Radiophotoluminescence phenomenon in copper-doped aluminoborosilicate glass

Radiophotoluminescence phenomena have been widely investigated on various types of materials for dosimetry applications. We report that an aluminoborosilicate glass containing 0.005 mol% copper exhibits intense photoluminescence in the visible region induced by X-ray and γ-ray irradiation. The luminescence is assigned to the 3d⁹4s¹ → 3d¹⁰ transition of Cu⁺. The proportionality of the intensity of the induced photoluminescence to the irradiation dose was confirmed up to 0.5 kGy using ⁶⁰Co γ-ray irradiation. Based on the spectroscopic results, a potential mechanism was proposed for the enhancement of the photoluminescence. The exposure to the ionizing radiation generates electron-hole pairs in the glass, and the electrons are subsequently captured by the Cu²⁺ ions, which are converted to Cu⁺ and emit the luminescence. For the glass containing 0.01 mol% copper, the pronounced enhancement of the photoluminescence was not observed because the reverse reaction, ie, the capture of the holes by the Cu⁺ ions, becomes prominent. The photoluminescence induced by the irradiation was stably observed for the glasses kept at room temperature and even for the glasses heat-treated at 150°C. However, the induced photoluminescence could be eliminated by the heat treatment at a temperature at 500°C, and the glass returned to the initial pre-irradiation state. The Cu-doped aluminoborosilicate glass is a potential candidate for use in dosimetry applications.     

High-resolution long-array thermal ink jet printhead fabricated by anisotropic wet etching and deep Si RIE

This paper describes the fabrication and characterization of a thermal ink jet (TIJ) printhead suitable for high speed and high-quality printing. The printhead has been fabricated by dicing the bonded wafer, which consists of a bubble generating heater plate and a Si channel plate. The Si channel plate consists of an ink chamber and an ink inlet formed by KOH etching, and a nozzle formed by inductively couple plasma reactive ion etching (ICP RIE). The nozzle formed by RIE has squeezed structures, which contribute to high-energy efficiency of drop ejector and, therefore, successful ejection of small ink drop. The nozzle also has a dome-like structure called channel pit, which contributes to high jetting frequency and high-energy efficiency. These two wafers are directly bonded using electrostatic bonding of full-cured polyimide to Si. The adhesive-less bonding provided an ideal shaped small nozzle orifice. Use of the same material (Si substrate) in heater plate and channel plate enables the fabrication of high precision long printhead because no displacement and delamination occur, which are caused by the difference in thermal expansion coefficient between the plates. With these technologies, we have fabricated a 1" long printhead with 832 nozzles having 800 dots per inch (dpi) resolution and a 4 pl. ink drop volume.     

Decentralized adaptive coordinated control of multiple robot arms without using a force sensor

This paper presents a distributed adaptive coordinated control method for multiple robot arms grasping a common object. The cases of rigid contact and rolling contact are analyzed. In the proposed controller, the dynamic parameters of both object and robot arms are estimated adaptively. The desired motions of the robot arms are generated by an estimated object reference model. The control method requires only the measurements of the positions and velocities of the object and robot arms, but not the measurements of forces and moments at contact points. The asymptotic convergence of trajectory is proven by the Lyapunov-like Lemma. Experiments involving two robot arms handling a common object are shown.     

A cathode readout gas sampling calorimeter with conductive plastic tubes

We constructed and tested a prototype gas sampling electromagnetic calorimeter of the Pb-proportional tube sandwich type. The calorimeter uses conductive plastic tubes and cathode pad readout with a tower structure which resulted in reasonable energy and spatial resolutions for electrons in the momentum range 0.5–4.0 GeV/c; $\text{σ}{}_{\mathrm{E}}\text{E =}\text{21\%}\text{(E(}\text{GeV}\text{)}\text{)}{}^{\mathrm{<mtext>1</mtext><mtext>2</mtext>}}\text{, σ}{}_{\mathrm{x}}\text{= 6}\text{mm}\text{(at 3 GeV}$/c). This paper describes the test and the performance studied under various conditions.     

Studies on applications of lypolytic enzymes in detergency II. Evaluation of adaptability of various kinds of lipases in practical laundry conditions

Journal of the American Oil Chemists' Society - Kinetic parameter of hydrolysis, degree of hydrolysis, pH and temperature characteristics and positional specificity of hydrolysis of seven kinds...     

Hepatoblastoma in an adult associated with c-met proto-oncogene imbalance

A rare case of hepatoblastoma in a 61-year-old Japanese housewife is described. This liver tumor mainly consisted of two tissue components: embryonal hepatocytes and primitive mesenchymal tissue. Fetal hepatocytes with alpha-fetoprotein production, gland formation, cartilage and osteoid were also found in a small portion. Molecular analysis by slot blot method revealed increased copy numbers of c-met and K-sam proto-oncogenes and cyclin D1 genes. These findings suggest that alterations of these oncogenes might play a role in the development of adult hepatoblastoma.     

Stress function with finite magnitude of stress concentration around an interface crack

A new mathematical model for study of an interface crack between two dissimilar elastic half planes is proposed. A process zone is formed along the interface between the physical crack and the continuous part. Both the crack opening (and sliding) displacement with a smooth shape and the finite magnitude of stress concentration appear in this zone. The analytical model is expressed by closed elastic solutions using complex variables, but with no oscillations at the crack tip.     

A novel on-chip electrostatic discharge (ESD) protection withcommon discharge line for high-speed CMOS LSIs

A novel on-chip electrostatic discharge (ESD) protection for high-speed CMOS LSI's that operate at higher than 500 MHz has been developed. Introduction of a newly developed common discharge line (CDL) can completely eliminate the protection device influence on the inner circuit operation. This enables minimization of the I/O capacitance by shrinking the dimension of the output transistor, which also serves as a protection device in conventional devices. This new protection (CDL protection) was applied to a high-speed DRAM of which I/O pin capacitance specification is 2 pF. As a result, the ESD tolerance of 4 kV for the charged device model test, 4 kV for the human body model test, and 700 V for the machine model test were obtained. In addition, the DRAM data rate higher than 660 MHz at room temperature was achieved. The results show significant improvement for both ESD and the I/O capacitance, compared with the conventional structure     

Microscopic fatigue processes in a plain-weave glass-fibre composite

This paper focuses on the microscopic damage and progressive failure of a composite reinforced by plain-weave glass cloth under tensile fatigue loading. The fatigue process was divided into three stages like that of multi-directional laminates. It was found that the internal damage at each stage (matrix cracks, debonds in the weft, successive debonds in the warp and ‘metadelaminations’ between warps and wefts) occurred near the cross-over point of the fabric. The modulus decay mechanism was explained by considering the progression of this internal damage. From the end of the first stage to the beginning of the middle stage, a characteristic damage state (CDS) (called a ‘meta-CDS’) was observed. It was found that woven composites have a unit area of damage accumulation (called a ‘unit cell’) and the damage of each unit cell and its distribution control the total fatigue damage of the material.