Microscale Patterning of Mesoscopic PZN-PT Single Crystal Films by Crystal ion Slicing and Laser-Induced Etching

Advances in the fabrication of solid-solution single crystal relaxor ferroelectrics have made it possible to produce highly efficient piezoelectric crystals, and have attracted renewed interest in the use of these crystals for a new generation of piezoelectric transducers, actuators and sensors. Of particular interest is their incorporation into micro-electromechanical systems (MEMS). In this paper we report on the laser-induced wet chemical etching of lead zinc niobate-lead titanate (PZN-PT) in hydrochloric acid (HCl). Argon-ion laser radiation at power levels up to 4 W is focused to a spot diameter of about 15μm and results in the chemical etching of grooves at patterning speeds up to 5μm/sec. Crystal ion slicing, an ion-implant-based film separation technique, is used in combination with laser etching to form 5 to 10μm-thick patterned and freestanding films for incorporation into micro-electromechanical devices.     

A concise process technology for 3-D suspended radio frequency micro-inductors on silicon substrate

In this letter, a concise process technology is proposed for the first time to enable the fabrication of good quality three-dimensional (3-D) suspended radio frequency (RF) micro-inductors on bulk silicon, without utilizing the lithography process on sidewall and trench-bottom patterning. Samples were fabricated to demonstrate the applicability of the proposed process technology.     

Direct adaptive control of nonminimum phase systems using integralaction

A direct adaptive control scheme is proposed for nonminimum-phase systems in which controller parameters are estimated from the recursive least-squares algorithm and additional auxiliary parameters are obtained from the proposed polynomial identity. A local convergence is guaranteed without any extra condition. Integral action is incorporated into the adaptive controller to eliminate the steady-state error and to satisfy a condition of the unique solution for the polynomial identity. The control law used in this scheme is based on the set-point-on-I-only proportional-integral-derivative (PID) structure     

Parallel, self-organizing, hierarchical neural networks. II

For pt.I see IEEE Trans. Neural Networks, vol.1, p.167-78 (1990). Parallel, self-organizing, hierarchical neural networks (PSHNNs) involve a number of stages with error detection at the end of each stage, i.e., rejection of error-causing vectors, which are then fed into the next stage after a nonlinear transformation. The stages operate in parallel during testing. Statistical properties and the mechanisms of vector rejection of the PSHNN are discussed in comparison to the maximum likelihood method and the backpropagation network. The PSHNN is highly fault tolerant and robust against errors in the weight values due to the adjustment of the error detection bounds to compensate errors in the weight values. These properties are exploited to develop architectures for programmable implementations in which the programmable parts are reduced to on-off or bipolar switching operations for bulk computations and attenuators for pointwise operations     

A time-domain approach to transmission network equivalents viaProny analysis for electromagnetic transients analysis

This paper presents a method of obtaining transmission network equivalents from the network's response to a pulse excitation signal. The proposed method is based on modal decomposition representation for the large-scale interconnected system. In this framework we use Prony analysis to identify the network function of the system and to decompose the large system into a parallel combination of simple first-order systems. As a result the network function of the transmission network can be identified easily, and a Thevenin-type of discrete-time filter model can be generated. It can reproduce the driving-point impedance characteristic of the network. Furthermore, the proposed model can be implemented into the EMTP in a direct manner. The simulation results with the full system representation and the developed equivalent system showed a good agreement     

Strain analysis of moving objects using a Fourier transform grid method

There is no good method to measure the shape and the strain distributions of a structure changing with time. We have previously proposed the Fourier transform grid method (FTGM) to measure the three-dimensional shape and surface strain distributions of stationary objects by analysing the two-dimensional grating images recorded with two cameras. In the stereoscopic method, it is very important to determine the accurate geometric parameters of the camera system. In this paper, the positions and the directions of cameras are accurately determined using the FTGM applied to images of a reference object on which a two-dimensional grating is drawn. Applications for analysing shape and strain distributions of vibrating rubber plates and a moving human skin are shown.     

Stress distribution on [100] Si wafer mapped by novel I-V analysis of MOS tunneling diodes

The current-voltage (I-V) characteristics of metal-oxide-semiconductor tunneling diodes distributed over a 3-in Si wafer were analyzed to investigate the stress distribution on the wafer. Generally, the substrate injection saturation current (J/sub sat/) decreases as the gate injection leakage current (J/sub g/) increases, the latter being dominated by oxide thickness via a trap related mechanism. A universal curve to fit all analyzed data was found and it is suggested that devices with extremely high (low) J/sub sat/ at a given J/sub g/ should be located in areas of the silicon lattice with relatively high external compressive (tensile) stress because of the stress-induced bandgap variation effect. The mapped locations of the highly stressed devices on a 3-in [100] Si wafer correspond to the patterns of slips caused by thermal stress during rapid thermal processing, as described in previous reports.     

Temperature dependence of hydrogenated amorphous silicon thin-film transistors

The temperature dependence characteristics of hydrogenated amorphous silicon thin-film transistors were investigated. The results indicate that as the temperature was increased, the threshold voltage and the field-effect mobility were first increased, and then decreased, which may be controlled by different mechanisms at low and high temperatures. In addition, if the temperature was higher than 420 K, the Fermi level was promoted to the degenerate-like states, the current channel always existed due to the temperature effect, and the threshold voltage became negative.     

Purification and renaturation of recombinant human lymphotoxin (tumour necrosis factor beta) expressed in Escherichia coli as inclusion bodies

High level expression of recombinant human tumour necrosis factor β (rh TNF-β) in Escherichia coli results in the formation of two portions of protein, namely soluble active protein and insoluble protein which is inactive and aggregates in the form of inclusion bodies (IBs). In this study, a procedure for purification and renaturation of rh TNF-β from inclusion bodies has been designed and verified experimentally with a product purity of more than 90% and a recovery of about 30%. The procedure includes washing of IBs with specific wash buffer (Triton X-100/EDTA/lysozyme/PMSF), their solubilization with 8 mol dm^?3 alkaline urea, purification with ion-exchange columns, refolding with renaturation buffer and finally concentration and desalination with an ultrafiltration membrane. The characteristics of the renatured protein were identical with those of purified protein from the soluble fraction as demonstrated by (1) SDS-PAGE, (2) cytotoxic activity on mouse L929 cells, (3) N-terminal amino acid sequence, and (4) gel filtration chromatography.     

Survey of nitrate and nitrite contents of vegetables grown in Korea.

A scientific basis for the evaluation of the risk to public health arising from excessive dietary intake of nitrate in Korea is provided. The nitrate () and nitrite () contents of various vegetables (Chinese cabbage, radish, lettuce, spinach, soybean sprouts, onion, pumpkin, green onion, cucumber, potato, carrot, garlic, green pepper, cabbage and Allium tuberosum Roth known as Crown daisy) are reported. Six hundred samples of 15 vegetables cultivated during different seasons were analysed for nitrate and nitrite by ion chromatography and ultraviolet spectrophotometry, respectively. No significant variance in nitrate levels was found for most vegetables cultivated during the summer and winter harvests. The mean nitrates level was higher in A. tuberosum Roth (5150 mg kg(-1)) and spinach (4259 mg kg(-1)), intermediate in radish (1878 mg kg(-1)) and Chinese cabbage (1740 mg kg(-1)), and lower in onion (23 mg kg(-1)), soybean sprouts (56 mg kg(-1)) and green pepper (76 mg kg(-1)) compared with those in other vegetables. The average nitrite contents in various vegetables were about 0.6 mg kg(-1), and the values were not significantly different among most vegetables. It was observed that nitrate contents in vegetables varied depending on the type of vegetables and were similar to those in vegetables grown in other countries. From the results of our studies and other information from foreign sources, it can be concluded that it is not necessary to establish limits of nitrates contents of vegetables cultivated in Korea due to the co-presence of beneficial elements such as ascorbic acid and alpha-tocopherol which are known to inhibit the formation of nitrosamine.