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1.
The present research work concentrates on viscous dissipation, Dufour, and heat source on an unsteady magnetohydrodynamics natural convective flow of a viscous, incompressible, and electrically conducting fluid past an exponentially accelerated infinite vertical plate in the existence of a strong magnetic field. The presence of the Hall current induces a secondary flow in the problem. The distinguishing features of viscous dissipation and heat flux produced due to gradient of concentration included in the model along with heat source as they are known to arise in thermal-magnetic polymeric processing. The flow equations are discretized implicitly using the finite difference method and solved using MATLAB fsolve routine. Numerical values of the primary and secondary velocities, temperature, concentration, skin friction, Nusselt number, and Sherwood number are illustrated and presented via graphs and tables for various pertinent parametric values. The Dufour effect was observed to strengthen the velocity and temperature profile in the flow domain. In contrast, due to the impact of viscous dissipation, the local Nusselt number reduces. The study also reveals that the inclusion of the chemical reaction term augments the mass transfer rate and diminishes the heat transfer rate at the plate. 相似文献
2.
随着社会的进步和发展,计算机网络通信技术已被应用到实际生活、生产的各个方面,对人们的生活、生产等产生了深刻的影响。为此,文章就计算机通信及网络远程控制技术在实际生活中的应用问题进行了探究,旨在借助先进科技促进社会实现更优质发展。 相似文献
3.
针对配电自动化终端优化布局问题,提出了一种基于重要度排序的终端优化布局方法。首先以等年值综合费用为目标函数,供电可靠性和投入产出比为双重约束建立了配电自动化终端优化布局模型。然后通过分析配电自动化终端对供电可靠性提升的影响,给出各个节点的“二遥”及“三遥”终端安装重要度定义及计算公式。最后采用枚举法确定最优终端安装数量,基于节点终端安装重要度排序确定终端的最优安装位置。该方法考虑了已布局节点对剩余节点终端安装重要度的影响,能够在降低计算量的同时兼顾布局合理性。运用所提方法RBTS-BUS2系统及扩充模型进行终端优化布局并与智能优化算法的布局结果进行对比,验证了本文方法的有效性及优越性。 相似文献
4.
《Ceramics International》2022,48(8):10817-10820
Single-crystal grains of TaN were synthesized by heating Ta2O5, FeTa2O6, or FeTaO4 in a BN crucible together with Na metal in an Ar atmosphere at 1100 °C. The BN crucible acted a solid source of nitrogen. Aggregates of columnar ε-TaN single crystals 10–150 μm in size were formed on the inner wall of the BN crucible when either Ta2O5 or FeTa2O6 was used. On the other hand, platelet-like single crystals of θ-TaN 1–50 μm in size were obtained from FeTaO4. The results of wavelength-dispersive X-ray spectrometry indicated that the compositions of the ε-TaN and θ-TaN crystals were close to the stoichiometric ideal. 相似文献
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整个精确放疗流程最关键、最基础的一个环节就是定位CT扫描精确程度,做好定位CT的质控关乎整个放疗流程的成败。介绍了JJG(闽)1086-2018放射治疗CT模拟定位机X射线辐射源在检定和质控中的流程和方法,从剂量性能要求、图像成像质量和机器机械精度方面对CT模拟定位机的质量控制做了定量的要求。连续8个月的测试结果表明:CT测量值误差在30HU以内,图像均匀性≤5.0HU,空间分辨力7Lp/cm,低对比度分辨力在对比度为1.0%,0.5%,0.3%时分别≤3.0mm,≤5.0mm,≤6.0mm,达到了规程的要求。CT模拟定位机的图像质量和机械精确程度得到了很好的保障,定位CT的剂量准确,影像参数和位置精确度有规可循。 相似文献
7.
Time-dependent dielectric breakdown (TDDB) has become an important cause of failure for inter-metal dielectrics (IMD) in integrated circuits as feature sizes continue to shrink and novel materials are introduced. Although many studies have been conducted to understand the underlying physics of this issue, not enough work has been focused on evaluating TDDB lifetime of practical chip designs in the physical design stage. This paper proposes a full-chip TDDB failure analysis methodology to evaluate lifetime and identify TDDB hotspots in VLSI layouts, which are essentially interconnect wires that have high failure risk due to TDDB. The proposed method features three new techniques compared to existing methods. First, we have developed a partitioning-based scheme to deal with scaling of full-chip analysis by partitioning the full chip layout into small tiles. Second, for each tile, the new method calculates a newly-introduced TDDB failure metric called TDDB Damage for vulnerable wires. Such a wire-oriented TDDB analysis is the first of its kind and is very amenable for physical design as the wires can be easily adjusted or re-routed for TDDB-aware optimization. Third, the new method considers the impact of the non-uniform electric field calculated using the finite element method (FEM), which significantly improves the accuracy of TDDB risk evaluation. Experimental results show that the proposed new TDDB analysis method is more accurate than a recently proposed full-chip TDDB analysis method in which electrical field is treated as a constant value. Additionally, the proposed method can analyze a practical VLSI layout in a few hours. 相似文献
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9.
大坝服役非概率可靠性分析方法 总被引:4,自引:3,他引:1
针对大坝服役可靠性影响因子具有非概率不确定特征的情况,建立了定量刻画大坝服役可靠性非概率影响因子的Info-gap模型,运用Info-gap决策理论和体积比非概率可靠性度量方法,提出了大坝服役非概率可靠性分析方法,拟定了大坝服役非概率目标可靠度。应用提出的非概率方法分析了某大坝结构服役可靠性,各功能模式可靠性分析结果说明了该方法的工程适用性,同时也验证了所拟定大坝服役非概率目标可靠度的合理性。 相似文献
10.
A Monte Carlo source model using PENELOPE was developed to investigate different tritiated metals in order to design a better radioisotope source for betavoltaic batteries. The source model takes into account the self‐absorption of beta particles in the source which is a major factor for an efficient source design. The average beta energy, beta flux, source power output, and source efficiency were estimated for various source thicknesses. The simulated results for titanium tritide with 0° and 90° angular distributions of beta particles were validated with experimental results. The importance of the backscattering effect due to isotropic particle emission was analyzed. The results showed that the normalized average beta energy increases with the source thickness, and it reaches peak energy depending on the density and the specific activity of the source. The beta flux and power output also increase with increasing source thickness. However, the incremental increase in beta flux and power output becomes minimal for higher thicknesses, as the source efficiency decreases significantly at higher thicknesses due to the self‐absorption effect. Thus, a saturation threshold is reached. A low‐density source material such as beryllium tritide provided a higher power output with higher efficiency. A maximum power output of approximately 4 mW/cm3 was obtained for beryllium tritide with SiC. A form factor approach was used to estimate the optimum source thickness. The optimum source thickness was found near the thickness where the peak beta particle average energy occurs. 相似文献