Effects of SO2 on selective catalytic reduction of NO with NH3 over a TiO2 photocatalyst

The effect of SO₂ gas was investigated on the activity of the photo-assisted selective catalytic reduction of nitrogen monoxide (NO) with ammonia (NH₃) over a TiO₂ photocatalyst in the presence of excess oxygen (photo-SCR). The introduction of SO₂ (300 ppm) greatly decreased the activity of the photo-SCR at 373 K. The increment of the reaction temperature enhanced the resistance to SO₂ gas, and at 553 K the conversion of NO was stable for at least 300 min of the reaction. X-ray diffraction, FTIR spectroscopy, thermogravimetry and differential thermal analysis, x-ray photoelectron spectroscopy (XPS), elemental analysis and N₂ adsorption measurement revealed that the ammonium sulfate species were generated after the reaction. There was a strong negative correlation between the deposition amount of the ammonium sulfate species and the specific surface area. Based on the above relationship, we concluded that the deposition of the ammonium sulfate species decreased the specific surface area by plugging the pore structure of the catalyst, and the decrease of the specific surface area resulted in the deactivation of the catalyst.     

Characterization and electrochemical properties of CF4 plasma-treated boron-doped diamond surfaces

The effect of CF₄ plasma etching on diamond surfaces, with respect to treatment time, was investigated using scanning electron microscopy (SEM), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and electrochemical measurements. SEM observations and Raman spectra indicated an increase in surface roughening on a scale of 10–20 nm, and an increase in crystal defect density was apparent with treatment time in the range of 10 s to 30 min. In contrast, alteration of the diamond surface terminations from oxygen to fluorine was found to be rather rapid, with saturation of the F/C atomic ratio estimated from XPS analysis after treatment durations of 1 min and more. The redox kinetics of Fe(CN)₆^3−/4− was also found to be significantly modified after 10 s of CF₄ plasma treatment. This behavior shows that C–F terminations predominantly affect the redox kinetics compared to the effect on the surface roughness and crystal defects. The double-layer capacitance (C_dl) of the electrolyte/CF₄ plasma-treated boron-doped diamond interface was found to show a minimum value at 1 min of treatment. These results indicate that a short-duration CF₄ plasma treatment is effective for the fabrication of fluorine-terminated diamond surfaces without undesirable surface damage.     

Growth of Potassium Titanate Fibers in Flowing N2 Gas

The length of potassium titanate fibers produced by several conventional methods averages 50 μm, with a maximum of 100 μm. Extremely long fibers (most >1000 μm long) were obtained by calcination in N₂ gas flowing at 5.2×10^-4 m/s.     

Improved direct bonding method of Nd:YVO4 and YVO4 laser crystals

We succeeded in the fabrication of bonded laser crystals composed of a neodymium-doped YVO₄ laser crystal (Nd:YVO₄) and its host crystals YVO₄ by a newly developed dry etching technique using an argon ion beam. The optical distortion caused by the bonded interface of size 5 mm × 6 mm was estimated to be 0.05λ at 633 nm. From the comparison of laser performance pumped by a laser diode, the bonded crystals could increase the laser output power by nearly twice that of the non-bonded crystals with the same degree of polarization of 99.2%. To analyze the mechanism of the enhanced reduction of the thermal load in the bonded crystals, numerical simulations with a finite-element method were also performed.     

High-efficiency finishing process for metal mold by large-area electron beam irradiation

A new finishing process for metal molds by large-area electron beam (EB) irradiation is proposed in this study. In the large-area EB irradiation equipment used here, an EB with high-energy density is irradiated without focusing the beam, and so the EB with a maximum diameter of 60 mm can be used for melting or evaporating metal surface instantly. Experimental results show that the surface roughness decreases from 6 μmRz to less than 1 μmRz in just a few minutes under proper machining conditions. The corrosion resistance of metal mold surface also could be greatly improved by large-area EB irradiation. Furthermore, the surface roughness of tilting surface close to 90° could be well improved. Therefore, large-area EB irradiation method has a possibility to become a high-efficiency finishing process for metal molds.     

A numerical study of radiation heat transfer in sodium pool combustion and response surface modeling of luminous flame emissivity

A response surface model of the luminous flame emissivity of sodium pool fire has been proposed for use in safety analysis computer codes of a liquid metal fast reactor. The liquid sodium burns in air resulting in not only heat generation but also release of sodium oxide aerosols of sub-micron diameters. Aerosols levitating in air are radiative and they influence the allocation of combustion heat from the flame to atmospheric gas or sodium pool. The emissivity of the flame needs to be quantified, as it is one of user-specified parameters of the computer codes for the sodium fire analysis. The response surface model of the flame emissivity is developed based on numerical experiments on the physics of mass and heat transfer and behavior of the aerosol. Thermal-hydraulic equations have been solved coupled with aerosol dynamics and chemical reaction. Three influential variables on the emissivity are identified as pool temperature, gas temperature and oxygen molar fraction in the air. It has been found that the emissivity is calculated reasonably as a function of the three variables. The proposed response surface model can be easily employed in the sodium fire analysis codes because it is a simple quadratic expression. For the safety evaluation of the sodium fire, combined use is recommended of the proposed model and the lumped-mass zone model code.     

Monte Carlo simulation of hydrogen absorption in palladium and palladium–silver alloys

A modified Monte Carlo (MC) simulation was performed to investigate the hydrogen absorption behavior in Pd and Pd–Ag alloys of the composition Pd_xAg_1−x (x=0.7–0.8) under H₂ pressure (0.1 MPa) at different temperatures. The present method employed can consider the dissociative adsorption of hydrogen molecule and the subsequent absorption of hydrogen atom by formalizing the relationship between the pressure of hydrogen molecule and hydrogen atom. The potential parameters were determined to reproduce the solution enthalpy of hydrogen in pure metals. The results are in good agreement with experimental findings as well as previous theoretical studies. We confirmed that our method is useful to simulate the absorption of hydrogen in metals and alloys.     

Silica removal from Mokai, New Zealand, geothermal brine by treatment with lime and a cationic precipitant

Preliminary experiments using two chemicals (CaO, a quicklime, and a cationic nitrogen-bearing precipitant, EC-004) to remove silica from geothermal brine were undertaken at the Mokai geothermal plant, New Zealand. The brine was mixed with the reagent (CaO or EC-004). The reaction was studied from the start of the experiment (NRT, 0 min, no retaining time) and after 15 min (15RT) at 90 °C. The concentration of silica in the brine was initially 954 mg/l, and decreased linearly with increasing reagent concentration. When CaO is added, the silica concentration at 15RT was 200 mg/l lower than at NRT and became almost zero on addition of 1.5 g/l. In contrast, when EC-004 is added, the total silica concentration nearly reaches the solubility of amorphous silica at 90 °C. In order to prevent silica scaling in Mokai brines cooled to 90 °C, the CaO and EC-004 added should be individually adjusted to 0.5 g/l and 80 mg/l, respectively.     

Intussusception caused by a carcinoma of the cecum during pregnancy: report of a case and review of the literature

Respiratory infections are the most common infection in children. They differ remarkably according to age, bacteria and viruses. Therefore a careful history of outbreak, age, former infections, involvement of surroundings, symptoms, etc are essential. The present study included 50 children, aged between 0.3 and 12 yrs, all treated ambulatorily. 21 received brodimoprim (B) and 29 erythromycin (E). Indications were: tonsillitis, bronchitis, otitis media, sinusitis and scarlet fever. Dosages were: B was given 10 mg/kg body weight (b.w.) initially followed by 5 mg/kg b.w., once-a-day. The duration of treatment varied between 4 and 14 days (mean 8.3 days). E was given 30.50 mg/kg b.w. 3 times per day; duration 4 to 14 days (mean 8.6 days). Overall results were: in group B:12 cures, 5 improvements, 3 failures; 1 not assessable. In group E: 20 cures, 8 improvements, 1 failure. Side effects: in group B: vomiting (1), skin reaction (2), discontinuation (2); in group E: skin reaction (1), diarrhea (5), diarrhea+vomiting (1); discontinuation (2). The differences in efficacy and tolerability in the two groups are not statistically significant. The improved compliance with a single versus t.i.d. dosages has to be taken into account.     

Formation of low-resistivity poly-Si and SiNx films by Cat-CVD for ULSI application

In this paper, bulk-Si metal–oxide–semiconductor field effect transistors (MOSFETs) are fabricated using the catalytic chemical vapor deposition (Cat-CVD) method as an alternative technology to the conventional high-temperature thermal chemical vapor deposition. Particularly, formation of low-resistivity phosphorus (P)-doped poly-Si films is attempted by using Cat-CVD-deposited amorphous silicon (a-Si) films and successive rapid thermal annealing (RTA) of them. Even after RTA processes, neither peeling nor bubbling are observed, since hydrogen contents in Cat-CVD a-Si films can be as low as 1.1%. Both the crystallization and low resistivity of 0.004 Ω·cm are realized by RTA at 1000 °C for only 5 s. It is also revealed that Cat-CVD SiN_x films prepared at 250 °C show excellent oxidation resistance, when the thickness of films is larger than approximately 10 nm for wet O₂ oxidation at 1100 °C. It is found that the thickness required to stop oxygen penetration is equivalent to that for thermal CVD SiN_x prepared at 750 °C. Finally, complementary MOSFETs (CMOSs) of single-crystalline Si were fabricated by using Cat-CVD poly-Si for gate electrodes and SiN_x films for masks of local oxidation of silicon (LOCOS). At 3.3 V operation, less than 1.0 pA μm⁻¹ of OFF leakage current and ON/OFF ratio of 10⁷–10⁸ are realized, i.e. the devices can operate similarly to conventional thermal CVD process.