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采用阳极氧化法制备TiO_2纳米管阵列薄膜(TNTAs),在不同热处理温度下对其进行晶化处理,然后采用电化学氢化法对TNTAs实施氢化改性,获得导电性显著提高的H-TNTAs。利用场发射扫描电镜、X射线衍射、X射线光电子能谱、显微共焦激光拉曼光谱研究了晶化温度对TNTAs和H-TNTAs微观结构的影响,利用电池测试系统,探究晶化温度对TNTAs和H-TNTAs作为锂电负极的电化学性能影响。结果表明:当晶化温度从400℃升高至700℃时,非晶TiO_2逐渐晶化为锐钛矿相,在600℃时发生锐钛矿向晶红石相转变,700℃时管状结构发生破坏;随着晶化温度的升高,TNTAs电极的比容量不断降低;氢化改性后HTNTAs的比容量和倍率特性均有提升,但是不同晶化温度的H-TNTAs比容量和倍率特性提升幅度不一,主要是由于氢化时引入的Ti~(3+)在不同晶体结构TiO_2中浓度和稳定性不同,其中晶化温度为500℃时,单一锐钛矿相、结晶良好的H-TNTAs-500的电化学性能最优,比容量和倍率特性提升最为显著。 相似文献
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Unique multiple heterojunction of Pt-BiOBr/TiO2 nanotube arrays (Pt-BiOBr/TNTAs) was achived by successively loading both Pt nanoparticles (NPs) and BiOBr nanoflkes (NFs) on surface of ordered and spaced TiO2 nanotubes (NTs) using anodization followed by solvothermal and sequential chemical bath deposition (S-CBD) method. The fabricated Pt-BiOBr/TNTAs were fully characterized, and the photocatalytic (PC) activity and stability of Pt-BiOBr/TNTAs toward degradation of methyl orange (MO) under visible-light irradiation (λ>400 nm) were evaluated. The results reveal that multiple heterostructures of Pt/TiO2, Pt/BiOBr and BiOBr/TiO2 are constructed among TNTAs substrate, Pt NPs and BiOBr NFs, and the hybrid Pt-BiOBr/TNTAs catalyst exhibits remarkable visible-light PC activity, favourable reusability and long-term stability. The combined effect of several factors may contribute to the remarkable PC performance, including strong visible-light absorption by both Pt NPs and BiOBr NFs, lower recombination rate of photo-generated electrons and holes attributed to the multiple heterojunction, microstructures for facile light injection and adsorption as well as efficient mass transport, and larger specific surface area for enhancing light absorption, increasing the effective contact area between the absorbed dye molecules and catalyst and benefiting the molecule transport of reactants or products. This work has been supported by the National Natural Science Foundation of China (Nos.51402078 and 51302060), Anhui Provincial Natural Science Foundation (No.1408085QE85), and the Young Scholar Enhancement Foundation (Plan B) of Hefei University of Technology in China (No.JZ2016HGTB0711). E-mail:jqliu@hfut.edu.cn 相似文献
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