棱镜耦合自动测试系统设计

基于单片机与PC上位机,设计了包括硬件和软件的棱镜耦合自动测试系统。该系统控制了步进电机的运转状态,实现了光强数据的自动采集、处理,并通过软件完成数据存储、分析及图形显示。实验结果表明,该系统满足棱镜耦合技术要求,实验效果良好,实现了高精度、高自动测试的棱镜耦合技术。     

As2S8平面波导：退火-光照-退火循环作用下折射率的变化及光传输特性

蒸发沉积态的非晶半导体As2S8薄膜在退火-饱和光照-退火循环处理下,其折射率变化存在可逆。而对于在退火-非饱和光照-退火的连续处理,发现As2S8薄膜折射率先增加达到最大值,然后在退火作用下才出现可逆。退火处理引起S-S键态变化,导致非晶半导体As2S8薄膜结构达到一定稳定状态,伴随着薄膜厚度的减小。As2S8平面波导在130C 温度退火,然饱和光照,又经过130C 温度退火处理后,显示出约为0.27 dB/cm低的传输损耗,在波长632.8 nm导模下有良好的光传输性能。     

As_2S_8 planar waveguide:refractive index changes following an annealing and irradiation and annealing cycle,and light propagation features

The refractive index of as-evaporated amorphous semiconductor As₂S₈ film upon an annealing and saturation irradiation and annealing cycle is reversible.Upon successive treatment with annealing and non-saturation irradiation and further annealing,the refractive index of the as-evaporated amorphous semiconductor As₂S₈ film reaches a maximum value and then its reversibility occurs upon annealing.The annealing of the amorphous semiconductor As₂S₈ films results in the stabilization of the structure through changes of the S-S bonds in the nearest environment,accompanied by a decrease of film thickness.The As₂S₈ planar waveguide after annealing（130℃） and saturation irradiation and annealing（130℃） shows a good propagation characteristic with ca.0.27 dB/cm low propagation loss of the 632.8 nm guided mode.