THE effect of Srandom DOPANT fluctuation on threshold voltage and drain current variation in junctionless nanotransistors

We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation (10000 randomizations). With this simulation, we could study the effects of varying the dimensions (length and width), and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region (off) and overthreshold (on). It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion (compared with that of the subthreshold). These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel.     

Sanitary legislation governing Food Services in Brazil

The Technical Regulation of Good Practices for Brazilian Food Services (Regulamento Técnico de Boas Práticas para Serviços de Alimentação do Brasil) can be complemented by sanitary surveillance agencies at the state, district and municipal levels by tailoring it to location-specific requirements. The purpose of the present study was to survey sanitary legislation governing Brazilian Food Services. During the period from November 2011 to November 2012, a survey was conducted with the sanitary surveillance agencies from the various states, capitals and the Federal District. A previously prepared and tested tool was used for data collection, comprising 10 questions. Only 10 (19.2%) of the sanitary codes had been established prior to RDC Resolution n° 216/2004 and were not complementary. Of the legislation cited as complementary, only the states of Santa Catarina, Rio Grande do Sul and São Paulo and the capital of the state of São Paulo truly presented additional and location-specific aspects. No legislation that was specific to hospital kitchens was found. The majority of participating coordination, including the Evaluation List for Good Practices in Food Services, was also verified; however, it had not been published. In conclusion, a gap in sanitary surveillance services exists, which was caused by the lack of location-specific food service regulations.     

位山引黄灌区泥沙淤积原因及处理对策

位山灌区是黄河下游大型引黄灌区 ,渠系泥沙淤积严重 ,泥沙处理困难。通过采用远距离输沙、集中处理沉沙区泥沙、分散沉沙和节水减淤等技术措施 ,减少了渠系的泥沙淤积。对清淤产生的泥沙 ,采取综合开发利用的技术和管理措施 ,取得了比较可靠的效果。     

适用于快速平台测井的多通道核能谱测井仪设计

介绍一种基于快速平台测井要求的多通道核能谱测井仪设计方案。复杂可编程逻辑器件的应用使仪器功能增强，规模减小。该系统可对岩性密度长短源距脉冲信号、自然γ能谱脉冲信号进行多道脉冲幅度分析，并对补偿中子测井信号及井下多路常规模拟信号、脉冲信号进行数字化采集。数据传输采用曼彻斯特编码，传输方式可选择20kB／s半双工(兼容Atlas 3508)或下行20kB／s、上行41．66或93．75kB／s全双工方式(兼容Atlas WTS)，适应挂接到不同测井系统的需要。     

现行规范对“锁住区”起点高度简化处理的影响

通过工程实例及理论分析 ,对横向风振“锁住区”问题进行了探讨 ,对《建筑结构荷载规范》(GB5 0 0 0 9— 2 0 0 1 )中有关这一方面内容存在的一些问题进行了分析 ,希望对工程设计人员能有所帮助     

Terminal velocity of non-spherical particles falling through a Carreau model liquid

A procedure has been proposed for the estimation of the terminal falling velocity of non-spherical particles moving in a Carreau model fluid in the transition flow region. The procedure is based on a modification of the relationship formerly developed for the fall of spherical particles including the particle dynamic shape factor. The suitability of the proposed procedure has been confirmed by good agreement between experimental and calculated terminal falling velocity data. In the experiments, the terminal falling velocity of short cylinders and rectangular prisms in polymer solutions of different measure of shear thinning and elasticity has been measured.     

The Effect of Structural Defects on the Thermal Conductivity of ZnS, ZnSe, and CdTe Polycrystals

ZnS, ZnSe, and CdTe polycrystals are experimentally investigated. Mechanisms are treated which restrict the thermal conductivity in samples prepared by recrystallization pressing and by deposition from the vapor phase and subjected to additional strain. Anomalies are observed on the temperature dependences of the thermal resistance of investigated samples, which are due to the special features of their phonon spectra and to the variation of the contribution made by longitudinal and transverse phonon branches to the heat transfer in the Debye temperature region and higher.     

On regular drawn symbolic picture languages

Drawn symbolic pictures are an extension of drawn pictures obtained by associating a symbol from an alphabet to each point of the picture. In the paper we will address some new interesting issues derived from the introduction of the symbols and we will identify the conditions, which ensure the preservation of properties holding for drawn pictures in the setting of the proposed extension.     

1/3码的动态CMOS全自检电路的设计

自检测电路设计方法有多种多样,本文中介绍了TSC电路的概念,并采用1/3码的动态CMOS设计TSC电路,通过在Cadence环境下仿真,仿真结果表明本设计可行。