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1.
By mans of a chemical synthesis technique stoichiometric CdTe-nanocrystals thin films were prepared on glass substrates at 70 °C. First, Cd(OH)2 films were deposited on glass substrates, then these films were immersed in a growing solution prepared by dissolution of Te in hydroxymethane sulfinic acid to obtain CdTe. The structural analysis indicates that CdTe thin films have a zinc-blende structure. The average nanocrystal size was 19.4 nm and the thickness of the films 170 nm. The Raman characterization shows the presence of the longitudinal optical mode and their second order mode, which indicates a good crystalline quality. The optical transmittance was less than 5% in the visible region (400–700 nm). The compositional characterization indicates that CdTe films grew with Te excess. 相似文献
2.
A. I. D’Souza M. G. Stapelbroek P. N. Dolan P. S. Wijewarnasuriya R. E. DeWames D. S. Smith J. C. Ehlert 《Journal of Electronic Materials》2003,32(7):633-638
The 1/f noise in photovoltaic (PV) molecular-beam epitaxy (MBE)-grown Hg1−xCdxTe double-layer planar heterostructure (DLPH) large-area detectors is a critical noise component with the potential to limit
sensitivity of the cross-track infrared sounder (CrIS) instrument. Therefore, an understanding of the origins and mechanisms
of noise currents in these PV detectors is of great importance. Excess low-frequency noise has been measured on a number of
1000-μm-diameter active-area detectors of varying “quality” (i.e., having a wide range of I-V characteristics at 78 K). The
1/f noise was measured as a function of cut-off wavelength under illuminated conditions. For short-wave infrared (SWIR) detectors
at 98 K, minimal 1/f noise was measured when the total current was dominated by diffusion with white noise spectral density
in the mid-10−15A/Hz1/2 range. For SWIR detectors dominated by other than diffusion current, the ratio, α, of the noise current in unit bandwidth
in(f = 1 Hz, Vd = −60 mV, and Δf = 1 Hz) to dark current Id(Vd = −60 mV) was αSW-d = in/Id ∼ 1 × 10−3. The SWIR detectors measured at 0 mV under illuminated conditions had median αSW-P = in/Iph ∼ 7 × 10−6. For mid-wave infrared (MWIR) detectors, αMW-d = in/Id ∼ 2 × 10−4, due to tunneling current contributions to the 1/f noise. Measurements on forty-nine 1000-μm-diameter MWIR detectors under
illuminated conditions at 98 K and −60 mV bias resulted in αMW-P = in/Iph = 4.16 ± 1.69 × 10−6. A significant point to note is that the photo-induced noise spectra are nearly identical at 0 mV and 100 mV reverse bias,
with a noise-current-to-photocurrent ratio, αMW-P, in the mid 10−6 range. For long-wave infrared (LWIR) detectors measured at 78 K, the ratio, αLW-d = in/Id ∼ 6 × 10−6, for the best performers. The majority of the LWIR detectors exhibited αLW-d on the order of 2 × 10−5. The photo-induced 1/f noise had αLW-P = in/Iph ∼ 5 × 10−6. The value of the noise-current-to-dark-current ratio, α appears to increase with increasing bandgap. It is not clear if
this is due to different current mechanisms impacting 1/f noise performance. Measurements on detectors of different bandgaps
are needed at temperatures where diffusion current is the dominant current. Excess low-frequency noise measurements made as
a function of detector reverse bias indicate 1/f noise may result primarily from the dominant current mechanism at each particular
bias. The 1/f noise was not a direct function of the applied bias. 相似文献
3.
R. Adam Rebeles A. Hermanne S. Takcs F. Trknyi S.F. Kovalev A. Ignatyuk 《Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms》2007,260(2):672-684
In the frame of a systematic study of light ion induced threshold reactions on natural tin (Sn) excitation functions for alpha particles induced reactions are presented in a 12–38 MeV energy domain. Using a stacked foil activation method the following radioisotopes were identified: 116Te, 117Te, 118Te, 119Te, 121Te, 123Te, 117Sb, 118Sb, 120Sb, 122Sb, 124Sb, 126Sb, 117Sn, 111In. The experimental cross sections for these isotopes are presented for the first time in this energy range and a direct comparison with values calculated with the ALICE-IPPE code is discussed. Possible use of these data for production of some isotopes relevant in nuclear medicine is suggested. 相似文献
4.
获得了一种研究碲镉汞深能级的方法。通过分析迁移率 载子浓度与温度的关系,可以得到关于深能级的重要依据。 相似文献
5.
The effect of annealing on microstructure,adhesive and frictional properties of GeSb 2 Te 4 films were experimentally studied.The GeSb 2 Te 4 films were prepared by radio frequency(RF)magnetron sputtering,and annealed at 200℃and 340℃under vacuum circumstance,respectively.The adhesion and friction experiments were mainly conducted with a lateral force microscope(LFM)for the GeSb 2 Te 4 thin films before and after annealing.Their morphology and phase structure were analyzed by using atomic force microscopy(AFM)and X-ray Diffraction(XRD)techniques,and the nanoindention was employed to evaluate their hardness values.Moreover,an electric force microscope(EFM)was used to measure the surface potential. It is found that the deposited GeSb 2 Te 4 thin film undergoes an amorphous-to-fcc and fcc-to-hex structure transition;the adhesion has a weaker dependence on the surface roughness,but a certain correlation with the surface potential of GeSb 2 Te 4 thin films.And the friction behavior of GeSb 2 Te 4 thin films follows their adhesion behavior under a lower applied load.However,such a relation is replaced by the mechanical behavior when the load is relatively higher.Moreover,the GeSb 2 Te 4 thin film annealed at 340℃presents a lubricative property. 相似文献
6.
静压下ZnS:Te中Te等电子陷阱的发光 总被引:2,自引:2,他引:0
研究了4块ZnS:Te薄膜样品(Te组分从0.5%到3.1%)的光致发光谱在常压下的温度特性.对于Te组分较小的2块样品观察到2个发光峰,分别来自Te1和Te2等电子陷阱;而对Te组分较大的2块样品则只观察到1个来自Te2等电子陷阱的发光.我们还研究了这些发光峰在低温1.5K下的流体静压压力行为.观察到与Te1有关的发光峰压力系数比ZnS带边的要大很多,而与Te2有关的发光峰压力系数则比带边小.根据Koster-Slater模型,价带态密度半宽随压力的增加是Te1中心有较大压力系数的主要原因,而Te1和Te2中心的不同压力行为则是由于压力对两者缺陷势增强的不同效果引起的. 相似文献
7.
通过适当的工艺措施,采用Bridgman法生长了直径为30mm的X射线及γ射线探测器级的Cd.9Zn0.1Te晶锭.测试结果表明:该晶锭结晶质量良好,位错密度低,成分均匀,杂质含量低,红外透过率和电阻率都十分接近本征Cd.9Zn0.1Te的值.并从晶体的生长特性、缺陷和杂质的角度,分析了生长高性能晶体的条件,研究了生长Cdl-xZnxTe晶体的x值与缺陷和杂质浓度之间的关系. 相似文献
8.
9.
The growth of high quality Hg0.8Cd0.2Te bulk single crystals by CVT, combined with an in-situ seeding technique, is reported here for the first time. For this
purpose, a temperature difference of 590° → 540° C with a gradient of 40°-50° C/cm at the solid-vapor interface, and about
0.1 atm of HgI2 as a transport agent, were employed. The bulk crystals have the expected stoichiometry and compositional homogeneity. Etch
pit densities of 104-105 cm−2 on the (111) face and hitherto unreported etch pits on the (100) face were observed in this work. Possible origins of the
sub-grain structure are discussed. 相似文献
10.
The employment of the Zn(Se,Te) pseudo-graded contacting scheme to p-type ZnSe-based alloys contributes directly to the recent
demonstration of room temperature continuous-wave operation of II– VI green-blue laser diodes. Contact ohmicity is maintained
down to cryogenic temperatures which enabled the investigation of electrical transport properties associated with the p-type
nitrogen-doped ZnSe, Zn(S,Se), and (Zn,Mg)(S,Se). The observation of both persistent photoconductivity and a metastable population
of holes which are in thermodynamic equilibrium with hydrogenic acceptors having reduced activation energy suggests the presence
of a DX-like behavior for holes in p-type (Zn,Mg)(S,Se). 相似文献