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1.
Journal of Materials Science: Materials in Electronics - Gum kondagogu (GK), a natural biopolymer was successfully employed in the synthesis of trimetallic (AgAuPd) nanocomposites and characterized...  相似文献   
2.
在不考虑等离激元诱导效应的情况下,利用玻尔兹曼平衡方程方法从理论上研究了金属光栅结构对石墨烯光电导率的直接影响。研究发现由于光栅对入射光的动量补偿作用,光栅对石墨烯的带内光电导率产生了显著的影响,使得在石墨烯的太赫兹吸收窗口区域出现光电导率峰,并且该光电导率峰可由光栅周期、电子浓度以及温度来调控。该研究有助于深入理解光栅结构对光电材料的影响,并表明光栅-石墨烯体系可以应用于可调谐的太赫兹光电器件,如太赫兹探测器。  相似文献   
3.

The friction stir welded joint of wrought ZM21 alloy was divided into five parts, and their localized creep behavior was studied via the impression method. The tests were carried out in the stress range of 300–450 MPa (σimp/G ≈ 0.02–0.03) and in the temperature range of 448–523 K. Optical and SEM micrographs and EDS taken before and after the impression tests were used to study the microstructure of various zones of the FS welded joint. Power law was found to satisfactorily relate the stress and strain rates. The steady-state impression velocity was found to vary significantly between the advancing and retreating sides of TMAZ and HAZ. For TMAZ, the creep exponent on the AS was 4.8, and on the RS, it was 7.8. The activation energy on the AS was ~?133 kJ/mol, and on the RS, it was ~?101 kJ/mol. Similarly, for HAZ, the creep exponent on the AS was found to be 5.5 and on the RS, it was 4.9. The activation energy on the AS was ~?86 kJ/mol and on the RS, it was ~?232 kJ/mol. The cross-over of steady-state impression velocity of different zones indicates that the weak zone was temperature and stress dependent. Within the stresses and temperatures studied, the weld zone's creep resistance (i.e., lower minimum impression velocity) was found to be better than the base material. As it is with most magnesium alloys, dislocation climb was found to be the operative mechanism in the FS weldments of ZM21 alloy. The rate-controlling mechanism remains to be identified because the wide variation in n and Q values suggests that different creep mechanisms are in operation in different zones.

Graphical abstract
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4.
5.
(Ta2O5)1-x- (TiO2)x (TTOx) thin films, with x = 0, 0.03, 0.06, 0.08, and 0.11, were deposited using magnetron direct current (DC) sputtering method onto the P/boron-silicon (1 0 0) substrates by varying areas of Tantalum and Titanium metallic targets, in oxygen environment at ambient temperature. The as-deposited thin films were annealed at temperatures ranging from 500 to 800 °C. Generally, the formation of the Ta2O5 structure was observed from the X-ray diffraction measurements of the annealed films. The capacitance of prepared metal– oxide– semiconductor (MOS) structures of Ag/TTOx/p-Si was measured at 1 MHz. The dielectric constant of the deposited films was observed altering with varying composition and annealing temperature, showing the highest value 71, at 1 MHz, for the TTOx films, x = 0.06, annealed at 700 °C. With increasing annealing temperature, from 700 to 800 °C, the leakage current density was observed, generally decreasing, from 10?5 to 10?8 A cm?2, for the prepared compositions. Among the prepared compositions, films with x = 0.06, annealed at 800 °C, having the observed value of dielectric constant 48, at 1 MHz; and the leakage current density 2.7 × 10?8 A cm?2, at the electric field of 3.5 × 105 V cm?1, show preferred potential as a dielectric for high-density silicon memory devices.  相似文献   
6.
The chromium-promoted preparation of forsterite refractory materials from ferronickel slag was investigated by microwave sintering of the slag with the additions of sintered magnesia and 0–10 wt% chromium oxide (Cr2O3). The thermodynamic calculations revealed that the addition of Cr2O3 can promote the formations of spinel and liquid phase and maintain high content of forsterite below 1500 °C. The experimental results showed that there existed a stronger promoting effect of Cr2O3 additive on the properties of refractory materials in the microwave field than that in conventional sintering. It was attributed to the preferential formation and growth of spinel with stronger microwave absorption than other phases (e.g., enstatite), the existence of more forsterite, and the enhanced densification in association with the presence of more liquid phase at the same temperature. By microwave sintering of the mixture of ferronickel slag, 25 wt% sintered magnesia, and 4 wt% Cr2O3 at 1350 °C for 20 min, a superior refractory material with refractoriness of 1801 °C, thermal shock resistance of 6 times, bulk density of 2.97 g/cm3, apparent porosity of 1.4%, and compressive strength of 197 MPa was obtained. Compared with that prepared by conventional sintering at 1350 °C for 2 h, the refractoriness and thermal shock resistance were increased by 175 °C and 100%, respectively. The present study provided a novel method for preparing high-quality refractory materials from ferronickel slag and relevant industrial wastes.  相似文献   
7.
To restrain edge chipping and elucidate its mechanism during machining, the initiation of edge chipping was investigated in this study from the propagation properties of stress waves in the fractured media. Three technological principles of the support for chipping suppression were proposed to reduce the intensity of reflected extension waves, namely, the wave impedance matching, the smaller residual gap and the higher viscosity of the gap filler between the workpiece and the support. As demonstrated from the experimental results, using brass support with non-solid epoxy gap filler can significantly restrain the edge chipping of pressureless sintered silicon carbide during grinding.  相似文献   
8.
Silicon - In this study, the stir casting processing technique was used to produce the AZ91E hybrid composite reinforced with Silicon Carbide (SiC) and Fly ash (FA) particles in different weight...  相似文献   
9.
Diao  Wenyu  Xu  Jiayue  Rao  Xi  Zhang  Yongping 《Catalysis Letters》2022,152(4):1029-1039
Catalysis Letters - It is crucial to explore a facile synthesis of rutile TiO2 nanorods anchored at carbon cloth at low temperature for applicable air purifier. Herein, antler-like TiO2 rectangular...  相似文献   
10.
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