Isolated hepatic tuberculosis mimicking liver tumors in a dialysis patient

Cases of isolated hepatic tuberculosis (TB) are rare. The diagnosis is often delayed or missed because of nonspecific symptoms and laboratory findings. Besides, the disease is extremely rare even in a country where TB is an alarming public health problem. This report demonstrates the difficulty in correctly diagnosing local hepatic TB. We report the case of a 62‐year‐old male patient with end‐stage renal disease treated with hemodialysis, who developed 2 months of abdominal distension and general anorexia, with hyperechoic hepatic lesions on ultrasound. Computed tomography suspected multiple liver tumors. The liver biopsy finally led to the diagnosis of TB of the liver without other involvements. We conclude that isolated hepatic TB is one of the rare forms of extrapulmonary TB in dialysis patients. A greater awareness of this rare clinical entity may prevent needless surgical interventions.     

巧用华中系统复合循环G71指令车削零件

结合实例详解了华中数控系统复合循环指令G71在实际编程与加工中的应用。此指令的应用,解决了在加工轴类零件过程中运用传统的加工方法难以满足形状复杂、精度高等要求的问题,从而提高了工作效率。     

北部湾盆地福山凹陷CO2气成因探讨

北部湾盆地福山凹陷油气钻探中发现了高含CO₂气的天然气气藏。对CO₂气稳定碳同位素、伴生稀有气体氦和氩同位素进行了分析研究，结果显示，福山凹陷CO₂气稳定碳同位素偏重，(13C_CO2为-5.01～-10.08‰，绝大多数样品大于-7.0‰，为无机成因CO₂气特征；伴生稀有气体氦同位素³He/⁴He值为(4.74~5.03)×10^-6，R/Ra值为3.38～3.59；伴生稀有气体氩同位素⁴⁰Ar/³⁶Ar值为1881～2190，也显示出幔源或壳幔混合CO₂气的特征。综合判定认为，福山凹陷CO₂为壳幔混合成因。始新统流沙港组岩浆岩体分布特征与CO₂气藏分布范围基本一致，也表明幔源-岩浆可能是福山凹陷CO₂气的主要来源。与南海北部边缘盆地其它地区如珠江口盆地西部、琼东南盆地东部CO₂气成因一致，都为幔源-岩浆来源，或壳幔混合来源。     

Cu基络合物催化甲醇液相氧化羰化反应

针对甲醇液相氧化羰基化法合成碳酸二甲酯(DMC)工艺,开发了新型Cu基络合催化剂(CuB rnLm)。对CuB rnLm催化剂的活性及其稳定性进行了研究。实验结果表明,采用该催化剂,甲醇转化率和DMC选择性较高;元素价态和物质结构分析表明,CuB rnLm催化剂循环使用5次后仍保持较好的稳定性。采用正交设计和中心响应曲面法设计实验,并使用S tatistica软件进行统计分析,寻求出反应的主要影响因素,并得到优化的工艺条件:反应温度100~110℃、反应压力3.0~3.5M Pa、反应时间4~6h、CuB rnLm催化剂质量浓度(以甲醇的体积计)0.15~0.20g/mL。在此工艺条件下,甲醇转化率可达23%以上,DMC的选择性为96%~98%。     

石油沥青60℃动力粘度测定影响因素的探讨

粘度是表征沥青稠度的一个重要指标。通过论述石油沥青粘度测定法(真空毛细管法)中毛细管的选择、温度、真空度、取样量等对试验结果的影响及试验过程中的其它注意事项,表明了在测定石油沥青的60℃动力粘度时,必须严格按照试验方法的要求进行测定,以保证试验结果的准确性。     

Hf-doped and NH/sub 3/-nitrided high-K gate dielectric thin film with least drain current degradation and flatband voltage shift

A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V.