网络社区动态角色挖掘算法研究*

传统的社区挖掘以社区为单位,忽略了社区内部成员的性质和地位。为了提高社区挖掘的精度,为个性化推荐提供一个优化的基础平台,基于优先情节和增长定律,提出了一种新颖的动态角色挖掘算法。首先根据节点的度数分布逆向推导社会网络的形成演化机制,构造网络时间轴;然后根据时间轴逐步向网络中添加新节点,同时进行社区挖掘和角色划分。在人工网络和真实世界网络上进行了多次测试,并与G-N算法进行了比较,取得了较好的结果。实验证明,应用动态角色挖掘算法得到的社区都是强连通社区,具有较高的准确性和实用价值。     

钙钛矿太阳能电池稳定性研究进展

从钙钛矿晶格结构和器件结构入手,介绍了钙钛矿电池的发展历程,总结了A位,B位及X位的组分调控方法、一步法、两步法及其他成膜方法,形貌控制方法,最后,详细讨论了钙钛矿太阳能电池稳定性的影响因素,光热湿等因素是引起钙钛矿晶体分解,导致电池性能下降的主要原因。最后,稳定性问题已经成为阻碍钙钛矿电池产业化的最大的障碍,介绍了钙钛矿太阳能电池当前稳定性问题的主要解决方案:开发更稳定的钙钛矿结构,开发用于控制晶粒生长的新添加剂,以及选择具有优异性能的空穴传输层和电子传输层。      

Effects of K ions doping on the structure, morphology and optical properties of Cu2FeSnS4 thin films prepared by blade-coating process

Quaternary chalcogenide Cu2FeSnS4 (CFTS) nanoparticles, as a kind of potential absorber layer material in thin film solar cells (TFSCs), were successfully synthesized by using a convenient solvothermal method. Alkali element K is incorporated into CFTS thin films in order to further improve the surface morphology and the optical properties of related films. X-ray diffraction (XRD), Raman spectroscopy and field emission scanning electron microscopy (FESEM) were used to characterize the phase purity, morphology and composition of CFTS particles and thin films. The results show that the particle elemental ratios of Cu/(Fe+Sn) and Fe/Sn are 1.2 and 0.9, respectively, which are close to the characteristics of stoichiometric CFTS. The band gaps of CFTS films before and after doping K ions are estimated to be 1.44 eV and 1.4 eV with an error of ±0.02 eV. This work has been supported by National Natural Science Foundation of China (No. 51674026), and the Fundamental Research Funds for the Central Universities in 2015 (No.FRF-BD-15-004A). E-mail:chywang@yeah.net      

基于SOA的实时ETL的研究与实现

本文对基于SOA技术实现实时ETL过程进行了研究，并提出了一种实时ETL过程解决方案，为政府部门、企业的决策者对实时数据的需求提供了正确的保障决策，并给出了一套完整的系统架构。     

基于SOA的实时ETL的研究与实现

本文对基于SOA技术实现实时ETL过程进行了研究，并提出了一种实时ETL过程解决方案，为政府部门、企业的决策者对实时数据的需求提供正确的保障决策，给出一套完整系统架构。     

偏压对ITO薄膜生长模式和光电性能的影响

为明确溅射偏压对ITO薄膜性质的影响,用射频磁控溅射法于室温在玻璃衬底制备出ITO透明导电薄膜,研究了不同偏压下ITO薄膜的生长模式、光学和电学性能.结果表明:随着偏压的增加,薄膜沉积模式经历了沉积、沉积和扩散、表面脱附3种方式;AFM和SEM显示,偏压为100 V时,膜层表面光洁、均匀,粗糙度最小,均方根粗糙度为1.61 nm;XRD分析表明偏压会影响与薄膜的择优取向,偏压为100 V时,薄膜晶粒取向为(222)面;薄膜偏压为120 V时,薄膜的光电性能最佳,电阻率最低为2.59×10-4Ω.cm,可见光区的平均透过率在85%以上;偏压的大小使薄膜的吸收边发生了"蓝移"或"红移".     

废SCR催化剂钠化焙烧回收钨和钒的机理探究

文章从热力学角度,分别以温度和碳酸钠加入量为变量,用热力学软件HSC Chemistry计算了蜂窝状废SCR催化剂钠化焙烧的过程,得到了相应的相图,并分析了其对钨和钒浸出率的影响。研究了不同动力学条件下钨和钒的浸出率,得到最佳焙烧条件为：碳酸钠加入量为30%、焙烧温度为800 ℃、粒度为75～100 μm、焙烧时间为2～2.5 h。采用XRD和SEM进行物相和形貌分析。从理论和实验上探究了失效SCR催化剂钠化焙烧过程的机理。     

Synthesis and characterization of Cu2ZnSnS4 from Cu2SnS3 and ZnS compounds

The Cu2ZnSnS4 (CZTS) powders are successfully synthesized by using ZnS and Cu2SnS3 as raw materials directly without any intermediate phase at 450 °C for 3 h in Ar atmosphere. The crystalline structure, morphology and optical properties of the CZTS powders are characterized by X-ray diffraction (XRD), Raman spectrum, field emission scanning electron microscopy (FESEM) and ultraviolet-visible (UV-vis) spectrophotometer, respectively. The results show that the band gap of the obtained CZTS is 1.53 eV. The CZTS film is fabricated by spin coating a mixture of CZTS powders and novolac resin with a weight percentage of 30%. The photoelectrical properties of such CZTS films are measured, and the results show an incident light density of 100 mW.cm-2 with the bias voltage of 0.40 V, and the photocurrent density can approach 9.80×10-5 A.cm2within 50 s, giving an on/off switching ratio of 1.64.     

Preparation and characteristics of Nb-doped indium tin oxide thin films by RF magnetron sputtering

Niobium-doped indium tin oxide(ITO:Nb)thin films are fabricated on glass substrates by radio frequency(RF)magnetron sputtering at different temperatures.Structural,electrical and optical properties of the films are investigated using X-ray diffraction(XRD),atomic force microscopy(AFM),ultraviolet-visible(UV-VIS)spectroscopy and electrical measurements.XRD patterns show that the preferential orientation of polycrystalline structure changes from(400)to(222)crystal plane,and the crystallite size increases with the increase of substrate temperature.AFM analyses reveal that the film is very smooth at low temperature.The root mean square(RMS)roughness and the average roughness are 2.16 nm and 1.64 nm,respectively.The obtained lowest resistivity of the films is 1.2×10-4?.cm,and the resistivity decreases with the increase of substrate temperature.The highest Hall mobility and carrier concentration are 16.5 cm2/V.s and 1.88×1021 cm-3,respectively.Band gap energy of the films depends on substrate temperature,which is varied from 3.49 eV to 3.63 eV.