Constructing developable surfaces by wrapping cones and cylinders

We model developable surfaces by wrapping a planar figure around cones and cylinders. Complicated developables can be constructed by successive mappings using cones and cylinders of different sizes and shapes. We also propose an intuitive control mechanism, which allows a user to select an arbitrary point on the planar figure and move it to a new position. Numerical techniques are then used to find a cone or cylinder that produces the required mapping. Several examples demonstrate the effectiveness of our technique.     

Metalorganic chemical vapor deposition of silver thin films for future interconnects by direct liquid injection system

Deposition of Ag films by direct liquid injection-metal organic chemical vapor deposition (DLI-MOCVD) was chosen because this preparation method allows precise control of precursor flow and prevents early decomposition of the precursor as compared to the bubbler-delivery. Silver(I)-2,2-dimethyl-6,6,7,7,8,8,8-heptafluoro-3,5-octanedionato-triethylphosphine [Ag(fod)(PEt₃)] as the precursor for Ag CVD was studied, which is liquid at 30 °C. Ag films were grown on different substrates of SiO₂/Si and TiN/Si. Argon and nitrogen/hydrogen carrier gas was used in a cold wall reactor at a pressure of 50–500 Pa with deposition temperature ranging between 220 °C and 350 °C. Ag films deposited on a TiN/Si diffusion barrier layer have favorable properties over films deposited on SiO₂/Si substrate. At lower temperature (220 °C), film growth is essentially reaction-limited on SiO₂ substrate. Significant dependence of the surface morphology on the deposition conditions exists in our experiments. According to XPS analysis pure Ag films are deposited by DLI-MOCVD at 250 °C by using argon as carrier gas.     

Direct synthesis of copper faujasite

Copper containing faujasite has been successfully prepared for the first time using a direct synthesis method. Faujasite type zeolite can be prepared in the presence of copper species by tuning the synthesis conditions. Ammonium hydroxide was used to form a copper complex that was later mixed with the reacting gel. Sodium is required to obtain copper faujasite. The complete elimination of sodium ions from the starting gel produces amorphous material. Crystallization took place at 358 K for 11 days. Crystallization temperature of 373 K produces ANA type zeolite as an impurity. Increasing by two times the amount of copper complex added to the reacting gel increases the crystallization time of Cu-FAU from 11 to 20 days (the crystallization rate decreases). The copper containing faujasite obtained was characterized by XRD, FESEM, EDX, EPR, FT-IR, TPR, and BET. According to the XRD pattern only FAU type zeolite was obtained. According to TPR experiments, the reduction temperature for Cu²⁺ ions present in Cu-FAU prepared by direct synthesis was 70 K more than for Cu-FAU prepared by ion-exchange. This difference can be due to the different location of the copper ions in the supercages or in the sodalite cages of the faujasite.     

Improved direct bonding method of Nd:YVO4 and YVO4 laser crystals

We succeeded in the fabrication of bonded laser crystals composed of a neodymium-doped YVO₄ laser crystal (Nd:YVO₄) and its host crystals YVO₄ by a newly developed dry etching technique using an argon ion beam. The optical distortion caused by the bonded interface of size 5 mm × 6 mm was estimated to be 0.05λ at 633 nm. From the comparison of laser performance pumped by a laser diode, the bonded crystals could increase the laser output power by nearly twice that of the non-bonded crystals with the same degree of polarization of 99.2%. To analyze the mechanism of the enhanced reduction of the thermal load in the bonded crystals, numerical simulations with a finite-element method were also performed.     

An automatic torque ripple compensation system for direct drive motors

A serious problem in motion control is the occurrence of torque ripple. Since a direct drive (DD) motor with a magnet rotor uses a rare-earth magnet, the torque ripple is more serious than that of conventional servomotors. This paper presents an auto-compensation of torque ripple using a software-implemented torque observer. The frequency and amplitude of torque ripple can be obtained in the controller by using the estimated torque from an observer, and the autonomous generation of a compensating current component for a torque ripple is possible. The proposed algorithm has been verified by experiments.     

基于预前控制异步电机直接转矩控制方案的研究

在传统异步电动机直接转矩控制方案中，由于负载的变化规律不可预测，因此其常会带来较大的开关频率的变化，为此提出了一种基于预前控制的异步电动机直接转矩控制的方法。该方法依据前一个周期的磁链和转矩误差，对下一个开关周期所应施加到异步电动机的定子电压矢量进行预测，然后借助空间矢量PWM的方法，合成此开关电压矢量。样机实验结果表明，该方案不但能维持逆变器的开关频率基本恒定，而且还具有比传统直接转矩控制更为优良的动静态特性。     

ABB变频器在双馈发电机试验台上的应用

本文介绍了风力发电系统目前存在的技术方案，重点介绍了ABB用于双馈式风力发电系统的变频产品ACS800—67的特性，并对由其构建的发电机测试平台的案例进行了实验分析。     

应用烃类直接检测技术预测天然气藏

柴达木盆地位于青藏高原北部，是中国大型含油气盆地之一，历经４０年的勘探，发现了丰富的油气资源。柴达木盆地东部地区是第四纪沉降与沉积中心，区内第二系生储气岩厚度大、分布广、第四纪新构造运动形成的同生沉积构造发育、保存完整、具有形成大中型天然气田的地质条件。此外，由于该地区含气地层时代新、埋藏浅、成岩与胶结作用差、含气层厚度大、孔渗性好，加之构造条件简单，人文干扰小、是应用烃直接检测技术寻找天然气的有     

The 'Conceptual Change In Science' project

Abstract This paper outlines the work of the Conceptual Change in Science project, funded as part of the ESRC InTER programme. The aims of this research project are to clarify and describe the process of change in learners' conceptual understandings of natural phenomena. The domain of reasoning selected for study is that of mechanics. Computer software which may be useful in exploring and developing pupils' reasoning and promoting conceptual change in this domain is being developed and evaluated. The group that is carrying out the research is based at the Universities of Leeds, Glasgow and the Open University.     

P-channel Ge/Si Hetero-nanocrystal Based MOSFET Memory

The charge storage characteristics of P-channel Ge/Si hetero-nanocrystal based MOSFET memory has been investigated and a logical array has been constructed using this memory cell. In the case of the thickness of tunneling oxide T_ox=2nm and the dimensions of Si- and Ge-nanocrystal D_Si=D_Ge=5nm, the retention time of this device can reach ten years(~1×10~8s) while the programming and erasing time achieve the orders of microsecond and millisecond at the control gate voltage |V_g|=3V with respect to N-wells, respectively. Therefore, this novel device, as an excellent nonvolatile memory operating at room temperature, is desired to obtain application in future VLSI.