用于千兆以太网基带铜缆接收器均衡的甚高频自适应 连续时间Gm-C 二阶带通滤波器的研究和设计

本文设计了用于千兆以太网基带铜缆接收器均衡的甚高频自适应连续时间Gm-C二阶带通滤波器。基于最陡梯度下降算法，带通滤波器的零点在57－340MHz的频率范围内可以自适应地调节，中心频率为1.278GHz。通过外接电阻伺服环路，滤波器中跨导转换器的跨导值不受工艺偏差和温度变化的影响，采用CSMC－HJ0.6μm CMOS工艺器件模型，用Cadence Spectres仿真器仿真了设计的自适应滤波器电路，仿真结果验证了设计原理和设计的电路。系统的最长学习时间为880个参考时钟周期。     

Alkali-metal Na Adsorption and Promoted Oxidation on Si(100)2×1 Surface

The alkali-metal Na adsorption on Si(100)2×1 surface and its promoted oxidation and Si oxidegrowth have been investigated by means of thermal desorption,work function,Auger electronspectroscopy and photoemission electron spectroscopy.The experimental data showed that therewas a new state,interface electron state,near the Fermi level after the deposition of Na atoms.It wasfound that the presence of Na always caused an increase of the oxygen initial uptake whereas thepromotion of Si oxide growth was observed only at the coverage of Na greater than 0.5 ML.A newmechanism of Na-promoted Si oxide growth is suggested in this paper.     

基于AlAs氧化法研制的垂直腔面发射激光器

结合垂直腔面发射激光器的制备,研究了AlAs选择性氧化工艺中氧化炉温、氮气流量、水温等条件和AlAs层的横向氧化速率之间的关系,并得到了可精确控制氧化过程的工艺条件,在优化的工艺条件下运用湿氮氧化制备出InGaAs/GaAs垂直腔面发射激光器,实现了器件的室温脉冲激射.     

The hemostatic system function of patients with severe forms of diphtheria

Hemostasis of 100 patients with severe diphtheria infection was studied throughout the disease. The patients were found to have marked procoagulant, anticoagulant and fibrinolytic disorders. Antithrombogenic activity of the vascular wall was also abnormal. The above impairments correlated with the symptoms severity and are interpreted as DIC syndrome which ran subclinically or as hemorrhagic syndrome. The majority of the patients underwent a hyperhypocoagulant phase of DIC syndrome.     

Effect of freezing rate on the denaturation of myofibrillar proteins

Freezing of bovine muscle has a denaturating effect on myofibrillar proteins, Differ-ential Scanning Calorimetry (DSC) studies of fresh and frozen muscle at different freezing rates show a decrease on denaturation enthalpies; the lower the freezing rate the greater the loss. When measuring the specific areas (ratio between each partial area in cm', and the dry weight of the sample, in mg) of the DSC thermograms, it can be observed that the area ascribed to myosin decreases with freezing, while the area corresponding to actin is not affected. These results are in agreement with the ATPase activity decreases as a consequence of freezing observing higher losses at lower freezing rates. The denaturation observed could be a result of a partial unfolding of the myosin head being more pronounced at low freezing rate.     

Nitridation Kinetics of Silicon Monocrystal and Morphology of Nitride Film

Basing on TGA (thermal gravimetric analysis) of thermal nitridation at l200, l250, l300℃, respectively,analysis of high temperature kinetics for nitridation of silicon monocrystal has been carried out. According tothe theory for kinetics of reaction of vapour with solid phase a nitridation kinetic model, from which it can beshown thal the rate of nitridation reaction of silicon crystal should be controlled by three stage limiting factors,was proposed. These limiting factors are chemical reaction, chemical reaction mixed with diffusion and diffu-sion. Using this model to treat our experimental data, satisfactory correlation coefficient and apparentactivation energy of nitridation of p-type (lll) silicon crystal have been obtained. The nitride film was identi'fied to be a-Si_3N_4 (Hexagonal, a=0.7758nm,c_o=0.5623nm) by X-ray diffraction analysis. Morphology ofthe nitride films formed in different nitridation duration was observed in both planar andcross-sectional viewsby SEM (scanning electron microscope).     

0412-1961

TAN Yanchang; HE Bin; ZHAO Yuhua (Northeast Institute of Technology, Shenyang)     

Polycrystalline diamond MESFETs by Au-mask technology for RF applications

Metal-semiconductor field effect transistors (MESFETs) were fabricated on H-terminated polycrystalline diamond.The DC characteristics of the p-channel MESFET showed a maximum drain current density of 204 mA/mm at a gate-source voltage of 6 V,and a maximum transconductance of 20 mS/mm at a gate-source voltage of 1.5 V.The small signal S-parameters of MESFET with 2 100 m gate width and 2 m gate length were measured.An extrinsic cut-off frequency (fT) of 1.7 GHz and the maximum oscillation frequency (fmax) of 2.5 GHz were obtained,which was the first report on diamond MESFETs with RF characteristics in China.