Elaboration and characterization of a KCl single crystal doped with nanocrystalsof a Sb2O3 semiconductor

Undoped and doped KCl single crystals have been successfully elaborated via the Czochralski（Cz） method.The effects of dopant Sb₂O₃ nanocrystals on structural and optical properties were investigated by a number of techniques,including X-ray diffraction（XRD）,scanning electron microscopy（SEM）,energy dispersive X-ray（EDAX） analysis,UV-visible and photoluminescence（PL） spectrophotometers.An XRD pattern of KCl:Sb₂O₃ reveals that the Sb₂O₃ nanocrystals are in the well-crystalline orthorhombic phase.The broadening of diffraction peaks indicated the presence of a Sb₂O₃ semiconductor in the nanometer size regime.The shift of absorption and PL peaks is observed near 334 nm and 360 nm respectively due to the quantum confinement effect in Sb₂O₃ nanocrystals.Particle sizes calculated from XRD studies agree fairly well with those estimated from optical studies.An SEM image of the surface KCl:Sb₂O₃ single crystal shows large quasi-spherical of Sb₂O₃ crystallites scattered on the surface.The elemental analysis from EDAX demonstrates that the KCl:Sb₂O₃ single crystal is slightly rich in oxygen and a source of excessive quantities of oxygen is discussed.     

Behavior Study of the Nanostructured Zn1-xCdxO (0 ≤ x ≤ 0.1) Semiconductor Thin Films Deposited onto Silicon Substrate by Dip-Coating Method

Silicon - The specimens of nanostructured semiconductor of Zn1-xCdxO (0 ≤ x ≤ 0.1) thin films were grown on silicon substrate using a dip-coating method. The...     

Study of Undoped and Indium Doped ZnO Thin Films Deposited by Sol Gel Method

Silicon - In this paper, we report the effects of Indium doping concentrations (from 0 to 10wt%) on the structural, morphological, and optical properties of deposited In doped ZnO (IZO) thin films...     

Influence of Low Cd-Doping Concentration (0.5 and 3 wt.%) and Different Substrate Types (Glass and Silicon) on the Properties of Dip-Coated Nanostructured ZnO Semiconductors Thin Films

Journal of Inorganic and Organometallic Polymers and Materials - The investigation of semiconductor films of undoped ZnO and doped with two weight percentages of Cadmium (0.5 and 3) were grown on...     

Structural,Electrical and Optical Properties of PVC/ZnTe Nanocomposite Thin Films

Journal of Inorganic and Organometallic Polymers and Materials - ZnTe nanoparticles (NPs) were synthesized using hydrothermal method and then were dispersed in poly(vinyl-chloride) (PVC) to prepare...     

Characterization of CdS nanocrystals embedded in KCl single crystal matrix grown by Czochralski method

The growth of CdS nanocrystals (NCs) embedded in bulk KCl single crystal matrix is performed using the Czochralski method. The X-ray diffraction reveals the incorporation of the CdS NCs with a cubic structure inside the KCl matrix. The optical density measurements of the CdS NCs embedded in KCl single crystal show a shift of the absorption edge towards higher energies. The optical band-gap is estimated to be about of 2.60 eV. The photoluminescence (PL) spectrum of the studied samples presents four emission bands in the range of 2.20–2.56 eV.     

Fabrication and Characterization of Pure and Pb-doped ZnO Thin Films Prepared by Sol–Gel and Dip-coeting Method

In this paper, undoped and Pb-doped ZnO thin films have been prepared by sol gel method and deposited on glass substrate using dip-coating technique. The structural, morphological, and optical properties of the films were investigated as a function of Pb doping. The results of the structural tests showed that these films are of a polycrystalline hexagonal structure with a preferred orientation in the (002) direction. The grain size values of Pb-doped films were lower than that of pure ZnO, but the strain and the dislocation density values inecrease with increase Pb doping ratio. The atomic force microscopy (AFM) images showed that the particle size and Root Mean Square (RMS) of ZnO decrease with increasing Pb doping. The optical band gap values were found to increase from (3.19 to 3.30 eV) and the Urbach energy decrease from (322 to 313 meV). PL spectra exhibit an increased amount of defects with increasing Pb, which leads to a red shift in the UV region.