Low threshold voltage,highly stable electroforming-free threshold switching characteristics in VOx films-based device

Threshold switching (TS) devices have evolved as one of the most promising elements in memory circuit due to their important significance in suppressing crosstalk current in the crisscross array structure. However, the issue of high threshold voltage (V_th) and low stability still restricts their potential applications. Herein, the vanadium oxide (VO_x) films deposited by the pulsed laser deposition (PLD) method are adopted as the switching layer to construct the TS devices. The TS devices with Pt/VO_x/Pt/PI structure exhibit non-polar, electroforming-free, and volatile TS characteristics with an ultralow V_th (+0.48 V/−0.48 V). Besides that, the TS devices also demonstrates high stability, without obviously performance degradations after 350 cycles of endurance measurements. Additionally, the transition mechanism is mainly attributed to the synergistic effect of metal-insulator transition of VO₂ and oxygen vacancies. Furthermore, the nonvolatile bipolar resistance switching behaviors can be obtained by changing oxygen pressure during the deposition process for switching films. This work demonstrates that vanadium oxide film is a good candidate as switching layer for applications in the TS devices and opens an avenue for future electronics.     

Piezoelectric properties and microstructure of ceramicrete-based piezoelectric composites

Inorganic piezoelectric ceramic composite is the potential sensing element for long-term structural health monitoring due to its excellent durability and compatibility. In this study, a Ceramicrete-based piezoelectric composite is proposed preliminarily, in which the magnesium potassium phosphate cement is used as the matrix and the lead zirconate titanate particle is utilized as the functional phase. Piezoelectric properties test and microstructure analysis are performed to evaluate the testing samples. Results show that the piezoelectric performance of the composite increase with the increase of piezoelectric ceramic particle size. The value of the piezoelectric strain factor (d₃₃) can reach 83.8 pC/N, while the corresponding piezoelectric voltage factor (g₃₃) is 50.1 × 10^-3 V•m/N at the 50th day after polarization. Microstructure analysis illustrates that the interfacial transition zone (ITZ) between the matrix and the particles is dense. Moreover, the influence of aging on the composite is attributed to the continuous hydration after polarization. It indicates that the composites have a higher piezoelectric performance, which can be regarded as a promising sensing element material.     

The influence of iodide on glass transition temperature of high-pressure nuclear waste glasses

The glass transition temperature (T_g) is a key parameter to investigate for application in nuclear waste immobilization in borosilicate glasses. T_g for several glasses containing iodine (I) has been measured in order to determine the I effect on T_g. Two series of glass composition (ISG and NH) containing up to 2.5 mol% I and synthesized under high pressure (0.5 to 1.5 GPa) have been investigated using differential scanning calorimetry (DSC). The I local environment in glasses has been determined using X-ray photoelectron spectroscopy and revealed that I is dissolved under its iodide form (I⁻). Results show that T_g is decreased with the I addition in the glass in agreement with previous results. We also observed that this T_g decrease is a strong function of glass composition. For NH, 2.5 mol% I induces a decrease of 24°C in T_g, whereas for ISG, 1.2 mol% decreases the T_g by 64°C. We interpret this difference as the result of the I dissolution mechanism and its effect on the polymerization of the boron network. The I dissolution in ISG is accompanied by a depolymerization of the boron network, whereas it is the opposite in NH. Although ISG corresponds to a standardized glass, for the particular case of I immobilization it appears less adequate than NH considering that the decrease in T_g for NH is small in comparison to ISG.     

Enhanced strains of Nb-doped BNKT-4ST piezoelectric ceramics via phase boundary and domain design

A strategy that constructs the morphotropic phase boundary and manipulates the domain structure has been used to design the component of 0.96[Bi_0.5(Na_0.84K_0.16)_0.5Ti_(1-x)Nb_xO₃]-0.04SrTiO₃ (BNKT-4ST-100xNb) to enhance the strain properties for actuator application. Non-equivalent Nb⁵⁺ donor doping modulates the phase transition from the mixture of rhombohedral and tetragonal phases to the pseudocubic phase and results in the coexistence of multiple phases. Moreover, the high-resolution TEM confirms the existence of polar nano regions that contribute to the macroscopic relaxor behaviour. The size of the domains is reduced with increasing Nb⁵⁺, resulting in an enhanced relaxor behaviour. The ferroelectric-relaxor transition temperature decreases from 85 to below 30 °C, implying a non-ergodic to ergodic relaxor transition. An improved strain of 0.56% and a giant normalized strain of 1120 pm/V were achieved for BNKT-4ST-1.5Nb, which were attributed to the unique domain structure in which nanodomains are embedded in an undistorted cubic matrix. Ferroelectric, antiferroelectric, and relaxor phases coexist. As the electric field is large enough, a reversible phase transition occurs. Furthermore, good temperature stability was obtained due to the stability of the nanodomains, and no degradation in strains was observed even after 10⁴ cycles, which may originate from the reversible phase transition and dynamic domain wall. The results show that this design strategy offers a reference way to improve the strain behaviour and that BNKT-4ST-100xNb ceramics could be a potential material for high-displacement actuator applications.     

Waveguide external cavity narrow linewidth semiconductor lasers

Narrow linewidth light source is a prerequisite for high-performance coherent optical communication and sensing.Waveguide-based external cavity narrow linewidth semiconductor lasers(WEC-NLSLs)have become a competitive and attractive candidate for many coherent applications due to their small size,volume,low energy consumption,low cost and the ability to integrate with other optical components.In this paper,we present an overview of WEC-NLSLs from their required technologies to the state-of-the-art progress.Moreover,we highlight the common problems occurring to current WEC-NLSLs and show the possible approaches to resolving the issues.Finally,we present the possible development directions for the next phase and hope this review will be beneficial to the advancements of WEC-NLSLs.     

温度对核电站传热管阵列声透射特性的影响

为了研究温度分布对于管阵列结构中的声透射特性的影响，以核电站的实际工况为背景，构建了不同的温度场以及周期性变化的非均匀温度场，利用有限元方法进行数值模拟。结果表明：（1）温度分布会改变管阵列声透射频谱的“禁带”宽度以及中心频率位置。在同一介质中，温度变化对频率较高位置的影响大于频率较低的位置。（2）在同样为10℃的温度差下，当水的平均声速为1 653 m·s^-1、饱和水蒸气的平均声速为522.5 m·s^-1时，介质为水时的禁带宽度及中心频率位置变化较大，即声速大的介质的频谱对于温度的变化更敏感。（3）当温度差在10℃以内，在周期性变化的非均匀温度场和与均匀温度场中管阵列声透射特性在第一中心频率23 996.1 Hz之前，两频谱差别很小，在第一禁带之后会出现明显区别。该研究成果对完善核电站应用的声学检测提供了理论基础。     

Rheological and viscoelastic properties of colloidal solutions based on gelatins and chitosan as affected by pH

The objective of this study was to evaluate the influence of pH on rheological and viscoelastic properties of solutions based on blends of type A (GeA) or type B (GeB) gelatin and chitosan (CH). Solutions of GeA, GeB, CH, GeA:CH, and GeB:CH were prepared in several pH (3.5–6.0) and analyzed for determination of zeta-potential. Rheological analyses (stationary and dynamic essays) were carried out with blends allowing to study the effect of pH on shear stress, apparent viscosity, loss (G”) and storage (G’) moduli, and angle phase (Tanδ). Zeta potential of all biopolymers decreased linearly as a function of pH. CH presented higher values, and GeB, the lowest one, being the only having negative values at pH > 5. Overall, the pH influenced the rheological and viscoelastic properties of the colloidal solutions: shear stress and apparent viscosity increased as a function of pH. Other assays were carried out at 3% and 5% strain, for GeA:CH and GeB:CH, respectively. In the sol domain, G’ and G” (1 Hz) increased linearly for GeA:CH. But for GeB:CH, they increased in two linear different regions: one function between pH 3.5 and 5.0 and another one between 5.0 and 6.0, being a more important effect was visible in this last domain probably due to the negative net charge of gelatin, above it pI. An effect in two domains was also visible for Tanδ, explained in the same manner as previously. The GeB:CH blends behaved like diluted solutions, and transition temperatures increased as a function of pH.     

Flash Lamps as Ignition and Initiation Sources of the VS-2 Pyrotechnic Composition

In the present work it is found that the pyrotechnic composition VS-2 can be initiated with flash lamps IFC-500 and EVIS. VS-2 pyrotechnic composition contains 90% of mercury（Ⅱ） 5-hydrazinotetrazolate perchlorate and 10% of optically transparent copolymer of 2-methyl-5-vinyltetrazole and methacrylic acid （PVMT）. We have found that the flash lamps make it possible to initiate combustion of VS-2 composition with its transition to detonation both in cylindrical charges placed in brass caps of 5 mm diameter and 2 mm high， and film charges with 10 mm×80 mm in size and surface weights of 60 mg·cm^-2 and 90 mg·cm^-2， showing ignition delay times 10 μs and 3 μs， respectively. We also measured detonation velocities for VS-2 composition film charges， which were 4375-4505 m·s^-1 （of the charge being surface mass 60 mg·cm^-2） and 4221-4281 m·s^-1 （of the charge being surface mass 90 mg·cm^-2） and their blasting action on the aluminum plate. The depths of the normal shock wave imprints at the charge-barrier interface were 0.6-0.7 mm （for surface mass of the film charges 60 mg·cm^-2） and 1.2-1.3 mm （for surface mass of the film charges 90 mg·cm^-2）.     

Magnetic properties,phase evolution,hollow structure and biomedical application of hematite (α-Fe2O3) and QUAIPH

We investigate synthesis, phase evolution, hollow and porous structure and magnetic properties of quasi-amorphous intermediate phase (QUAIPH) and hematite (α-Fe₂O₃) nanostructure synthesized by annealing of akaganeite (β-FeOOH) nanorods. It is found that the annealing temperature determines the phase composition of the products, the crystal structure/size dictates the magnetic properties whereas the final nanorod morphology is determined by the starting material. Annealing of β-FeOOH at ～300 °C resulted in the formation of hollow QUAIPH nanorods. The synthesized material shows low-cytotoxicity, superparamagnetism and good transverse relaxivity, which is rarely reported for QUAIPH. The QUAIPH nanorods started to transform to porous hematite nanostructures at ～350 °C and phase transformation was completed at 600 °C. During the annealing, the crystal structure changed from monoclinic (akaganeite) to quasi-amorphous and rhombohedral (hematite). Unusually, the crystallite size first decreased (akaganeite → QUAIPH) and then increased (QUAIPH → hematite) during annealing whereas the nanorods retained particle shape. The magnetic properties of the samples changed from antiferromagnetic (akaganeite) to superparamagnetic with blocking temperature T_B = 84 K (QUAIPH) and finally to weak-ferromagnetic with the Morin transition at T_M = 244 K and high coercivity H_C = 1652 Oe (hematite). The low-cytotoxicity and MRI relaxivity (r₂ = 5.80 mM^?1 s^?1 (akaganeite), r₂ = 4.31 mM^?1 s^?1 (QUAIPH) and r₂ = 5.17 mM^?1 s^?1 (hematite)) reveal potential for biomedical applications.     

Feasibility of high performance in p-type Ge1−xBixTe materials for thermoelectric modules

GeTe is a promising candidate for the fabrication of high-temperature segments for p-type thermoelectric (TE) legs. The main restriction for the widespread use of this material in TE devices is high carrier concentration (up to ∼ 10²¹ cm⁻³), which causes the low Seebeck coefficient and high electronic component of thermal conductivity. In this work, the band structure diagram and phase equilibria data have been effectively used to attune the carrier concentration and to obtain the high TE performance. The Ge_1−xBi_xTe (x = 0.04) material prepared by the Spark plasma sintering (SPS) technique demonstrates a high power factor accompanied by moderate thermal conductivity. As a result, a significantly higher dimensionless TE figure of merit ZT = 2.0 has been obtained at ∼ 800 K. Moreover, we are the first to propose that application of the developed Ge_1−xBi_xTe (x = 0.04) material in the TE unicouple should be accompanied by SnTe and CoGe₂ transition layers. Only such a unique solution for the TE unicouple makes it possible to prevent the negative effects of high contact resistance and chemical diffusion between the segments at high temperatures.