Design and evaluation of a mobile smart home interactive system with elderly users in Brazil

Personal and Ubiquitous Computing - This article presents a study concerning the evaluation of a smart home control system for elderly people with a sample of 10 users in a city in the interior of...     

Role of Metabolism in Bone Development and Homeostasis

Carbohydrates, fats, and proteins are the underlying energy sources for animals and are catabolized through specific biochemical cascades involving numerous enzymes. The catabolites and metabolites in these metabolic pathways are crucial for many cellular functions; therefore, an imbalance and/or dysregulation of these pathways causes cellular dysfunction, resulting in various metabolic diseases. Bone, a highly mineralized organ that serves as a skeleton of the body, undergoes continuous active turnover, which is required for the maintenance of healthy bony components through the deposition and resorption of bone matrix and minerals. This highly coordinated event is regulated throughout life by bone cells such as osteoblasts, osteoclasts, and osteocytes, and requires synchronized activities from different metabolic pathways. Here, we aim to provide a comprehensive review of the cellular metabolism involved in bone development and homeostasis, as revealed by mouse genetic studies.     

InxGa1−xAs ohmic contacts to n-type GaAs with a tungsten nitride barrier

Significant reduction of the contact resistance of In_0.7Ga_0.3As/Ni/W contacts (which were previously developed by sputtering in our laboratory) was achieved by depositing a W₂N barrier layer between the Ni layer and W layer. The In_0.7Ga_0.3 As/Ni/W₂N/W contact prepared by the radio-frequency sputtering technique showed the lowest contact resistance of 0.2 Ωmm after annealing at 550°C for 10 s. This contact also provided a smooth surface, good reproducibility, and excellent thermal stability at 400°C. The polycrystalline W₂N layer was found to suppress the In diffusion to the contact surface, leading to improvement of the surface morphology and an increase in the total area of the In_xGa−As between metal and the GaAs substrate. These improvements are believed to reduce the contact resistance.     

Mutational analysis of amiloride sensitivity of the NhaA Na+/H+ antiporter from Vibrio parahaemolyticus

The activity of the NhaA Na+/H+ antiporter of Vibrio parahaemolyticus is inhibited by amiloride. We found an amino acid sequence in the NhaA that was identical to a putative amiloride binding domain of the Na+/H+ exchanger in mammalian cells. We constructed mutant NhaAs that had amino acid substitutions in the putative amiloride binding domain by site-directed mutagenesis. These include V62L (Val62 replaced by Leu), F63Y, F64Y, and L65F. Most mutant NhaAs showed decreased sensitivity for amiloride. Among these, the F64Y mutant NhaA showed the least amiloride sensitivity, with a Ki value 7 to 10 times greater than that in the wild type. Thus, the sequence between residues V62 and L65 in NhaA, especially F64, is very important for the inhibitory effect of amiloride on the antiporter.     

Hot carrier magnetophonon spectroscopy of semiconductors in high magnetic fields up to 40 T

Hot carrier magnetophonon resonances of n-type Si, short channel InP and p-type InSb were investigated in pulsed high magnetic fields up to 40 T. Using a recently developed high resolution technique in pulsed high fields, many new features of the hot carrier-phonon interactions in high magnetic fields were found.     

Enhanced hot-carrier-degradation in LDD MOSFET's under pulsedstress

Hot-carrier degradation of lightly doped drain (LDD) MOSFET's under ac stress is investigated. Enhanced ac degradation occurs in LDD MOSFET's as well as in single-drain MOSFET's. However, there is a peculiar degradation mechanism in LDD MOSFET's. For single-drain MOSFET's, enhanced ac degradation appears in both threshold voltage and transconductance at stress drain voltages larger than a critical value. On the other hand, for LDD MOSFET's, although the enhanced degradation in threshold voltage and transconductance appears at stress drain voltages larger than a critical value, the enhanced degradation in transconductance appears even under stress drain voltages lower than the critical value. The difference in the ac-enhanced degradation between LDD and single-drain structures can be explained by a hot hole generated neutral-electron-trap model and the change in hot-hole-injected oxide region according to stress bias conditions     

High ratios of free to total insulin-like growth factor-I in early infancy

A case of huge desmoid tumor successfully treated by hyperthermoradiotherapy is described. A 23-year-old man with familial adenomatous polyposis was operated upon for a desmoid tumor in the mesenterium involving the right kidney and small intestine in 1988. In 1990, the tumor recurred and could not be resected because of the involvement of the vena cava. The tumor grew larger and larger, and occupied two-thirds of the right lower quadrant. Several therapies using sulindac, tamoxifen, prednisolone, indomethacin, luteinizing hormone-releasing hormone analogue, and ascorbate were all ineffective. Finally, the combination of radiation and hyperthermia was used over a 6-month period. At the end of the hyperthermoradiotherapy, the tumor in the abdominal wall was markedly reduced in size, and the protruded abdominal wall became flat. To our best knowledge, this is the first report of the successful treatment of a huge desmoid tumor by hyperthermoradiotherapy.     

Hot-carrier-injected oxide region in front and back interfaces inultra-thin (50 nm), fully depleted, deep-submicron NMOS andPMOSFET's/SIMOX and their hot-carrier immunity

The hot-carrier-injected oxide region in the front and back interfaces is systematically clarified for fully depleted surface-channel nMOSFET's and surface-channel and buried-channel pMOSFET's fabricated on an ultra-thin (50 nm)-film SIMOX wafer. Based on these results, the influence of these injected carriers on front-channel properties is investigated. NMOSFET degradation is shown to be caused by hot-carriers injected into the drain side of the front oxide and pMOSFET degradation by hot-electrons injected into the drain side of both the front oxide and the back oxide. Additionally, it is shown experimentally that these fully depleted devices with effective channel lengths between 0.1-0.2 μm have fairly high hot-carrier immunity, even for single-drain structures     

Blue electroluminescent devices withSrGa2S4:Ce for full-color display

In order to realize full-color electroluminescent (EL) displays, which are expected as a dominant candidate for the future multimedia flat panel display, blue EL devices with SrGa₂S₄:Ce have been prepared by molecular beam epitaxy (MBE). This paper proposes a novel deposition method employing Sr metal and Ga₂S₄ compound as the source materials. A single-phase SrGa₂S₄ layer is obtained in a Ga₂S₃/Sr flux ratio of 60 and at the growth temperature of 560°C. We have obtained the well-saturated blue with CIE color coordinates of x=0.14, y=0.14 and brighter blue EL devices made by optimizing the growth conditions in MBE. The maximum luminance of 70 cd/m² in comparison with the 3 cd/m₂ of our previous EL devices, is achieved at a driving frequency of 1 kHz     

Correlation of electrical properties and internal friction in mixed conduction glasses containing ionic and electronic conduction (1) Fe2O3-Na2O-P2O5 glasses

The electrical properties and internal friction in (40–x)Fe₂O₃·xNa₂0.60P₂O₅ glasses were measured. Two or three peak on internal friction were observed in the temperature range of –100 to 300° C at a frequency of about 1 Hz. The peak area of internal friction could be explained quantitatively by the additivity law of diffusion of Na⁺ ion and hopping of electrons which are carriers similar to those of dielectric loss. Activation energy, peak temperature of dielectric loss and internal friction showed almost the same value. Both relaxation phenomena have the same mechanism which is due to the diffusion of Na⁺ion and the hopping of electrons between Fe²⁺ Fe³⁺. The high-temperature peak is assumed to result from the interaction between protons or alkali ions and non-bridging oxygen.