10Gbit/s甚短距离传输系统接收模块研究

本文研究了符合OIF—VSR4—01．0规范的甚短距离（VSR）并行光传输系统转换器集成电路，实现了接收部分转换器集成电路中帧同步、8B／10B解码、12路通道去斜移、检错纠错等模块的设计。在Altera的Stratix GX系列的FPGA上实现了接收部分转换器集成电路。仿真分析的结果表明所设计的各个模块能正确的实现接收部分转换器集成电路的功能，给出了仿真结果。     

A low-noise fully-differential CMOS preamplifier for neural recording applications

A fully-differential bandpass CMOS preamplifier for extracellular neural recording is presented in this paper.The capacitive-coupled and capacitive-feedback topology is adopted.We describe the main noise sources of the proposed preamplifier and discuss the methods for achieving the lowest input-referred noise.The preamplifier has a midband gain of 43 dB and a DC gain of 0.The-3 dB upper cut-off frequency of the preamplifier is 6.8 kHz.The lower cut-off frequency can be adjusted for amplifying the field or action potentials located in different bands.It has an input-referred noise of 3.36 μVrms integrated from 1 Hz to 6.8 kHz for recording the local field potentials(LFPs)and the mixed neural spikes with a power dissipation of 24.75 μW from 3.3 V supply.When the passband is configured as 100 Hz-6.8 kHz for only recording spikes,the noise is measured to be 3.01 μVrms.The 0.115 mm2 prototype chip is designed and fabricated in 0.35-μm N-well CMOS(complementary metal oxide semiconductor)2P4M process.     

Multi-channel micro neural probe fabricated with SOI

Silicon-on-insulator(SOI) substrate is widely used in micro-electro-mechanical systems(MEMS).With the buried oxide layer of SOI acting as an etching stop,silicon based micro neural probe can be fabri-cated with improved uniformity and manufacturability.A seven-record-site neural probe was formed by inductive-coupled plasma(ICP) dry etching of an SOI substrate.The thickness of the probe is 15 μm.The shaft of the probe has dimensions of 3 mm×100 μm×15 μm with typical area of the record site of 78.5 μm2.The im...     

Fabrication of iridium oxide neural electrodes at the wafer level

Electro-deposition, electrical activation, thermal oxidation, and reactive ion sputtering are the four primary methods to fabricate iridium oxide film. Among these methods, reactive ion sputtering is a commonly used method in standard micro-fabrication processes. In different sputtering conditions, the component, texture, and electrochemistry character of iridium oxide varies considerably. To fabricate the iridium oxide film compatible with the wafer-level processing of neural electrodes, the quality of iridium oxide film must be able to withstand the mechanical and chemical impact of post-processing, and simultaneously achieve good performance as a neural electrode. In this study, parameters of sputtering were researched and developed to achieve a balance between mechanical stability and good electrochemical characteristics of iridium oxide film on electrode. Iridium oxide fabricating process combined with fabrication flow of silicon electrodes, at wafer-level, is introduced to produce silicon based planar iridium oxide neural electrodes. Compared with bare gold electrodes, iridium oxide electrodes fabricated with this method exhibit particularly good electrochemical stability, low impedance of 386 kΩ at 1 kHz, high safe charge storage capacity of 3.2 mC/cm², and good impedance consistency of less than 25% fluctuation.     

Effect of fabrication temperature on the manufacturability of lateral ZnO nanowire array UV sensor

Science China Technological Sciences - Fabrication temperature is an important factor affecting the manufacturability of electronic devices, especially for the bottom-up self-assembled nano-device....     

高速卷绕头网络控制系统的设计与实现

主控机、工控机、可编程逻辑控制器(PLC)和变频器(FC)构成的网络控制系统中，利用RS-232与RS-485接口实现主控机、工控机、可编程逻辑控制器和变频器之间的通信，具有成本低，易于实现多机联网控制．抗干扰能力强等优点。本文主要介绍了RS-232接口通信系统的设计方法与实现。     

A composite insulation structure for silicon-based planar neuroprobes

Silicon-based planar neuroprobes are composed of silicon substrate,conducting layer,and insulation layers of SiO 2 or SiN membrane.The insulation layer is very important because it affects many key parameters of neuprobes,like impedance,SNR(signal noise ratio),reliability,etc.Monolayer membrane of SiO 2 or SiN are not good choices for insulation layer,since defects and residual stress in these layers can induce bad passivation.In this paper a composite insulation structure is studied,with thermal SiO 2 as the lower insulation layer and with multilayer membrane composed of PECVD SiO 2 and SiN as the upper insulation layer.This structure not only solves the problem of residual stress but also ensures a good probe passivation.So it’s a good choice for insulation layer of neuroprobes.