Room-temperature lasing operation of GaInNAs-GaAssingle-quantum-well laser diodes

We have succeeded in demonstrating continuous-wave (CW) operation of GaInNAs-GaAs single-quantum-well (SQW) laser diodes at room temperature (RT). The threshold current density was about 1.4 kA/cm², and the operating wavelength was approximately 1.18 μm for a broad-stripe geometry. Evenly spaced multiple longitudinal modes were clearly observed in the lasing spectrum. The full-angle-half-power far-field beam divergence measured parallel and perpendicular to the junction plane was 4.5° and 45°, respectively. A high characteristic temperature (T₀) of 126 K under CW operation and a small wavelength shift per ambient temperature change of 0.48 nm/°C under pulsed operation were obtained. These experimental results indicate the applicability of GaInNAs to long-wavelength laser diodes with excellent high-temperature performance     

Optimal growth procedure of GaInP/GaAs heterostructure for high-efficiency solar cells

We have developed an optimal growth procedure for gas-source MBE production of a GaInP/GaAs heterointerface. The interface quality is crucial to obtaining high-performance GaAs solar cells with a GaInP barrier layer because minority carrier lifetime depends strongly on the interface structure. In situ Reflective High-Energy Electron Diffraction (RHEED) observation during the growth across the GaInP/GaAs heterointerface revealed that the phosphorus atoms are replaced by arsenic atoms in the near-interface region of the GaInP layer, and a transient layer acting as a carrier trap is formed. Introduction of a GaP layer into the interface was found to be effective in suppressing carrier loss. From Composition Analysis by Thickness Fringe-Transmission Electron Microscopy (CAT-TEM) images, it was also found that the optimum thickness of inserted GaP to avoid the generation of misfit dislocations is 1 nm.     

1.3-μm continuous-wave lasing operation in GaInNAs quantum-welllasers

A 1.3-μm continuous wave lasing operation is demonstrated, for the first time, in a GaInNAs quantum-well laser at room temperature. This lasing performance is achieved by increasing the nitrogen content (up to 1%) in GaInNAs quantum layer. It is thus confirmed that this type of laser is suitable for use as a light source for optical fiber communications     

12.5-gb/s direct Modulation up to 115/spl deg/C in 1.3-/spl mu/m InGaAlAs-MQW RWG DFB lasers with notch-free grating structure

Direct modulation at 12.5 Gb/s of 1.3-/spl mu/m InGaAlAs distributed feedback (DFB) ridge waveguide (RWG) lasers with low-resistance notch-free gratings running up to 115/spl deg/C is experimentally demonstrated. It was achieved by the combination of the high differential gain of an InGaAlAs MQW active layer, high characteristic temperature of RWG structure, and low-resistance notch-free grating. Moreover, successful transmission of 10-Gb/s modulated signals over 30-km standard single-mode fiber was achieved with the laser running at up to 115/spl deg/C. These results confirm the suitability of this type of laser for use as the cost-effective light source in 12.5-Gb/s and 10-Gb/s datacom applications.     

GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laserdiodes

Vertical-cavity surface-emitting laser diodes with GaInNAs-GaAs quantum-well (QW) active layers are demonstrated for the first time. GaInNAs permits the realization of a long-wavelength vertical-cavity laser grown directly on a GaAs substrate. Room-temperature (RT) pulsed operation is achieved, with an active wavelength near 1.18 μm, threshold current density of 3.1 kA/cm², slope efficiency of ~0.04 W/A, and output power above 5 mW for 45-μm-diameter devices. Laser oscillation is observed for temperatures at high as 95°C     

Measurement of the 77Se(γ, n) cross section and uncertainty evaluation of the 79Se(n, γ) cross section

The ⁷⁷Se (γ, n) cross section was measured for the energy range from 7.6 to 13.8 MeV by using quasi-monochromatic laser-Compton scattering γ-rays. The advanced method to deduce γ-ray strength functions from (γ, n) cross section was developed. By utilizing the method, the γ-ray strength functions of ^{77, 78, 80}Se were deduced so as to reproduce the ^{77, 78, 80}Se (γ, n) cross sections measured in this work and previous systematic measurements. The inverse (n, γ) cross sections for ^{76, 77, 79}Se isotopes were calculated using the statistical model calculation code CCONE with the deduced γ-ray strength functions. The uncertainty of the calculated ⁷⁹Se(n, γ)⁸⁰Se cross section was evaluated by comparing the calculations and the experimental data on ^{76, 77}Se (n, γ) cross sections.     

Hepatocellular carcinoma complicating biliary cirrhosis caused by biliary atresia: report of a case

A case of hepatocellular carcinoma complicating biliary cirrhosis caused by biliary atresia is reported. The patient had persistent severe jaundice with hepatosplenomegaly. A liver tumor was suspected because of the elevated serum alpha-fetoprotein and was shown by ultrasonography at 6 years of age. The tumor was treated with percutaneous ethanol injection therapy (PEIT). Nine months after initiation of PEIT, the patient died of massive bleeding from a metastatic tumor.     

N-Type Doping to an Active-Short Cavity DBR Laser to Expand Its Continuous Tuning Range

We propose the use of a short-cavity distributed Bragg reflector (DBR) laser with a modified active DBR structure, which has an n-type-doped active single quantum well, and that achieves fast wavelength switching that is potentially applicable for optical packet switching networks. The laser exhibits 6.4-nm continuous tuning by moderating a steep gain change at a low DBR injection current. Furthermore, 32-nm continuous tuning has also been achieved for an integrated laser with an eight-channel array.     

Highly reliable 1.3 /spl mu/m InGaAlAs buried-heterostructure laser fabricated with in-situ cleaning

An in-situ-cleaned and regrown 1.3 /spl mu/m InGaAlAs buried-heterostructure laser was fabricated for the first time. The degradation of its driving current was about 1% after a 3000 h aging test. It can thus be concluded from this result that in-situ cleaning is a promising means of fabricating highly reliable, high-performance InGaAlAs BH lasers.     

GaInP single junction and GaInP/GaAs two junction thin-film solar cell structures by epitaxial lift-off

The epitaxial lift-off (ELO) technique was used in forming a thin-film GaInP/GaAs two-junction monolithic tandem solar cell structure. First, the GaInP single junction solar cell to be used in the tandem cell structure as a top cell was thinned by the ELO process. Although the ELO process and the transfer to the quartz substrate caused a strain in the thin-film cell after separation from the GaAs substrate, the photoluminescence peak intensity was not decreased. This shows that defects, such as those causing carrier loss, were not introduced on the thin-film cell during the thinning process. The key issue for thin-film cell fabrication is to avoid damaging the AlInP window layer during the selective etching (HF etchant), by which the thin-film cell is released from the GaAs substrate. A GaInP/GaAs monolithic tandem structure was also thinned by the same process with a GaInP single junction cell. Characteristics of the single-junction GaInP cell and individual cells in the GaInP/GaAs tandem structure were examined. It was found that the spectral response remains almost the same as that for cells with a GaAs substrate, thus confirming the feasibility of using the ELO process to fabricate thin-film GaInP/GaAs cells.