. with a nominal dielectric constant of 2.8. In addition, we provide insight into possible removal mechanisms during the CMP of organic polymers by examining the performance of numerous abrasive slurries. Although specific to a limited number of polymers, the authors suggest that the information presented in this paper is relevant to the CMP performance of many polymer dielectric materials.     

不同加工工艺的锑化镓晶片损伤研究

用透射电子显微镜、扫描电镜对锑化镓材料切、磨、抛等加工工艺引入的表面损伤进行观察和检测。结果表明：切割加工是锑化镓单晶晶片表面损伤层引入的主要工序；锑化镓单晶切割片表面极不平整，有金刚砂所引起的较粗桔皮皱纹；其表面损伤层深度≤30μm；双面研磨的锑化镓晶片表面仍有较粗桔皮皱纹，但比切割片的要细，而且桔皮皱纹的深浅随磨砂（Al2O3)粒径的减小而变细变浅；晶片的表面损伤层深度（≤5μm）也随着磨砂粒径的减小而减小。一般情况下，其损伤层的深度约为磨砂粒径的1/2。机械化学抛光加工的锑化镓晶片表面的SEM像观察不到桔皮皱纹；其损伤层深度约55nm。     

皮革去污上光用乳化蜡的研制

采用石蜡、微晶蜡为主要原料 ,经实验选出了以水为稀释剂的乳化型皮革去污上光蜡。实验优化的配方为石蜡 12 .5 g ,微晶蜡 8.0 g ,硬脂酸 8.5g ,三乙醇胺 5 .5 g ,水量 70 (涂用 )或 130 g(喷用 )。反应条件为乳化时间 4 0min ,搅拌速度 5 0 0～ 70 0r/min ,乳化温度 90℃。制得上光剂产品的去污性能可与用去污剂单独处理的效果相当 ,亮度可达 6 6 .7。     

抛光液温控装置结构设计及温度场分析

为精确控制超光滑表面抛光过程中抛光液的温度,根据温控基本原理设计温控装置结构.将用UG建立的温控装置模型导入GAMBIT中进行温度场分析.针对装置内部温度分布不均匀问题,对其结构进行优化：在装置内加入导热隔板将其分为工作区和调温区,制冷器被置于调温区内;将温控装置的外形结构加入过渡圆角.结果表明：优化后的温控装置形成内外环流,工作区温度波动范围为±0.01℃,温度分布均匀对称,满足高精度温控的恒温和匀温要求.     

矿山磨光球用钢XK5159H的生产试制

XK5159H钢连铸连轧棒材用于制造矿山磨光球，对于钢的纯净度、低倍组织、探伤结果及DI值等均有严格的要求，很难控制。我们通过制定内控化学成分及合理的工艺路线，使生产试制一次成功。     

脱酮肟型有机硅建筑密封胶的研制

本文介绍了脱酮肟型有机硅建筑密封胶的配制原理、工艺、产品性能及其影响因素     

内陆核电厂放射性废液中硼酸的反渗透分离实验研究

建设内陆核电是我国经济社会发展的必然需求,但由于内陆核电自然环境和社会环境的特殊性,必须更进一步考虑排放对环境和公众的安全影响,对放射性废液进行深化处理,在解控排放的基础上进一步降低排放水平。本文在内陆AP1000机组已实施的放射性废液处理系统改进的基础上,开展了放射性废液深化处理研究,通过大量实验考察了不同进水pH值、硼浓度、含盐量、水温等水质条件和不同工作压力、回收率等运行条件下反渗透装置对硼酸的去除性能和对模拟放射性核素的截留能力。结果表明,通过控制适当的工艺条件,可以去除废液中80%以上的硼酸,同时保持很好的核素去除效果,达到进一步降低排放水平的目的。研究成果可为内陆核电厂放射性废液处理系统深化处理工程应用提供有力的技术支撑,并为后续内陆核电放射性废液深化处理提供参考。     

表面处理对氮化硅陶瓷力学性能的影响

采用X射线衍射应力分析的sin2ψ法计算了Si3N4陶瓷试样的残余应力，并分别测量了表面处理前后Si3N4试样的力学性能。结果表明，经平面磨削后的Si3N4试样表面残余应力为拉应力，而抛光处理可适当降低残余应力。两种方法都使试样抗弯强度降低。     

EFFECTS OF NONIONIC SURFACTANTS ON PERFORMANCE OF COPPER CHEMICAL MECHANICAL POLISHING

During copper chemical mechanical polishing (Cu-CMP), the physical properties of slurry, such as the dispersion and suspension stability of abrasives, the interaction between particles and the polished surface, and the rheological characteristics, greatly affect the planarization efficiency. In this study, several nonionic surfactants were added to change the aforementioned physical characteristics of slurry and Cu-CMP performance. Their effects were investigated. The experimental results showed that Al₂O₃ slurry with 300 ppm Triton DF-16 could enhance the wettability of the Cu surface and stabilize the dispersion of abrasives in the slurry. Therefore, the passivation reaction on the Cu surface during CMP would occur uniformly, and the removal of particles during post cleaning could be improved. Cu CMP using the slurry with an adequate amount of nonionic surfactants, Triton DF-16, is proposed to reduce the surface roughness, enhancing the planarity.     

新型不锈钢化学抛光剂工艺研究

叙述了一般不锈钢化学抛光溶液的基本类型和在实际应用中存在的问题。着重论述MW－6不锈钢化学抛光剂的工艺研究过程、工艺条件、质量指标及检测方法，同时介绍了它与传统不锈钢化学抛光剂的比较，经验价值，表面质量控制，应用领域及应用前景。