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1.
This paper presents an analysis of Class D inverter when irregular driving patterns are given to the gate drive of the switch devices. The analysis has been carried out with focusing on the waveforms, harmonics, low-frequency components, output power, and equivalent dc resistance, which are numerically analyzed and discussed. Class D inverters with six different Q factors from 0.1 to 20 are analyzed about 2/sup 16/ driving patterns for each Q. Superior four models of the six inverters are built and tested in circuit experiments. The calculated waveforms are compared to the experimental results. Both of them are agreed well in time domain and frequency domain. Analytical results show a possibility of a novel control method with irregular driving patterns. In spite of discontinuous control, the output power or voltage can be strictly changed as if continuous using the selected driving patterns in some ranges.  相似文献   
2.
Using an electromagnetic levitation facility with a laser heating unit, silicon droplets were highly undercooled in the containerless state. The crystal morphologies on the surface of the undercooled droplets during the solidification process and after solidification were recorded live by using a high-speed camera and were observed by scanning electron microscopy. The growth behavior of silicon was found to vary not only with the nucleation undercooling, but also with the time after nucleation. In the earlier stage of solidification, the silicon grew in lateral, intermediary, and continuous modes at low, medium, and high undercoolings, respectively. In the later stage of solidification, the growth of highly undercooled silicon can transform to the lateral mode from the nonlateral one. The transition time of the sample with 320 K of undercooling was about 535 ms after recalescence, which was much later than the time where recalescence was completed.  相似文献   
3.
A mullite (3Al2O3·2SiO2) sample has been levitated and undercooled in an aero-acoustic levitator, so as to investigate the solidification behavior in a containerless condition. Crystal-growth velocities are measured as a function of melt undercoolings, which increase slowly with melt undercoolings up to 380 K and then increase quickly when undercoolings exceed 400 K. In order to elucidate the crystal growth and solidification behavior, the relationship of melt viscosities as a function of melt undercoolings is established on the basis of the fact that molten mullite melts are fragile, from which the atomic diffusivity is calculated via the Einstein-Stokes equation. The interface kinetics is analyzed when considering atomic diffusivities. The crystal-growth velocity vs melt undercooling is calculated based on the classical rate theory. Interestingly, two different microstructures are observed; one exhibits a straight, faceted rod without any branching with melt undercoolings up to 400 K, and the other is a feathery faceted dendrite when undercoolings exceed 400 K. The formation of these morphologies is discussed, taking into account the contributions of constitutional and kinetic undercoolings at different bulk undercoolings.  相似文献   
4.
A modified Monte Carlo (MC) simulation was performed to investigate the hydrogen absorption behavior in Pd and Pd–Ag alloys of the composition PdxAg1−x (x=0.7–0.8) under H2 pressure (0.1 MPa) at different temperatures. The present method employed can consider the dissociative adsorption of hydrogen molecule and the subsequent absorption of hydrogen atom by formalizing the relationship between the pressure of hydrogen molecule and hydrogen atom. The potential parameters were determined to reproduce the solution enthalpy of hydrogen in pure metals. The results are in good agreement with experimental findings as well as previous theoretical studies. We confirmed that our method is useful to simulate the absorption of hydrogen in metals and alloys.  相似文献   
5.
BACKGROUND: Halo congenital nevus is a condition in which halo formation is associated with congenital nevocellular nevi. Although several theories have been proposed, the immunologic mechanisms of halo formation and concomitant nevus regression still remain unclear. We presented immunologic findings in a case of halo congenital nevus with unique histologic location of inflammatory cells. OBSERVATIONS: Histologically, the present case of halo congenital nevus undergoing spontaneous regression showed a marked inflammatory infiltrate with remnants of original nevus cell nests. In the infiltrating T cells, CD8+ cells outnumbered CD4+ cells and the infiltrate of natural killer cells was not substantial. Direct and indirect immunofluorescence studies demonstrated the presence of IgM antibodies against nevus cells as well as melanoma cells and cultured melanocytes in the patient's serum. CONCLUSIONS: Our findings suggest that both T-cell-mediated immunity and IgM antibodies may be involved in the regression of halo congenital nevus. However, it is important to point out that our results may simply be epiphenomena and not directly responsible for the destruction of nevus cells.  相似文献   
6.
Two cases with osteolytic bone metastases from cervical cancer and esophageal cancer treated by local therapy were reported. The first case is a 53-year-old female with bone metastases of left ischium developed 1 year after hysterectomy. She was treated by intratumor injection of sizofiran (SPG) 20 mg/w and radiation therapy. After 4 weeks, ischias pain decreased and bone lesion showed remarkable calcification (PR) 8th months later. The second case is a 58-year-old male with bone metastases of the left tibia and fibula developed 1 year after surgery. He was treated by intratumor injection of SPG 20 mg/w x 4 and OK-432 1.0 KE/w x 8 after radiation therapy. After 4 weeks, pain and swelling of left leg decreased and bone lesions showed remarkable calcification (PR) three months later. We suggest that intratumor injection of SPG and OK-432 with radiation therapy was effective for osteolytic bone metastases.  相似文献   
7.
We investigated the interleukin-8 (IL-8)-producing activity of influenza A NWS virus in cultured rat kidney NRK-52E cells and a rat influenza model. The production of rat IL-8 increased significantly in the virus-infected cells but not in UV-inactivated virus- or split-product-treated cells. The increase in IL-8 production could be detected in the bronchoalveolar lavage of infected rats. These data suggest that infectious virus has the potential to accelerate the production of IL-8 in cultured cells and in vivo in airway-lining cells.  相似文献   
8.
Ti wire electrodes were immersed in acidic solutions containing H2SO4 and HCl of various concentrations at 353 K to evaluate corrosion rate by measurement of electric resistance change (resistometry). Addition of hydrochloric acid to sulphuric acid solution promoted depassivation of Ti. After depassivation, the immersion potential dropped to the hydrogen evolution potential and a hydride layer was formed on the surface. The hydride layer dissolved continuously in the acidic solution. SEM observation showed that Ti wires dissolved almost uniformly in the early stage and that the dissolution then trace became irregular due to nonuniform growth of the hydride layer. Dissolution rate of a Ti wire was estimated almost accurately by resistometry.  相似文献   
9.
The soliton self-frequency shift (SSFS) in orthogonally polarised femtosecond soliton pulses is reported for the first time. It is shown that SSFS for orthogonally polarised solitons is approximately 1/3 of that for parallel polarised solitons. This is attributed to the orthogonal Raman term. The 2π and π dependences of the SSFS on the phase difference between the two solitons are newly obtained for parallel and orthogonal polarisations, respectively. The largest SSFS occurs in-phase under parallel polarisation  相似文献   
10.
Room-temperature pulsed operation of a GaInAsP/InP vertical-cavity surface-emitting laser diode (VCSELD) with an emission wavelength near 1.55 μm is reported. A double heterostructure with a 34-pair GaInAsP (λg=1.4 μm)/InP distributed Bragg reflector (DBR) was grown by metalorganic chemical vapor deposition (MOCVD). The measured reflectivity of the semiconductor DBR is over 97% and threshold current is 260 mA for a 40-μmφ device with a 0.88-μm-thick active layer. Threshold current density is as low as 21 kA/cm2 at room temperature  相似文献   
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