遥操作工程机器人系统临场感技术研究-6自由度临场运动感觉反馈技术的研究进展

 研究开发出一种遥操作工程机器人系统，可以应用于诸如火灾现场的修复作业等广阔的领域．该系统由伺服控制的工程机器人、2根从远处操纵工程机器人的操纵杆、视频系统和6自由度运动模拟器组成．操作者坐于座椅上，座椅固定于运动模拟器的上方． 该系统需要解决的一个关键问题是如何使操纵者高质量地获得工作现场的临场运动感觉． 提出了一种6自由度临场运动感觉反馈方法，其信号源来自工程机器人上安装的6个加速度传感器． 该方法的有效性已为实验所证明，即应用6自由度运动模拟器不但可以高质量地模拟工程机器人单个自由度的运动：滚动、俯仰、转动以及前后、左右、上下的平移，而且可以高质量地模拟工程机器人的各种复合运动．     

CREEP-FATIGUE CRACK GROWTH AND FRACTOGRAPHY OF A TYPE 304 STAINLESS STEEL AT ELEVATED TEMPERATURE

Abstract— Creep-fatigue crack growth behaviour of a Type 304 stainless steel under four types of reversed loading patterns (P-P, P-C, C-P and C-C) was investigated and the results are discussed in the light of fracture mechanics and fractography. The crack growth rate for all of the four types of loading was successfully correlated in terms of the cyclic integral range λ J. It was unnecessary, for practical purpose, to divide Ay into a fatigue component, λ J _f, and a creep component, λ J _c, as has been done elsewhere. The transition of the correlating fracture mechanics parameter from fatigue to creep was not necessarily associated with the fracture morphology. This was related to the longer transition hold time in morphology in C-C type loading compared to C-P type loading, and was attributed to recovery of grain boundary sliding during the compression hold in the C-C type loading.     

Heavy arsenic doping of silicon grown by atmospheric pressure selective epitaxial chemical vapor deposition

Selective epitaxial Si with a high arsenic concentration of 2.2×10¹⁹ atoms/cm³ was deposited at a high growth rate of 3.3 nm/min under atmospheric pressure. It was confirmed that this method had excellent selectivity and produced films having good crystalline quality, abrupt dopant profiles at the interfaces, and smooth surfaces. The growth mechanism is discussed in terms of the relationship between the effects of arsenic surface segregation and etching by hydrogen chloride.     

Formation of Lead Zirconate-Lead Titanate Solid Solutions

Formation of the Pb(Zr,Ti)O₃ solid solution in the system PbO-TiO₂-ZrO₂ was studied by chemical analysis and X-ray powder diffrac-tometry. Only PbTiO₃ and Pb(Zr,Ti)O₃ were found as reaction products. The following three elementary reactions seemed to be reasonable for the formation of the Pb(Zr,Ti)O₃ phase: PbO + TiO₂→ PbTiO₃, PbTiO₃+ PbO + ZrO₂→Pb(Zr_1-λTi_λ)O₃, and Pb(Zr_l-λTi_λ)O₃+ PbTiO₃→ Pb(Zr_1-λ'Ti_λ')O₃ (λ<λ').     

Investigation of the effect of surface phosphate ester dispersant on viscosity by coarse-grain modeling of BaTiO slurry

To understand the role of phosphate ester dispersant, we investigated the rheology of a BaTiO slurry. For the model case, a coarse-grain molecular dynamics (CGMD) simulation was performed with the butyral polymer didodecyl hydrogen phosphate (DHP) in the toluene/ethanol solvent. By systematically analyzing the effect of DHP from an atomic-scale first principle and from all-atom MD to microscale CGMD simulation, we investigated how the adsorption of a DHP dispersant on a BaTiO surface affects the microstructure rheology of a BaTiO slurry. The first-principle and all-atom MD simulation suggests that DHP molecules prefer to locate near the BaTiO surface. CGMD simulation shows a reduction in viscosity with an increase in dispersants, suggesting that the dispersant population near the BaTiO surface plays a key role in controlling the rheology of the BaTiO slurry. In this study, we propose an approach for understanding the BaTiO slurry with molecular-level simulations, which would be a useful tool for efficient optimization of slurry preparation.     

Comparison between SiO2 films deposited by atomic layer deposition with SiH2[N(CH3)2]2 and SiH[N(CH3)2]3 precursors

Thin SiO₂ layers were deposited by atomic layer deposition (ALD) using either Bis-dimethylamino-silane (BDMAS: SiH₂(N(CH₃)₂)₂) or Tris-dimethylamino-silane (TDMAS: SiH(N(CH₃)₂)₃) precursors. The purpose of this study is to evaluate these precursors for their suitability for ALD of hafnium (Hf)-silicate gate dielectrics. The advantages of these precursors are that the melting points and vapor pressures are moderate. The thickness of SiO₂ deposited using ALD process is controlled by the number of growth cycles and the growth rate was different for each precursor, that for BDMAS being 1.5 times that for TDMAS at the same reactor pressure. The carbon impurity in the SiO₂ film deposited using BDMAS was about half an order of magnitude less than that using for TDMAS. Furthermore, the carbon impurity was reduced to about the detection limit of secondary ion mass spectrometry after high temperature annealing at 1000 °C during 5 s.     

Surface modification of biodegradable plastics by ion beams

Biodegradable plastics can be used as conventional plastics, while on disposal they decompose to water and carbon dioxide by microorganisms existing in natural environment. Products using biodegradable plastics have recently been developed in many companies pursuing ecology. In this study, surface modification of biodegradable plastics was carried out by inert ion beams for improvement of photo deterioration under an ultraviolet ray. The hardness of biodegradable plastics tended generally to decrease with irradiation of an ultraviolet ray. In this method, the hardness of ion-bombarded biodegradable plastics was kept at an initial value under an ultraviolet ray, because the modified layer by ion bombardment intercepted an ultraviolet ray. The hardness of He⁺ ion-bombarded biodegradable plastics showed larger value than that of Ar⁺ ion bombardment. He⁺ ion bombardment at ion energy of 10 keV produced the suitable property with both of high transmittance of a visible ray and high interception of an ultraviolet ray in a surface layer of biodegradable plastics.     

The characteristics of the external‐electrode mercury fluorescent lamp for backlighting liquid‐crystal‐television displays

Abstract— A reliable external‐electrode mercury fluorescent lamp (EEFL) has been developed for backlighting a liquid‐crystal‐television (LC‐TV) display. This involved the investigation of the EEFL characteristics and the improvement in the construction of the EEFL and drive waveforms, in the frequency range of 50–200 kHz, that affects the EEFL characteristics. The results showed that a sinusoidal waveform is suitable for driving the EEFL, and EEFL's voltage decreases when the frequency of the drive waveform is increased.     

High temperature superconductor micro-superconducting-quantum-interference-device magnetometer for magnetization measurement of a microscale magnet

We have developed a high temperature superconductor (HTS) micrometer-sized dc superconducting quantum interference device (SQUID) magnetometer for high field and high temperature operation. It was fabricated from YBa2Cu3O7-delta of 92 nm in thickness with photolithography techniques to have a hole of 4x9 microm2 and 2 microm wide grain boundary Josephson junctions. Combined with a three dimensional magnetic field coil system, the modulation patterns of critical current Ic were observed for three different field directions. They were successfully used to measure the magnetic properties of a molecular ferrimagnetic microcrystal (23x17x13 microm3), [Mn2(H2O)2(CH3COO)][W(CN)8]2H2O. The magnetization curve was obtained in magnetic field up to 0.12 T between 30 and 70 K. This is the first to measure the anisotropy of hysteresis curve in the field above 0.1 T with an accuracy of 10(-12) J T(-1) (10(-9) emu) with a HTS micro-SQUID magnetometer.     

Te concentration dependent photoemission and inverse-photoemission study of FeSe1?xTex

We have characterized the electronic structure of FeSe_1−xTe_x for various x values using soft x-ray photoemission spectroscopy (SXPES), high-resolution photoemission spectroscopy (HRPES) and inverse photoemission spectroscopy (IPES). The SXPES valence band spectral shape shows that the 2 eV feature in FeSe, which was ascribed to the lower Hubbard band in previous theoretical studies, becomes less prominent with increasing x. HRPES exhibits systematic x dependence of the structure near the Fermi level (E_F): its splitting near E_F and filling of the pseudogap in FeSe. IPES shows two features, near E_F and approximately 6 eV above E_F; the former may be related to the Fe 3d states hybridized with chalcogenide p states, while the latter may consist of plane-wave-like and Se d components. In the incident electron energy dependence of IPES, the density of states near E_F for FeSe and FeTe has the Fano lineshape characteristic of resonant behavior. These compounds exhibit different resonance profiles, which may reflect the differences in their electronic structures. By combining the PES and IPES data the on-site Coulomb energy was estimated at 3.5 eV for FeSe.