EC Analysis of Multi-Antenna System over 5G and Beyond Networks and its Application to IRS-Assisted Wireless Systems

Wireless Personal Communications - Recently, the theory of effective rate has attracted much attention, since it can take the delay aspect into account when performing channel capacity analysis. In...     

Domain Adaptation for POS Tagging with Contrastive Monotonic Chunk-wise Attention

Neural Processing Letters - Part of Speech (POS) tagging is a sequential labelling task and one of the core applications of Natural Language Processing. It has been a challenging problem for the...     

Comparative evaluation of extraction of tetra- and hexa-valent neptunium ions by CMPO in a room temperature ionic liquid

ABSTRACT

Solvent extraction studies were performed to understand the extraction behavior of Np⁴⁺ and NpO₂ ²⁺ from acidic feeds with CMPO (octyl (phenyl)-N,N-diisobutyl carbamoyl methyl phosphine oxide) dissolved in 1-butyl-3-methylimidazolium bis(trifluoromethane sulfonyl)imide, a water immiscible ionic liquid. Slope analyses on the distribution data revealed the extraction of ML₂ type species, where M = Np⁴⁺ or NpO₂ ²⁺, and L = CMPO. Studies were also carried out with Pu⁴⁺ and UO₂ ²⁺ under identical conditions. The nature of the extracted species was found to vary with the nature of the ionic species.     

Impact of Mole Fractions due to Work Function Variability (WFV) of Metal Gate on Electrical Parameters in Strained SOI-FinFET

In the recent sub-20 nm technology node, the process variability issues have become a major problem for scaling of MOS devices. We present a design for a strained Si/SiGe FinFET on an insulator using a 3D TCAD simulator. The impact of metal gate work function variability (WFV) on electrical parameters is studied. Such impact of WFV for different mole fractions (x) of the SiGe layer in a strained SOI-FinFET with varying grain size is presented. The results show that as the mole fraction is increased, the variability in threshold voltage (σVT) and off current (σIoff) is decreased; while, the variability of on-current (σIon) is increased. A notable observation is the distribution of electrical parameters approaches a normal distribution for smaller grain sizes.     

Dielectric behavior of Cu–GeO<Subscript>2</Subscript> cermet thin films

Capacitance and dielectric loss measurements were carried out using an Al/Cu–GeO₂/Al sandwich structure for 0 to 10 vol% Cu films, 120–400 nm thick, deposited at 0.4–1.5 nm/s in the frequency and temperature range 1–10⁶ Hz and 90–573 K, respectively. The variation of capacitance and dielectric loss with frequency and temperature follows the Goswami and Goswami model. Capacitance decreases slowly with increasing thickness and also varies with the change in deposition rate of the cermet film.     

Cut off frequency and transit time analysis of lightly doped drain (LDD) MOSFETs

Analytical model for the transconductance, cut off frequency, transit time and fringing capacitance of LDD MOSFETs is presented with a simple approach. The analysis is carried out considering the LDD device as a conventional MOSFET with a series resistance [Z.-H. Liu et al., Threshold voltage model for submicrometer MOSFETs. IEEE Trans Electron Devices 1993; ED-40: 86–94] and a simple closed form expressions for cut off frequency and transit time is obtained. The total gate capacitance, i.e. the geometric and fringing capacitance, is calculated for both LDD and non-LDD devices and lower fringing capacitance is reported in LDD devices. Lower cut-off frequencies and higher transit time are reported in LDD devices for the same channel length.     

Microstructural Investigation on Failure of Internal Drive Shaft

17-4 PH stainless steel is used as internal drive shaft material in liquid engine pumps. One of the drive shafts failed during operation. The shaft pieces were in contact for short duration after failure, which has resulted in abrasion of fractured surfaces. Samples from the location of failure were taken, and investigation of the failure was carried out using optical and scanning electron microscopy. The microstructural analysis of the material and fractographic analysis of the fractured surface show that the failure was caused by excessive torsion.     

Full scale thermal testing of latent heat storage in wallboard

Full scale thermal storage tests were conducted in a room lined with PCM wallboard having latent heat storage capacity. The results were compared with those obtained from tests conducted in a similar room lined with ordinary wallboard. The research showed that PCM wallboard can function efficiently as a thermal storage medium which can be applied to peak load shifting, improved use of waste and solar heat as well as more efficient operation of heating and cooling equipment.