划片刀配方对砷化镓晶圆切割崩裂的影响

利用试验设计方法(design of experiment, DOE)，以不同配方的划片刀划切砷化镓晶圆，并检测其正、背、侧面的崩裂尺寸，找出划片刀配方对砷化镓晶圆切割崩裂尺寸的影响规律。研究表明:划片刀的磨料粒度与砷化镓晶圆切割质量密切相关，即磨料粒度越细，正、背、侧面崩裂尺寸越小；而磨料浓度和结合剂强度与砷化镓晶圆正、背、侧面的切割质量相关性并不显著。可通过缩小磨粒尺寸的方式提高划切质量，并视情况调整磨料浓度和结合剂强度。      

Adhesion Performance and UV-Curing Behaviors of Interpenetrated Structured Pressure Sensitive Adhesives with 3-MPTS for Si-Wafer Dicing Process

Abstract

As Si-wafers, as used in the electronic industry, become thinner and thinner, it is important to investigate the conditions which are suitable for easily peelable acrylic dicing tapes. In the ‘pick-up’ process, the adhesion strength decreased after UV irradiation as a result of polymer network formation. In this study, interpenetrating polymer network (IPN) structured acrylic pressure sensitive adhesives (PSAs) were investigated with two different types of UV irradiation — a steady UV irradiation and a pulsed UV irradiation of 100 mJ/cm². The PSAs binder contained 2-ethylhexyl acrylate (2-EHA), acrylic acid (AA) and 3-methacryloxypropyl trimethoxysilane (3-MPTS). The hexafunctional monomer, dipentaerythritol hexacrylate (DPHA) and 3-methacryloxypropyl trimethoxysilane (3-MPTS) were used as diluent monomers. The adhesion performance as related to the peel strength and the tack properties on the Si-wafer substrates, was examined with increasing UV dose. The effect of UV-curing on the behavior and viscoelastic properties of the ‘pick-up’ acrylic tapes was investigated using Fourier transform infrared — attenuated total reflectance spectroscopy (FTIR–ATR) and an advanced rheometric expansion system (ARES). It is also necessary to consider the contaminants on the Si-wafer substrates left behind after releasing the dicing tapes, because of possible damage to the Si-wafers and subsequent processes. Field emission scanning electron microscopy (FE-SEM) and X-ray photoelectron spectroscopy (XPS) analysis revealed little residue on the Si-wafer after removing the tapes and after more than the specific level of UV dose.     

自动多刀切割机的研制

介绍了西安捷盛近年来研制的自动多刀切割设备的技术指标及在设计中所考虑的几个关键技术,便于使用者参考和借鉴。     

红外焦平面组件封装中的皮秒激光划片工艺(上)

在对皮秒激光划片加工所涉及的基本原理和设备进行简单介绍的基础上,对红外焦平面组件封装中常涉及的一些材料的特点及其与皮秒激光束的作用机理进行了梳理。通过优化激光参数设置提高了划片效率并保证了划片质量;通过改进工夹具避免了金属层损伤且改善了操作方便性。     

MEMS划片技术的现状与技术革新

MEMS独特的结构和特性,给划片工艺带来了巨大的挑战.介绍了传统砂轮划片技术在MEMS芯片生产中的局限性,指出了隐形激光划片技术的优越性,综述了激光划片技术在MEMS划片中的应用,对几种较成熟的先进激光划片技术进行了比较,对各自的工作原理、特点、工序作了重点阐述,并对MEMS划片技术的发展前景作了展望.     

果蔬三维切丁机改进仿真模型及试验

针对已有果蔬三维切丁断面易出现大弧形、倾斜等问题,采用虚拟样机技术,建立切丁机三维模型,并将其导入机械系统动力学分析软件ADAMS中,仿真分析推进滚筒与横切刀转速比在0.11~0.22、推进滚筒中心与横切刀中心水平间距在260~305 mm时切得的不同丁断面形状。仿真结果表明,引起切丁断面倾斜的主要因素是推进滚筒转速和横切刀转速的不匹配,当推进滚筒与横切刀之间的中心水平间距为280~300 mm、转速比n_1/n_2为0.11~0.22时,可取得较理想的切丁断面,其断面形状比较平直。为验证所得结论,在推进滚筒中心与横切刀中心水平间距290 mm、转速比为0.17条件下,分别进行10,15,20 mm 3种规格的切削性能试验,试验结果表明切出的3种规格丁断面形状规整,断面偏差小,其断面相对偏差百分数最大为12.7%,达到了国外同类先进产品质量标准。     

自动切割机桥形工作台的误差分析

以自动切割机桥形工作台为研究对象,针对其高精度要求,通过对其结构的具体分析,系统并详尽地对三轴桥形工作台的各种误差源进行了分析计算;通过高斯公式计算出各驱动轴定位精度误差;介绍了桥形工作台定位精度的测量方法,对理论结果与实测结果进行了分析比较,验证了误差分析结果的正确性,为高精度桥形工作台的设计提供参考。     

复合电沉积超薄金刚石切割片磨粒分布的均匀性

针对超薄金刚石切割片磨粒分布均匀性对加工质量影响很大且又不易评价的问题,提出了一种评价复合电沉积方法制造的超薄金刚石切割片中磨粒分布均匀性的方法,并结合0.01~0.05mm超薄金刚石切割片的研制,试验研究了复合电沉积工艺参数和搅拌方式对复合电沉积超薄金刚石切割片磨粒分布的影响规律。结果表明:在溶液金刚石浓度为15g/L,阴极电流密度为1A/dm2以及搅拌停歇时间比为1∶10的条件下,复合电沉积超薄金刚石切割片磨粒分布的均匀性能够得到有效改善。     

Mid-infrared ridge waveguide in MgO:LiNbO3 crystal produced by combination of swift O5+ ion irradiation and precise diamond blade dicing

We report on the fabrication of ridge waveguide operating at mid-infrared wavelength in MgO:LiNbO₃ crystal by using O⁵⁺ ion irradiation and precise diamond blade dicing. The waveguide shows good guiding properties at the wavelength of 4 μm along the TM polarization. Thermal annealing has been implemented to improve the waveguiding performances. The propagation loss of the ridge waveguide has been reduced to be 1.0 dB/cm at 4 μm after annealing at 310 °C. The micro-Raman spectra indicate that the microstructure of the MgO:LiNbO₃ crystal has no significant change along the ion track after swift O⁵⁺ ion irradiation.     

Evaluation of crystallinity of GaN epitaxial layer after wafer dicing

The crystallinity of GaN epitaxial layers on sapphire substrates following laser dicing was evaluated by Raman spectroscopy. Dicing was carried out using either full laser ablation or laser scribing followed by breaking. The results indicated that in a region within about 40 μm from the edges of the diced chips, the Raman peaks were shifted to lower wavenumber than near the chip center. The shifted peaks were at positions intermediate between those for the GaN epitaxial layer before dicing and those for a bulk GaN crystal. These results indicate that stress relaxation occurred near the edges of the diced chips.