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K Golka T Reckwitz M Kempkes I Cascorbi M Blaskewicz SE Reich I Roots J Soekeland H Schulze HM Bolt 《Canadian Metallurgical Quarterly》1997,3(2):105-110
The gene encoding the 33 kDa piroplasm surface protein of Theileria sergenti isolated in Korea was cloned and the nucleotide sequence was determined by dideoxy chain termination method. The cloned gene corresponds to 869 bp encoding an open reading frame 283 amino acids. Comparison of the sequence between Korean and Japanese isolates showed 99.4% homology rate in the nucleotide sequence and 98.9% homology rate in the amino acid sequence. 相似文献
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Kheirodin N. Nevou L. Machhadani H. Crozat P. Vivien L. Tchernycheva M. Lupu A. Julien F.H. Pozzovivo G. Golka S. Strasser G. Guillot F. Monroy E. 《Photonics Technology Letters, IEEE》2008,20(9):724-726
We report on the demonstration of an intersubband (ISB) coupled quantum-well modulator operating at room temperature and telecommunication wavelength using a GaN-AIN quantum-well structure. The optical modulation is shown to result from electron tunneling between the wells. Stark shifting of the ISB absorption is observed. The maximum modulation depth is 0.79% at lambda= 2.3 mum and 0.18% at lambda= 1.37 mum for a mesa device with only 151-nm interaction length. We show that by reducing the mesa size down to 15 times 15 mum2, optical modulation bandwidth as large as 3 GHz can be obtained. 相似文献
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Lupu A. Julien F.H. Golka S. Pozzovivo G. Strasser G. Baumann E. Giorgetta F. Hofstetter D. Nicolay S. Mosca M. Feltin E. Carlin J.-F. Grandjean N. 《Photonics Technology Letters, IEEE》2008,20(2):102-104
We report on the demonstration of low-loss, single-mode GaN-InAlN ridge waveguides (WGs) at fiber-optics telecommunication wavelengths. The structure grown by metal-organic vapor phase epitaxy contains AlInN cladding layers lattice-matched to GaN. For slab-like WGs propagation losses are below 3 dB/mm and independent of light polarization. For 2.6-mum-wide WGs the propagation losses in the 1.5- to 1.58-mum spectral region are as low as 1.8 and 4.9 dB/mm for transverse-electric- and transverse-magnetic-polarization, respectively. The losses are attributed to the sidewall roughness and can be further reduced by the optimization of the etching process. 相似文献
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