一种基于抽取LMS的距离旁瓣抑制方法

在噪声雷达中，传统相关处理方法的距离旁瓣受到时宽带宽积的限制，在有限相关处理时间内得到的距离旁瓣较高，会造成微弱目标被强目标、杂波旁瓣淹没的现象。提出一种基于抽取最小均方（Least Mean Square,LMS）滤波的噪声雷达旁瓣抑制方法，将LMS滤波器的系数作为距离压缩结果，从而获取较低的距离旁瓣。对该方法的性能进行了理论分析，并通过数字仿真验证了算法的有效性和理论分析的正确性。     

Influence of selenium growth condition on the photovoltaic conversion efficiency of Sb2Se3 as the solar cell absorption layer

Journal of Materials Science: Materials in Electronics - The influences of the selenium (Se) growth condition on the electronic level structure including deep defects and further on the...     

Co-precipitation synthesis of ZnAl2O4: Cr3+ phosphor for better light penetration in pc-LED

Cr doped ZnAl₂O₄ spinel samples were prepared by the traditional solid state reaction and co-precipitation synthetic route, and the results suggest that the co-precipitation method has some superiority in contrast to the solid state reaction method. XRD, FT-IR, and XPS spectra confirmed that the well-crystallized spinel cubic phase of ZnAl₂O₄: Cr³⁺ samples were successfully formed. The morphology of the samples was investigated by FE-SEM and FE-TEM, and the results show that the samples by the co-precipitation route can generate a smaller size of particles compared to the solid state reaction. Photoluminescence excitation spectra monitored at 686 nm are comprised of two broad excitation bands near 530 nm and 395 nm, and the emission spectra show emissions ranging from 640 to 780 nm, due to the ²E?→?⁴A₂ spin-forbidden transition of Cr³⁺ ions in spinel lattices. The optimized concentration monitored at 686 nm is 1%, while at 693 nm is 3.5%. Compared with the samples by solid state reaction method, the samples by co-precipitation method show preferable luminescent properties, such as the higher photoluminescence intensity and higher quantum efficiency. Several phosphor-converted LEDs were to investigate the applicability of the prepared samples. The results confirm that the phosphor has potential applications in plant growth and supplementing the red region in white-LEDs and the phosphors prepared by co-precipitation are more suitable to be used in phosphor-converted LED devices due to their preferable luminescent properties.

     

Cu掺杂对有序Sr3YCo4-xCuxO10.5+δ多晶的结构与物理性能的影响

采用固相反应法制备了四方Sr3YCo4-xCuxO10.5+δ(x=0~1.0)多晶。用热重-差示扫描量热分析,X射线衍射研究了多晶的有序化相变及结构。在固溶范围内(x=0~0.4),观察到有序峰(103)和(215),说明四方Sr3YCo4-xCuxO10.5+δ多晶为超结构,这是由于合成时在1000℃以上发生了吸氧(δ)有序化相变；当x=0.6~1.0时,978℃时在晶界处形成了单斜杂相,破坏了Sr3YCo4-xCuxO10.5+δ多晶的有序。当x=0~0.4时,多晶呈半导体输运行为。随着Cu掺杂量的增加,Co4+提供的空穴载流子浓度增大,电阻率明显下降；由于Cu的固溶,自旋熵增加,载流子浓度和自旋熵的共同作用使x=0~0.2多晶的热电势不变,x=0.4的热电势降低。并且Cu掺杂导致的晶格畸变使Co3+离子由高自旋态转变为高/低自旋混合态,磁化强度和铁磁转变温度(Tc)降低,磁结构由G-型反铁磁转变为铁磁。在进行二次烧结后,300K时电阻率明显降低,热电势为一次烧结的2倍,可能是二次烧结使多晶的有序化程度增大,提高了铁磁有序排列。     

高面板坝全寿命周期变形控制方法及应用

高面板坝的变形对面板的安全运行有着特别重要的影响，国内外已建的高面板坝工程中，因坝体变形大导致防渗面板挤压破损，坝体渗漏量大的实例较多，不得不降低水库水位进行修复处理，造成较大的经济损失乃至给大坝的长期运行留下安全隐患。通过发生挤压破损的实例分析，发现变形控制缺乏系统性是发生面板挤压破损的主要因素，为预防面板破损，系统提出了“控制坝体总变形，转化有害变形，适应纵向变形”的坝体变形控制方法，并在使用软硬岩混合料筑坝的董箐面板堆石坝中得到的应用，取得了良好效果，该工程运行至今达十余年，未见面板有挤压破损迹象，该方法对建设200 m以上乃至300 m级超高面板坝具有重要借鉴意义。