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1.
In order to enhance the visible light-driven photocatalytic H2 production activity of CdZnS, an ethylenediamine-assisted hydrothermal pathway was used to synthesize CdxZn1-xS(en) with different Cd/Zn molar ratios. It was found out that the prepared Cd0.5Zn0.5S(en) possessed the highest photocatalytic H2 production rate of 13539.0 μmol h?1 g?1 that was higher than that of CdZnS. The key to this achievement could be ascribed to the stacking faults formation, the optimum band gap with conduction band position and small crystallite size. Based on this, Cd0.5Zn0.5S(en) was modified by NiS for further improving the activity. The obtained Cd0.5Zn0.5S(en)NiS with NiS loading content of 0.25 wt% exhibited much higher photocatalytic H2 production rate, reaching up to 38187.7 μmol h?1 g?1 that were among the highest efficiencies for semiconductor photocatalysts ever reported. It was confirmed that the nanosized NiS anchored on Cd0.5Zn0.5S(en) interface, acting as electron trapping sites, attributed to the spatial suppressions of electron-hole recombination. Meanwhile, the NiS loaded on the surface optimized the photogenerated electron transfer pathway between the semiconductor materials that gives rise to significantly enhanced photocatalytic activity. This study would put forward a facile method for developing high photocatalytic activity and low-cost catalytic material for H2 production, which provide a new thought to address the global energy crisis and the environmental contamination.  相似文献   
2.
Owing to the excellent elastic properties and chemical stability, binary metal or light element borides, carbides and nitrides have been extensively applied as hard and low-compressible materials. Researchers are searching for harder materials all the time. Recently, the successful fabrication of nano-twinned cubic BN(Tian et al. Nature 493:385–388, 2013) and diamond(Huang et al. Nature 510:250–253, 2014) exhibiting superior properties than their twin-free counterparts allows an efficient way to be harder. From this point of view, the borides, carbides and nitrides may be stronger by introducing twins, whose formation tendency can be measured using stacking fault energies(SFEs). The lower the SFEs, the easier the formation of twins. In the present study, by means of first-principles calculations, we first calculated the fundamental elastic constants of forty-two borides, seventeen carbides and thirty-one nitrides, and their moduli, elastic anisotropy factors and bonding characters were accordingly derived. Then, the SFEs of the {111} 112 glide system of twenty-seven compounds with the space group F43 m or Fm3m were calculated. Based on the obtained elastic properties and SFEs, we find that(1) light element compounds usually exhibit superior elastic properties over the metal borides, carbides or nitrides;(2) the 5 d transitionmetal compounds(ReB_2, WB, OsC, RuC, WC, OsN_2, TaN and WN) possess comparable bulk modulus( B) with that of cBN( B = 363 GPa);(3) twins may form in ZrB, HfN, PtN, VN and ZrN, since their SFEs are lower or slightly higher than that of diamond(SFE = 277 mJ/m~2). Our work can be used as a valuable database to compare these compounds.  相似文献   
3.
《Ceramics International》2020,46(11):19092-19102
In previous works, it was found hard to synthesize “phase pure” ζ-Ta4C3-z at relatively low temperatures even by prolonged heating, though ζ-Ta4C3-z was believed stable till decomposition at ~2130°C. When the samples were subjected to TEM, vast richness of locally disordered structures in close relation with stacking of the close-pacted Ta-atom planes was observed. Although kinetic factors including diffusion of C atoms/vacancies and re-stacking of the Ta-atom planes explain the densely disordered structures, the richness of local disorders is a scenario that shows cohabitant of the cubic, rhombohedral, and hexagonal structures in a single grain, i.e. formation of a “hybrid grain” consisted of the three symmetries, indicating a transitional or intermediate stage before complete formation of the final phase of rhombohedral ζ-Ta4C3-z. This time tantalum carbide ceramics TaCx with C:Ta atomic ratios x = 0.66 and 0.7 were prepared by reaction hot pressing of TaC and Ta powder mixtures. 5–30 mol% Cu/Ag additives and heat treatments were used to reproduce “hybrid grains” to facilitate further TEM and HRTEM observations on the disordered hybrid grains to argue for the transitional/intermediate stage. The cohabitant cubic, rhombohedral, and hexagonal structures in single grains may also help explain the difficulty in identification of the various phases by XRD in the transitional/intermediate stage of ζ-Ta4C3-z reaction. Microstructural evolution and fracture toughness of the composites were also investigated.  相似文献   
4.
计量故障中的失压故障是目前电力计量系统常见的故障问题之一,传统的失压故障判定以终端告警为依据,判定维度单一,且终端告警存在误报、漏报的情况,导致了故障无法及时发现、无法实时处理。为了解决失压故障识别维度单一和终端漏报误报的问题,采用比较研究法,在前人使用机器学习算法解决故障识别问题的基础上,结合真实计量数据,构建失压关键指标,提出了一种基于Stacking模型融合的计量故障监测算法。经反复实例论证和理论测算,该算法相较于传统的机器学习算法,能够提升失压故障识别的效果,平均精确率0.99以上。该种算法的提出为计量故障识别提供了一种新的解决方案,为失压故障后电量追补提供了一种依据,为提升计量系统管理水平增加了一种手段。  相似文献   
5.
In the present study, a safer and more performance 270?W Direct Borohydride/Peroxide Fuel Cell (DBPFC) Stack has been constructed for an electrical hybrid motorbike application. Performance tests were carried out with single cell and 5–10–25?cell stacks. Performance loss has been not observed while stacking DBPFC because of the Independent Cell Liquid Distribution Network (ICLDN) system and special bipolar plate design. The power densities have been approximately 120?mWcm?2 for a single DBPFC and 25-cell DBPFC stack without any stacking loss. Additionally, the stack temperature has been controlled by keeping the oxidant concentration low, and it has been maintained at approximately 52?°C without using a cooling system. The short-term performances of the 25-cell DBPFC stack have been tested over 25?min and 50?min, which showed that the performance and stack security of the DBPFC are highly related to the oxidant properties, such as the concentration, temperature and feed type.  相似文献   
6.
The influence of particle size and morphology on grain refinement in low stacking fault energy(SFE)alloys was studied by comparing the grain structures in single-and multi-phase Al-bronze(AB)alloys following equal channel angular pressing(ECAP)between 350 and 500℃.In particular,nickel aluminium bronze(NAB)was chosen as it contained both coarse and fine rounded particles,as well as a lamellar phase which evolved during ECAP.Grain refinement in the single-phase alloy was achieved through dynamic recrystallisation initiated at deformed twin boundaries.By contrast,different mechanisms were observed in the particle-containing NAB.Recrystallisation around the coarse κⅡ particles(~5 μm)was promoted through particle stimulated nucleation(PSN),whereas recrystallisation in the region of the fine κⅣ(~0.4μm)was delayed due to the activation of secondary slip.Grain refinement in areas of the lamellar κⅢ showed significant variation,depending on the lamellar orientation relative to the shear plane of ECAP.As the lamellae deformed,numerous high angle grain boundaries were generated between fragments and served as nucleation sites for recrystallisation,while PSN occurred around spheroidised lamellae.The spreading of the κⅢ particles by ECAP then enhanced the total area of recrystallised grains.  相似文献   
7.
基于XGBoost与Stacking模型融合的短期母线负荷预测   总被引:1,自引:0,他引:1  
母线负荷预测对于电网安全稳定调度具有重要意义,但母线负荷随机波动性较强,其负荷类型因供电区域的差异而不同。为此,提出一种基于极限梯度提升(XGBoost)与Stacking模型融合的短期母线负荷预测方法。基于XGBoost建立多个母线负荷预测元模型,组合构成Stacking模型融合的元模型层,连接一个XGBoost模型对元模型进行融合,整体构成综合预测系统,并采用粒子群优化算法优化系统参数。通过对具有不同负荷属性的220 kV母线进行实例分析,验证了所提方法的有效性与适用性。  相似文献   
8.
Improvement in the time-zero dielectric breakdown (TZDB) endurance of metal-oxide-semiconductor (MOS) capacitor with stacking structure of Al/HfO2/SiO2/Si is demonstrated in this work. The misalignment of the conduction paths between two stacking layers is believed to be effective to increase the breakdown field of the devices. Meanwhile, the resistance of the dielectric after breakdown for device with stacking structure would be less than that of without stacking structure due to a higher breakdown field and larger breakdown power. In addition, the role of interfacial layer (IL) in the control of the interface trap density (Dit) and device reliability is also analyzed. Device with a thicker IL introduces a higher breakdown field and also a lower Dit. High-resolution transmission electron microscopy (HRTEM) of the samples with different IL thicknesses is provided to confirm that IL is needed for good interfacial property.  相似文献   
9.
Abstract

High Mn twinning induced plasticity (TWIP) steel is a new type of structural steel, characterised by both high strength and superior formability. TWIP steel offers an extraordinary opportunity to adjust the mechanical properties of steel by modifying the strain hardening. The use of TWIP steel may therefore lead to a considerable lightweighting of steel components, a reduction of material use and an improved press forming behaviour. These key advantages will help implement current automotive vehicle design trends which emphasise a reduction of greenhouse gas emissions and lowering of fuel consumption. In addition, high strength TWIP steel will effectively contribute to weight containment in vehicles equipped with hybrid and electric motors, as these are considerably heavier than conventional motors. The present review addresses all aspects of the physical metallurgy of the high strength TWIP steel with a special emphasis on the properties and key advantages of TWIP sheet steel products relevant to automotive applications.  相似文献   
10.
The optical emission of non-polar GaN/AlN quantum dots has been investigated. The presence of stacking faults inside these quantum dots is evidenced in the dependence of the photoluminescence with temperature and excitation power. A theoretical model for the electronic structure and optical properties of non-polar quantum dots, taking into account their realistic shapes, is presented which predicts a substantial reduction of the internal electric field but a persisting quantum confined Stark effect, comparable to that of polar GaN/AlN quantum dots. Modeling the effect of a 3 monolayer stacking fault inside the quantum dot, which acts as zinc-blende inclusion into the wurtzite matrix, results in an additional 30% reduction of the internal electric field and gives a better account of the observed optical features.  相似文献   
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