Improving narrow bandgap a-SiGe:H alloys grown by hot-wire chemical vapor deposition

We have improved the electronic properties of narrow-bandgap (Tauc gap below 1.5 eV) amorphous-silicon germanium alloys (a-SiGe:H) grown by hot-wire chemical vapor deposition (HWCVD) by lowering the substrate temperature and deposition rate. Prior to this work, we were unable to grow a-SiGe:H alloys with bandgaps below 1.5 eV that had photo-to-dark conductivity ratios comparable with our plasma-enhanced CVD (PECVD) grown materials [B.P. Nelson et al., Mater. Res. Soc. Symp. 507 (1998) 447]. Decreasing the filament diameter from our standard configuration of 0.5 mm to 0.38 or 0.25 mm provides first big improvements in the photoresponse of these alloys. Lowering the substrate temperature from our previous optimal temperatures (T_sub starting at 435 °C) to at 250 °C provides additional photo-to-dark conductivity ratio increasing by two orders of magnitude for growth conditions containing 20–30% GeH₄ in the gas phase (relative to the total GeH₄+SiH₄ flow).     

Formation of titanium and cobalt germanides on Si (100) using rapid thermal processing

Titanium and cobalt germanides have been formed on Si (100) substrates using rapid thermal processing. Germanium was deposited by rapid thermal chemical vapor deposition prior to metal evaporation. Solid phase reactions were then performed using rapid thermal annealing in either Ar or N₂ ambients. Germanide formation has been found to occur in a manner similar to the formation of corresponding silicides. The sheet resistance was found to be dependent on annealing ambient (Ar or N₂) for titanium germanide formation, but not for cobalt germanide formation. The resistivities of titanium and cobalt germanides were found to be 20 μΩ-cm and 35.3μΩ-cm, corresponding to TiGe₂ and Co₂Ge, respectively. During solid phase reactions of Ti with Ge, we have found that the Ti₆Ge₅ phase forms prior to TiGe₂. The TiGe₂ phase was found to form approximately at 800° C. Cobalt germanide formation was found to occur at relatively low temperatures (425° C); however, the stability of the material is poor at elevated temperatures.     

高纯锗探测器的快定时性能及其应用

为了将高纯锗（ＨＰＧｅ）探测器用于快定时的物理实验中，本实验研究厂影响高纯锗探测器定时谱仪时间性能的各种因素，找出了获得谱仪最小时间分辨的各种最佳参数。并建立了分辨时间为４．１９ｎｓ，能量分辨率为２０ｋｅＶ，微分非线性好于±２．０％，计效率可承受１２０×１０￣３ｓ￣（－１）的时间微分扰动角关联谱仪。利用此谱仪，以￣（２０４）Ｂｉ为探针核，研究了Ｂｉ系高温超导的微观机理，取得了较好的结果。     

Growth of Ga x In1−x As y P1−y using ethyldimethylindium andt-butylphophine

The growth of GaInAsP lattice matched to GaAs using tertiary-butylphosphine and ethyldimethylindium to replace the more conventional phosphine and trimethylindium is described. The quaternary compound lattice matched to GaAs has received far less attention than related compositions that lattice match InP. Using the new sources, most of the growth problems experienced by previous workers have been avoided. Uniform compositions have been grown reproducibly without evidence of gas-phase, adduct-forming reactions. Bothn- andp-type films have been grown. Heteroepitaxy of high quality GalnAsP layers on Ge has also been achieved, and microstructural results are presented.     

稀散金属镓锗在选冶回收过程中的富集行为分析

凡口铅锌矿稀散金属镓锗主要是以类质同像形式存在于闪锌矿中，如何有效地综合回收镓锗是凡口矿建矿以来研究的主要课题之一。针对凡口矿综合回收稀散金属镓锗的历史、现状与进展，重点研究了镓锗在选矿回收和湿法冶炼过程中的富集行为及走向，为开发镓锗综合回收新技术提供理论指导，从而提高企业经济效益。     

Influence of zero-loss filtering on electron optical phase contrast

Complex scattering amplitudes are used to calculate the phase contrast of colloidal gold particles. Comparison of measurements of the phase contrast intensity at the centre of the gold particle as a function of defocus for unfiltered and zero-loss filtered images demonstrates the increase in phase contrast achieved by zero-loss filtering even for a thick carbon substrate film. The granulation of amorphous germanium films is measured by the spatial rms (root mean square) values of image intensity in a defocus series.     

SiGe: An attractive material for post-CMOS processing of MEMS

This work gives an overview of the different developments for silicon germanium (Si_1−xGe_x) from a MEMS post-processing perspective. First, the maximum processing temperature that does not introduce any damage or degradation into the standard characteristics of the CMOS driving electronics is specified. Then, the optimal type of silicon and germanium gas sources and deposition technique that results in an economical process are identified. Next, the selection criteria for a low thermal budget doping method and doping species are discussed. Finally, the advantage and disadvantage for the different approaches implemented for enhancing the physical properties of poly Si_1−xGe_x at a CMOS backend compatible temperature are highlighted. It is shown that the optimal method depends on the application requirements and the CMOS technology used for realizing the driving electronics.     

Lewis酸存在下的自由基共聚合——Ⅰ.GeCl_4与BCl_3存在下的乙酸乙烯酯与丙烯酸交替共聚

乙酸乙烯酯(VAc)与丙烯酸(AA)在GeCl_4及BCl_3存在下通过自由基聚合可得到交替共聚物。对GeCl_4体系,聚合反应速率正比于[引发剂]~(0.5)。当VAc/AA=1:1(mol比)时有最大反应速率。CCl_4对本聚合反应无链转移作用。通过紫外光谱分析可证实VAc及AA均与GeC\(?)生成络合物;ESR分析表明,络合AA自由基较未络合AA有较强的阳离子特性,交替共聚的原因可能与络合AA自由基及活化单体络合物二者有关。     

HEDP与Ge(IV)固体配合物的研究

在常规条件下合成了1-羟基乙叉-1,1-二膦酸(简称HEDP)与Ge(IV)的固体配合物。用元素分析和热分析确定了配合物的组成为:Ge2(OH)4L·3H2O(Ⅰ),L=CH3C(OH)(PO3)2。用红外光谱和热分析对配合物的结构及热稳定性作了较系统的研究。     

胶体模板法制备三维锗光子晶体

采用胶体模板法并通过简单可控的化学填充工艺制备了三维锗光子晶体；以单分散二氧化硅小球的蛋白石结构为模板，由氯化亚锗与丙烯酸化合制备得到3-三氯锗丙酸（Cl3GeCH2CH2COOH）白色粉末，以三氯锗丙酸的乙醇溶液作为锗源先驱体，低温水解得到β-羧乙基锗倍半氧化物，在600～660℃经H2还原后形成锗，由2％HF化学浸蚀消除模板．对终产物进行X射线衍射分析。结果表明：产物为多晶锗。通过扫描电子显微镜对终产物的形貌进行观察的结果表明：包裹有空气的锗壳球有序阵列已经形成。将先驱体浓度为0．6mol／L的溶液填入模板空隙后。壳层表面可以获得较为光滑致密的锗壳。