Improved direct bonding method of Nd:YVO4 and YVO4 laser crystals

We succeeded in the fabrication of bonded laser crystals composed of a neodymium-doped YVO₄ laser crystal (Nd:YVO₄) and its host crystals YVO₄ by a newly developed dry etching technique using an argon ion beam. The optical distortion caused by the bonded interface of size 5 mm × 6 mm was estimated to be 0.05λ at 633 nm. From the comparison of laser performance pumped by a laser diode, the bonded crystals could increase the laser output power by nearly twice that of the non-bonded crystals with the same degree of polarization of 99.2%. To analyze the mechanism of the enhanced reduction of the thermal load in the bonded crystals, numerical simulations with a finite-element method were also performed.     

Plastic deformation of bcc metal thin foils without dislocation

Heavy plastic deformation of fcc metal thin foils to fracture has been found recently to proceed without involving dislocations, and it results in the formation of high density of vacancy clusters. Thin foil specimens of bcc metals such as V and Mo were plastically deformed to fracture in in situ elongation experiments under an electron microscope. Morphology of thinning and fracture was found to be similar to fcc metals, and no dislocation was observed during heavy deformation. Electron diffraction analysis at the tip of a crack during deformation confirmed a large elastic deformation of up to 5%. Unlike in fcc metal thin foil specimens, point defect clusters were not observed near fractured tips. This difference is attributed to the difference in vacancy reaction, though the deformation in bcc metals without dislocation most likely does produce vacancies.     

Dislocation structures introduced by high-speed deformation in bcc metals

Systematic experiments were carried out over a wide range of strain rate, 10⁰–10⁶ s⁻¹, so as to reveal the deformation mode in bcc crystals, especially at high strain rate. Dislocation structure showed heterogeneous distribution at low strain rates in all three bcc metals examined. At higher strain rates exceeding 10³ s⁻¹, distribution of dislocations was random, and the formation of small dislocation loops was observed in V and Nb. In Mo, small dislocation loops were not formed by deformation, even at high strain rates. However, post-deformation annealing of an Mo specimen that had been deformed by 20% at 5×10⁵ s⁻¹ produced dislocation loops. The inside–outside contrast method identified these loops to be of vacancy type. These results reveal that in Mo vacancy clusters are not formed directly from the interaction of dislocations, but by the aggregation of vacancies. In V and Nb, the same formation process is believed to occur at high strain rates. These results suggest that the different mode of plastic deformation at high strain rates accompanied by production of vacancies also occurred in bcc metals.     

Dynamics of Vortex Lattice Formation in a Rotating Bose-Einstein Condensate with an Optical Lattice Potential

We study dynamics of quantized vortex lattice formation in a rotating Bose-Einstein condensate with a square blue-detuned optical lattice by solving the Gross-Pitaevskii equation. This dynamics depends on the depth of the optical lattice. Vortices tend to form a triangular lattice under the rotation, while an optical lattice likes to pin vortices at their peaks. Such a competition of two effects makes this system more interesting and complicated.     

A reconfigurable VLSI-based double-lens tracking camera

Watching and tracking an object while seeing a much wider view is one of advantages of the eye system. We proposed and developed a tracking camera system that mimics the eyes by using double-lens modules. In the system, a wide view is captured through the wide-lens module, while the target in it is tracked and magnified through the telescopic lens module. Electronic circuits for tracking control are implemented onto the reconfigurable VLSI or FPGA in order to embed the parallelism in the tracking algorithm into the hardware. A successfully developed FPGA-based prototype performs high-speed tracking at the video-rate. This work was present in part at the 12th International Symposium on Artificial Life and Robotics, Oita, Japan, January 25–27, 2007     

Thieno[2,3-d]pyrimidine-3-acetic acids. A new class of nonpeptide endothelin receptor antagonists

On the basis of structural information for the cyclic hexapeptide endothelin (ET) receptor antagonist, TAK-044, a series of thieno[2,3-d]pyrimidine-2,4-dione derivatives bearing a carboxyl group and aromatic rings that were important for receptor binding were designed, synthesized, and evaluated for ET receptor binding affinities and inhibitory activities against ET-induced vasoconstriction. Optimization of each substituent in the thieno[2,3-d]pyrimidine ring led to the discovery of a novel and potent nonpeptide ET receptor antagonist, 6-(4-methoxymethoxyphenyl)-5-methylsulfonylaminomethyl-1-(2- methylthiobenzyl)-2,4-dioxo-1,2,3,4-tetrahydrothieno[2,3-d]p yrimidine-3- acetic acid (32 g), which binded to human ETA and ETB receptor subtypes with affinities (IC50) of 7.6 and 100 nM, respectively. Compound 32 g effectively antagonized ET-induced vasoconstriction and the inhibitory effect mediated by the ETB receptor was more potent than that of bosentan, while the inhibitory effect mediated by the ETA receptor was slightly less potent than that of bosentan.     

Sintering of the Mechanochemically Activated Powders of Hexagonal Boron Nitride

Pressureless sintering of hexagonal boron nitride (BN) was performed using a powder activated by mechano-chemical treatments. Physical properties of the sintered BN bodies depend on the type of starting powder and the conditions of the treatments. The BN body, which was obtained at 2000°C using an appropriate activated powder, was 99 wt% pure and was excellent in mechanical and physical properties, in spite of its low density (1.64 g/cm³).     

Flash pyrolysis of coal: effect of nitrogen,argon and other atmospheres in increasing olefin concentration and its significance on the mechanism of coal pyrolysis

Samples of three Indian coals, of widely differing origin and rank, were subjected to flash pyrolysis at a temperature of about 1150 °C for 30 s in vacuo, and under atmospheres of nitrogen, argon, ammonia, and perdeuterobenzene. The gaseous products of the pyrolyses were analysed by infra-red and mass spectroscopy and by gas chromatography. Observed variations in gas compositions are discussed relative to the possible mode of influence by the pyrolytic atmospheres. It would appear that the pyrolytic atmosphere is an important factor in determining the composition of the pyrolysis products; the influence of nitrogen, argon and perdeuterobenzene is a physical one, leading especially to higher yields of olefins.     

Evolvable Reasoning Hardware: Its Prototyping and Performance Evaluation

In this paper, we propose evolvable reasoning hardware and its design methodology. In the proposed design methodology, case databases of each reasoning task are transformed into truth tables, which are evolved to extract rules behind the past cases through a genetic algorithm. Circuits for the evolvable reasoning hardware are synthesized from the evolved truth-tables. Parallelism in each task can be embedded directly in the circuits through the direct hardware implementation of the case databases. We developed the evolvable reasoning hardware prototype using Xilinx Virtex FPGA chips and applied it to the English-pronunciation-reasoning (EPR) task. The evolvable reasoning hardware for the EPR task was implemented with 270K gates, achieving an extremely high reasoning speed of less than 300 ns/phoneme. It also achieved a reasoning accuracy of 82.1% which is almost the same accuracy as NETTalk in neural networks and MBRTalk in parallel AI.     

Comparison between SiO2 films deposited by atomic layer deposition with SiH2[N(CH3)2]2 and SiH[N(CH3)2]3 precursors

Thin SiO₂ layers were deposited by atomic layer deposition (ALD) using either Bis-dimethylamino-silane (BDMAS: SiH₂(N(CH₃)₂)₂) or Tris-dimethylamino-silane (TDMAS: SiH(N(CH₃)₂)₃) precursors. The purpose of this study is to evaluate these precursors for their suitability for ALD of hafnium (Hf)-silicate gate dielectrics. The advantages of these precursors are that the melting points and vapor pressures are moderate. The thickness of SiO₂ deposited using ALD process is controlled by the number of growth cycles and the growth rate was different for each precursor, that for BDMAS being 1.5 times that for TDMAS at the same reactor pressure. The carbon impurity in the SiO₂ film deposited using BDMAS was about half an order of magnitude less than that using for TDMAS. Furthermore, the carbon impurity was reduced to about the detection limit of secondary ion mass spectrometry after high temperature annealing at 1000 °C during 5 s.