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排序方式: 共有221条查询结果,搜索用时 15 毫秒
1.
为了实现DSP芯片与串行A/D芯片的多信号通信,设计了TMS320F28335的多通道缓冲串口(McBSP)与串行A/D转换器ADS7863的硬件与软件接口。该设计中A/D转换器与McBSP串口直接相连,不需要占用并行数据总线,避免了总线冲突。通过在CCS环境下编程、调试,得到了满意的实验结果,验证了该接口设计的正确性。 相似文献
2.
Juan JiangSoon-Gil Yoon 《Journal of Alloys and Compounds》2011,509(6):3065-3069
Ferroelectric PMN-PT thin films with a thickness of 600 nm were epitaxially grown on buffered Si (0 0 1) substrates at a substrate temperature that ranged from 550 to 700 °C using pulsed laser deposition (PLD). LaNiO3 (LNO) electrode thin films with a resistivity of ∼1900 μΩ cm were epitaxially grown on CeO2/YSZ buffered Si (0 0 1) substrates. The PMN-PT thin films grown at 600 °C on LNO/CeO2/YSZ/Si substrates had a pure perovskite and epitaxial structure. The PMN-PT films exhibited a high dielectric constant of about 1818 and a low dissipation factor of 0.04 at a frequency of 10 kHz. Polarization-electric-field (P-E) hysteresis characteristics, with a remnant polarization of 11.1 μC/cm2 and a coercive field of 43 kV/cm, were obtained in the epitaxial PMN-PT films. 相似文献
3.
《Food Control》2015
Tree nut allergies are considered an important health issue in developed countries. To comply with the regulations on food labeling, reliable allergen detection methods are required. In this work we isolated almond-specific recombinant antibody fragments (scFv) from a commercial phage display library bypassing the use of live animals, hence being consistent with the latest policies on animal welfare. To this end an iterative selection procedure employing the Tomlinson I phage display library and a crude almond protein extract was carried out. Two different almond-specific scFv (named PD1F6 and PD2C9) were isolated after two rounds of biopanning, and an indirect phage ELISA was implemented to detect the presence of almond protein in foodstuffs. The isolated scFvs demonstrated to be highly specific and allowed detection of 40 ng mL−1 and 100 ng mL−1 of raw and roasted almond protein, respectively. The practical detection limit of the assay in almond spiked food products was 0.1 mg g−1 (110–120 ppm). The developed indirect phage ELISA was validated by analysis of 92 commercial food products, showing good correlation with the results obtained by a previously developed real-time PCR method for the detection of almond in foodstuffs. The selected phage clones can be affinity maturated to improve their sensitivity and genetically engineered to be employed in different assay formats. 相似文献
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5.
Mono-acidic liquid ion exchangers (extractants) containing the phosphonyl functional group arc reviewed. 相似文献
6.
Raquel Martín-Venegas M.Teresa Brufau Ana Maria Guerrero-Zamora Yves Mercier Pierre-André Geraert Ruth Ferrer 《Food chemistry》2013
dl-2-hydroxy-(4-methylthio)butanoic acid (HMTBA) is a source of dietary methionine (Met) that is widely used in poultry nutrition. We have previously shown that HMTBA is preferentially diverted to the transsulfuration pathway, which gives antioxidant metabolites such as taurine and glutathione. Therefore, here we hypothesize that this Met source can protect epithelial barrier function in an in vitro model of intestinal inflammation of Caco-2 cells. The results show that HMTBA prevents the increase in paracellular permeability induced by H2O2 or tumour necrosis factor-α. This effect can be attributed to the increased production of taurine and reduced glutathione. Similar results were obtained for dl-Met, although the protective role of the amino acid was less pronounced than that of the hydroxy analogue. In conclusion, the diversion to the transsulfuration pathway means that this Met precursor is of greater value than previously thought, due to its capacity to improve intestinal homeostasis and the quality of poultry products destined for human consumption. 相似文献
7.
FENG Ying HUANG ShiHua KANG Kai & FENG YuGuang Institute of Optoelectronic Technology Beijing Jiaotong University Beijing China 《中国科学:信息科学(英文版)》2010,(1)
The influence of channel length on the performances of carbon nanotube field effect transistors(CNT-FETs) has been studied.Buffered oxide etching was used to remove approximately a 60 nm layer from the original 100 nm silicon dioxide layer,to thin the dielectric layer of the back gate.Channel length of the CNT-FETs was changed along with the etching process.The dependence of drain-source current on gate voltage was measured to analyze the performance of the CNT-FETs,including the transconductance,carrier mo... 相似文献
8.
We report on the fabrication and the electrical characterization of platinum interconnects for novel non-volatile memory technologies. These nanowires present an important and essential contribution to the deep nanometer scaling of alternative architectures beyond CMOS, e.g. nanocrossbar arrays with resistance switching junctions. The nanowires, which have a thickness of 25 nm and a width ranging from 200 nm down to 40 nm, were patterned using electron beam direct writing. They were deposited by UHV electron beam evaporation in combination with a lift-off process.The electrical characteristic is increasingly affected by the contribution of surface effects like scattering at grain boundaries and scattering at the surfaces as the wire dimensions become smaller. With decreasing width of the platinum wire an increasing resistivity was observed, which is consistent with the theories of Fuchs-Sondheimer and Mayadas-Shatzkes. Our studies have shown that the investigated structures possess a high stability concerning the operational current densities up to 4 × 107 A/cm2, and an additional annealing step results in an improvement of the electrical wire properties, which is explained by a higher quality of the grain boundaries and side walls. 相似文献
9.
10.
A Review of Three‐Dimensional Resistive Switching Cross‐Bar Array Memories from the Integration and Materials Property Points of View 下载免费PDF全文
Jun Yeong Seok Seul Ji Song Jung Ho Yoon Kyung Jean Yoon Tae Hyung Park Dae Eun Kwon Hyungkwang Lim Gun Hwan Kim Doo Seok Jeong Cheol Seong Hwang 《Advanced functional materials》2014,24(34):5316-5339
Issues in the circuitry, integration, and material properties of the two‐dimensional (2D) and three‐dimensional (3D) crossbar array (CBA)‐type resistance switching memories are described. Two important quantitative guidelines for the memory integration are provided with respect to the required numbers of signal wires and sneak current paths. The advantage of 3D CBAs over 2D CBAs (i.e., the decrease in effect memory cell size) can be exploited only under certain limited conditions due to the increased area and layout complexity of the periphery circuits. The sneak current problem can be mitigated by the adoption of different voltage application schemes and various selection devices. These have critical correlations, however, and depend on the involved types of resistance switching memory. The problem is quantitatively dealt with using the generalized equation for the overall resistance of the parasitic current paths. Atomic layer deposition is discussed in detail as the most feasible fabrication process of 3D CBAs because it can provide the device with the necessary conformality and atomic‐level accuracy in thickness control. Other subsidiary issues related to the line resistance, maximum available current, and fabrication technologies are also reviewed. Finally, a summary and outlook on various other applications of 3D CBAs are provided. 相似文献