Reduction mechanism of tioglycolic acid on keratin fibers using microspectrophotometry and FT-Raman spectroscopy

In order to investigate the reduction mechanism of thioglycolic acid (TG) on the keratin fibers, cross-sectional samples of white human hair treated with TG were prepared. The heterogeneous reaction between TG and keratin fibers involving the diffusion of TG into human hair was analyzed at the molecular level using microspectrophotometry and FT-Raman spectroscopy. The diffusion of TG into human hair clearly increased by increasing the treatment time and by raising pH. The TG relative concentration and the disconnected relative concentration of disulfide (–SS–) groups at various depths of the hair samples with pH 9.0 were in good agreement, indicating that the reaction rate (the disconnection of –SS– groups) was faster than the diffusion rate of TG into human hair. From these experiments, we demonstrated that TG diffuses gradually beyond the cuticle region, and toward the inside of the cortex region along with the disconnection of –SS– groups.     

An optimization algorithm based on stochastic sensitivity analysis for noisy objective landscapes

A function minimization algorithm that updates solutions based on approximated derivative information is proposed. The algorithm generates sample points with Gaussian white noise, and approximates derivatives based on stochastic sensitivity analysis. Unlike standard trust region methods which calculate gradients with n or more sample points, where n is the number of variables, the proposed algorithm allows the number of sample points M to be less than n. Furthermore, it ignores small amounts of noise within a trust region. This paper addresses the following two questions: how does the derivative approximation become worse when the number of sample points is small? Can the algorithm find good solutions with inexact derivative information when the objective landscape is noisy? Through intensive numerical experiments using quadratic functions, the algorithm is shown to be able to approximate derivatives when M is about n/10 or more. The experiments using a formulation of the traveling salesman problem show that the algorithm can find reasonably good solutions for noisy objective landscapes with inexact derivatives information.     

Quantitative analysis of organochlorine pesticide residues in Chinese drugs

This paper reports the GC determination of 20 organochlorine pesticides in Chinese drugs Flos Ionicerae and Moluodan etc by the present method of Japan for determinaing pesticide residues. The results suggest that except Folium Isatidis, Radix Codonopsis and Sanqi Pian all accord with the for provisions pesticide residues in Japanese foodstuffs.     

Manipulation of Micro Solid Particles and Induced Flows in Water by Laser Irradiation

Q-switch for pulsing laser beam and Galvano scanner for rapid scanning laser beam were adapted to manipulatemicro solid particles in a water droplet.The trapping of fine particles at micron-sized diameters by a YAG lasersystem,induced flows,and the induced motion of the particles by laser beam irradiations are discussed.Particlerotations are observed by using anisotropic micro objects,and moreover the rotational rate with clockwise direc-tion is 22 r/min.The fragments of a cover glass were mixed in a water droplet,and their size and shape are un-even.The rotation of that non-spheres without scanning by the Galvano scanner is also observed in water.     

Application of SiC-Si functionally gradient material to thermoelectric energy conversion device

Because of its high–temperature chemical stability, SiC ceramic is a promising material for high-temperature device applications such as thermoelectric energy converters. However, the electrical conductivity of SiC ceramic is too low for it to be used as a thermoelectric energy converter at the cold junction. Therefore, we propose a SiC-Si functionally gradient material (FGM) in order to improve the electrical conductivity of the SiC ceramic at the cold junction. An SiC rod was fired in a temperature gradient furnace. One end of the SiC rod was maintained at 2473 K and the other end was maintained at 1973 K for 30 min. After firing, the porous SiC edge fired at 1973 K was dipped into molten Si in order to infiltrate molten Si into the porous SiC. The microstructure of the FGM is classified into three regions: the SiC-Si composite material; the porous SiC ceramic; and the densified SiC ceramic. The electrical conductivity, the Seebeck coefficient and the thermal conductivity for each region of SiC-Si FGM was measured at 300 K; a figure of merit was calculated. The figure of merit of the SiC-Si FGM at the cold junction, at room temperature, was 10⁸ times higher than that of a nongradient SiC ceramic.     

Channelling studies on the lattice location of B atoms in graphite

In order to obtain information on the lattice location of B atoms in graphite, channelling experiments have been performed at room temperature with a proton beam of an energy of 0.65-0.77 MeV for the 〈0 0 0 1〉 axial channel in highly oriented pyrolytic graphite (HOPG) crystals doped with 0.32 at.% B. The B atoms are detected by measuring α-particles which are emitted as a result of a nuclear reaction ¹¹B(p,α)αα. It is clearly demonstrated that most of B atoms are shadowed behind the 〈0 0 0 1〉 C atomic rows. Taking account of the already reported experimental results on a change of lattice parameters by B-doping, it is concluded that most of B atoms are located at substitutional sites. It is also observed that B-doping introduces lattice strain on the c-plane. In addition, the presence of a small portion of interstitial B atoms is suggested.     

High performance 35 nm gate length CMOS with NO oxynitride gate dielectric and Ni salicide

The 35 nm gate length CMOS devices with oxynitride gate dielectric and Ni salicide have been fabricated to study the feasibility of higher performance operation. Nitrogen concentration in gate oxynitride was optimized to reduce gate current I/sub g/ and to prevent boron penetration in the pFET. The thermal budget in the middle of the line (MOL) process was reduced enough to realize shallower junction depth in the S/D extension regions and to suppress gate poly-Si depletion. Finally, the current drives of 676 /spl mu/A//spl mu/m in nFET and 272 /spl mu/A//spl mu/m in pFET at V/sub dd/=0.85 V (at I/sub off/=100 nA//spl mu/m) were achieved and they are the best values for 35 nm gate length CMOS reported to date.