团簇离子束纳米加工技术研究进展

团簇离子束是带电的团簇,可以在电场、磁场作用下加速、传输或偏转,形成几个eV到几个MeV能量的离子束。文中阐述了团簇离子束的基本概念、产生方法和主要应用。大尺寸气体团簇和硼基团簇必须用高压气体超声绝热膨胀方法产生,然后通过电子碰撞电离形成团簇正离子。硼团簇用于超浅结制备,实现了结深为10~20nm的超浅注入;包含数千原子的大团簇则被用于半导体的表面平化,获得了粗糙度在0.7nm以下的平滑表面。用铯溅射离子源可以产生几个到几十个原子的负离子小团簇,包括B、C、F、Si及其分子团簇(SiB、GeB)。其中,硼基分子团簇离子束已用于对半导体进行瞬态增强扩散掺杂,与半导体表面的离子注入非晶化工艺相结合,实现了接近纳米量级的超浅注入。碳系团簇最近被用于超薄材料制备,获得了单层和双层石墨烯,并发现团簇离子束引起的非线性辐照损伤对石墨烯的形成具有重要影响。结果表明:团簇离子技术在超大集成电路和新型超薄纳米材料制备等领域具有广泛的应用前景。     

A Computerized System for the Measurement of Nanomaterial Field Emission and Ionization

We have developed a computerized system for measuring field electron emission (FE) and field ionization (FI),which has a three-electrode configuration with emitters biased up to 25 kV,and is programmed by the Labview software.The current-voltage curves of nano-tip tungsten and carbon nanotube (CNT) arrays were measured.The electron emission of CNTs proceeded with a turn-on field of 1.24V/μm and a threshold field of 1.85V/μm.Compared to the field emission,field ionization turned on at 3.5V/μm.Raman spectroscopy and scanning electron microscopy (SEM) measurements showed degradation of the CNTs after FE/FI testing.The measurement of a W-tip revealed strong electron emission and instability behavior at a field strength higher than 7.0V/μm.     

Instrumentation and application of the ion beam analysis line of the in situ ion beam system

An ion beam analysis system was established on a 1.7 MV tandem accelerator, enabling Rutherford backscattering(RBS), elastic recoil detection(ERD), nuclear reaction analysis(NRA) and channeling measurements. The system was tested by performing qualitative and quantitative analysis of Si, Ni/Si, Bi Fe O3:La/Si,Mo C/Mo/Si and Ti BN/Si samples. RBS of a Bi Fe O3:La film was used as system calibration. Tested by ion beam channeling, a Si(100) is of good crystallinity(χmin= 3.01%). For thin film samples, the measured thickness agrees well with simulation results by SIMNRA. In particular, composition of a Mo C/Mo/Si and Ti BN film samples were analyzed by RBS and non-Rutherford elastic backscattering.