Monte Carlo Simulations of High-Performance Implant Free In0.3Ga 0.7As Nano-MOSFETs for Low-Power CMOS Applications

The potential performance of implant free heterostructure In_0.3Ga_0.7As channel MOSFETs with gate lengths of 30, 20, and 15 nm is investigated using state-of-the-art Monte Carlo (MC) device simulations. The simulations are carefully calibrated against the electron mobility and sheet density measured on fabricated III-V MOSFET structures with a high-kappa dielectric. The MC simulations show that the 30 nm gate length implant free MOSFET can deliver a drive current of 2174 muA/mum at 0.7 V supply voltage. The drive current increases to 2542 muA/mum in the 20 nm gate length device, saturating at 2535 muA/mum in the 15 nm gate length one. When quantum confinement corrections are included into MC simulations, they have a negligible effect on the drive current in the 30 and 20 nm gate length transistors but lower the 15 nm gate length device drive current at 0.7 V supply voltage by 10%. When compared to equivalent Si based MOSFETs, the implant free heterostructure MOSFETs can deliver a very high performance at low supply voltage, making them suitable for low-power high-performance CMOS applications     

Sekundärneutralteilchen‐Massenspektrometrie (SNMS)

Secondary Neutral Mass Spectrometry (SNMS) for characterization of powder and particles. Due to its quantitative character and the attainable high depth resolution in particular Secondary Neutral Mass Spectrometry (SNMS) is an appropriate technique for the characterization of powder, dust and particle carrying sample surfaces. The basic principles and the figures of merit are elucidated and selected examples are chosen to demonstrate the application of the method in the field of particle analysis. Although plasma based SNMS does not provide any lateral resolution for the investigation of single particles it is shown that the excellent depth resolution of the method enables the quantitative characterization of even nanoscale particles.     

Insulator passivation of In0.2Ga0.8As-GaAssurface quantum wells

The electronic passivation of (100) In_0.2Ga_0.8 As-GaAs surface quantum wells (QWs) using in situ deposition of an amorphous, insulating Ga₂O₃ film has been investigated and compared to standard Al_0.45Ga_0.55As passivation. Nonradiative lifetimes τ_r=1.1±0.2 and 1.2±0.2 ns have been inferred from the dependence of the internal quantum efficiency η on optical excitation density P₀' for the Ga₂O₃ and Al_0.45Ga_0.55As passivated In_0.02 Ga_0.8As-GaAs surface QW, respectively. Beyond identical internal quantum efficiency, the amorphous Ga₂O₃ insulator passivation simplifies device processing, eludes problems arising from lattice-mismatched interfaces, and virtually eliminates band bending in electronic and optoelectronic devices based on a low dimensional system such as quantum wells, wires, and dots     

Effect of interface state trap density on the characteristics of n-type,enhancement-mode,implant-free In0.3Ga0.7As MOSFETs

The effect of interface state trap density, D_it, on the device characteristics of n-type, enhancement-mode, implant-free (IF) In_0.3Ga_0.7As MOSFETs [1], [2] has been investigated using a commercial drift-diffusion (DD) device simulation tool. Methodology has been developed to include arbitrary D_it distributions in the input simulation decks to more accurately fit the measured subthreshold characteristics of recently reported 1.0 μm gate length IF In_0.3Ga_0.7As MOSFETs [3]. The impact of interface states on a scaled 30 nm gate length IF MOSFET is also reported.     

Micro–macro characterisation of DGEBA-based epoxies as a preliminary to polymer interphase modelling

Reactive polymer adhesives in contact to substrates are known to form so-called interphases, a notion comprising the domain within which the polymer, compared to its bulk, exhibits structural inhomogeneities and gradients in material properties. Induced by the interface between substrate and polymer the formation of such interphases is usually ascribed to processes like segregation or phase separation of polymer components, selective adsorption, steric hindrance, orientation effects or curing shrinkage. Quantitative information on mechanical interphase properties is obtainable only by considerable efforts since interphases belong to the class of buried layers, i.e. they are located between bulk polymer and substrate, which impedes a majority of experimental techniques.Within this contribution, a two-component epoxy-based model polymer (DGEBA/DETA) is examined by methods on different scales and with respect to the effects that both the resin/hardener mixing ratio and the chemical structure of the hardener exert on the mechanical bulk properties. By means of these variations the above mentioned processes disturbing the polymer network formation in the vicinity of the substrate are emulated within the bulk. Macroscopic tension tests, nanoindentation and calorimetric methods (DSC) are applied to obtain relations between structural variations and material behaviour. Inversely identifying the governing parameters of suitable constitutive laws from experimental data will later conclude the first step towards a quantitative interphase model.It is demonstrated that modifications of the resin/hardener mixing ratio and the hardener formulation lead to variations in mechanical bulk properties which are quantitatively determinable by methods on different scales and do lie in ranges similar to those of property profiles that have been observed within interphases.In future work, the local mechanical behaviour of adhesive joints under load will then be investigated by a microscale videoextensometry. The resulting data will be compared to the structure–property relations from step one to conclude on the local polymer structure within the interphase.     

Infrared microscopy studies on high-power InGaAs-GaAs-InGaP laserswith Ga2O3 facet coatings

InGaAs-GaAs separate confinement, heterostructure single quantum-well (SCH-SQW) lasers (λ=0.98 μm) with lattice-matched InGaP cladding layers, using a new Ga₂O₃ low reflectivity (LR) front-facet coating, are reported. The CW peak power density (17 MW/cm²) of 6 μm×750 μm ridge-waveguide lasers is limited by thermal rollover, and repeated cycling beyond thermal rollover produced no change in operating characteristics. The high-power temperature distribution along the active stripe has been measured by high-resolution infrared (3-5 μm) imaging microscopy. The temperature profile acquired for a very high optical power density P_D=11 MW/cm³ was found to be uniform along the inner active laser stripe, and revealed a local temperature increase at the LR front facet ΔT_f of only 9 K above the average stripe temperature ΔT_s=24 K. An excellent front-facet interface recombination velocity <10⁵ cm/s has been inferred from the measured low local temperature rise in the front facet     

Comments on “High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm”

We have a number of issues with the above paper ldquoHigh Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Current Exceeding 1 A/mm,rdquo by Y. Xuan, Y. Q. Wu, and P. D. Ye, published IEEE Electron Device Letters in April 2008 which we wish to highlight.     

Enhancement-Mode GaAs n-Channel MOSFET

This letter introduces the first enhancement-mode GaAs n-channel MOSFETs with a high channel mobility and an unpinned Fermi level at the oxide/GaAs interface. The NMOSFETs feature an In_0.3Ga_0.7 As channel layer, a channel mobility of up to 6207 cm²/Vmiddots, and a dielectric stack thickness of 13.1-18.7 nm. Enhancement-mode NMOSFETs with a gate length of 1 mum, a source/drain spacing of 3 mum, and a threshold voltage of 0.05 V show a saturation current, transconductance, on-resistance, and subthreshold swing of 243 mA/mm, 81 mS/mm, 8.0 Omegamiddotmm, and 162 mV/dec, respectively     

Experimental observation of velocity overshoot in n-channelAlGaAs/InGaAs/GaAs enhancement mode MODFETs

Velocity overshoot phenomena in n-channel Al-GaAs/InGaAs/GaAs enhancement mode MODFETs have been investigated for gate lengths ranging from 1 to 0.5 μm. The study is based on Motorola's established CGaAs ^TM technology. The observed average electron velocity υ _aυ under the gate is 1.05, 1.34, 1.48, and 1.71×10 ⁷ cm/s for a gate length L_G of 1, 0.7, 0.6, and 0.5 μm, respectively. The presence of velocity overshoot in InGaAs channels is clearly proven with average electron velocities exceeding the steady-state saturation velocity of ≅1×10⁷ cm/s for L_G⩽0.7 μm, and with the significant increase of υ_aυ with shorter gate length     

Implant-free high-mobility flatband MOSFET: principles of operation

Principles of operation of implant-free enhancement-mode MOSFETs (flatband MOSFET) are discussed. Epitaxial-layer structures designed for use in implant-free enhancement-mode devices and employing a high-/spl kappa/ dielectric (/spl kappa//spl cong/20) and a strained InGaAs channel layer with a thickness of 10 nm have been manufactured on GaAs substrate. Proceeding from measured electron mobility /spl mu/ as a function of the sheet-carrier concentration, enhancement-mode design considerations, saturation current I/sub Dss/, and mobility requirements are discussed using two-dimensional device simulations. For the flatband MOSFET to compete successfully with other device designs, certain minimum channel mobilities are required. For RF applications, /spl mu/ should exceed 5000 cm/sup 2//Vs while high-performance MOSFETs for digital applications may require even higher mobility for optimum operation. Finally, measured data of first 1-/spl mu/m-GaAs-flatband enhancement-mode MOSFETs are presented; the saturation velocity of the InGaAs channel layer is derived; and measured I/sub Dss/ data are compared to the results obtained by simulations.