Grain growth kinetics in Dy-doped Bi0.5Na0.5TiO3 ceramics

Dysprosium-doped bismuth sodium titanate ceramics were prepared using the conventional mixed-oxide method. The amount of dysprosium used was varied from 0 to 2 at.%. The mixed powders were calcined at 800 °C and checked for phase purity using X-ray diffraction technique. The calcined powders were then cold-pressed into pellets and sintered at 1050 °C for the time ranging from 2 to 48 h. The ceramics were checked for phases and microstructures using an X-ray diffractometer and a scanning electron microscope, respectively. The analysis showed that undoped BNT ceramics sintered at longer time exhibited a significant grain growth with non-uniform grain size distribution and shape. The Dy-doped BNT however showed a much more limited grain growth behavior, resulting in smaller grain size and more equiaxed grain shape. It was also found that all Dy-doped BNT ceramics sintered at 48 h possessed lower porosity than those sintered for shorter time.     

Sintering studies of nano-crystalline zinc oxide

Sintering and grain growth of nano-crystalline undoped ZnO has been studied in detail over a wide range of temperature and holding time. Below 800 °C, sintering of over 70% theoretical density is not observed, irrespective of particle size. At 900 °C for 6 h, the nano-crystalline sample sinters to 99% of theoretical density whereas the density for as received sample is 93% of theoretical density. However, at 1300 °C or higher, the densification is found to be much faster and after a few hours becomes independent of holding time. Grain growth studies reveal a similar feature of attaining saturation over holding time. The average saturated grain size is found to be ∼1.5 and ∼2.2 μm at 800 and 900 °C, respectively, while at 1300 °C or higher, it is in between 12 and 13 μm.     

Low temperature synthesis of aluminium titanate by an aqueous sol-gel route

Formation of aluminium titanate (AT) has been achieved at low temperature through sol-gel process using boehmite and titanium hydroxide as precursors by controlling the particle size at nanoscale followed by in-situ peptisation. The formations of AT phase, particle size distributions, sintering and thermal expansion characteristics, and microstructural features have been reported. DTA and XRD analysis have been performed to confirm the formation of AT. A 94% relative density was obtained for aluminium titanate sintered at 1550 °C with controlled grain size in the range of 2-3 μm.     

Evolution of grain structure in thin film reactions

In this paper, we examine, both experimentally and theoretically, the kinetics of formation and microstructure of product phases in thin film reactions, using the Nb/Al and Ti/Al systems as our prototypes. The results of calorimetry and microscopy studies are interpreted using simple kinetic and morphology models. In particular, the kinetic models employed here focus on the nucleation and growth components of the phase formation process and the morphology models provide a starting point for the classification of product grain structures. An erratum to this article is available at .     

Electrical/electronic effects of titanium and iron impurities in EFG and FZ solar cell silicon: SPV/EBIC analysis

In this paper results on surface photovoltage (SPV) and electron beam induced conductivity (EBIC) studies of edge-defined film-fed growth (EFG) and floating zone (FZ) silicon solar cell materials (both p-type) are presented. A systematic comparison based on minority carrier diffusion length and carrier recombination is made between: (i) samples contaminated with Ti and/or Fe, (ii) samples gettered by phosphorous diffusion, and (iii) as-received samples. Deep level transient spectroscopy (DLTS) measurements, together with the iron-boron (FeB) pairing kinetics [1] have successfully been used to detect the presence of Fe in the samples. Even though this process is effective in revealing Fe impurities in p-type FZ silicon it is evidently not suitable for Fe identification in p-type EFG silicon. Ti, like Fe, is found to be a prominent lifetime-limiting metallic impurity in both EFG and FZ silicon. Phosphorous diffusion is proven to be an effective external gettering technique for fast-diffusing impurities such as Fe, but not for Ti.     

激光结晶a-Si:H SOI离子注入和快速退火

本文对激光结晶a-Si∶H SOI结构砷注入和快速退火行为作了研究.a-Si∶H激光结晶有Lp-LCR,OD,FCR-2,FCR-1四个结晶区.用剖面电镜观察了结晶区的结构.扩展电阻测量表明Lp-LCR区中有两种扩散机制,即杂质在晶粒体内扩散和沿缺陷扩散.OD区中有三种扩散形式,除有上述两种以外,还有沿缺陷的扩散.首次比较了沿晶界和缺陷的扩散速度.     

Microstructure evolution during metal forming processes

Recrystallization and grain growth evolutions during metal forming processes are considered. Coupling between the thermo-mechanical and microstructure processes is realized. Die forging of a rear-axle flange is simulated numerically on the base of the finite element method. Material parameters of the models are obtained experimentally. The influence of interpass and holding times on grain size distributions in the end product is shown.     

粒度控制——页岩、煤矸石空心砖原料制备的关键

阐述了页岩、煤矸石的原料粒度对制砖性能的影响,介绍了几种典型的控制颗粒粒度的工艺方案;简要分析了几种筛分机械的优缺点,着重介绍MVS电磁振动高频振网筛在几个使用现场的应用结果,为制砖企业解决原料生产的难题提供了办法。     

粒界缓冲型展宽效应对PTC材料温度系数的影响

本文利用相变扩张理论分析了粒界缓冲型展宽效应对BaTiO_3系PTC陶瓷的介电系数及温度系数a_r的影响,指出了晶粒尺寸和温度系数的关系。