A Novel LRRK2 Variant p.G2294R in the WD40 Domain Identified in Familial Parkinson’s Disease Affects LRRK2 Protein Levels

Leucine-rich repeat kinase 2 (LRRK2) is a major causative gene of late-onset familial Parkinson’s disease (PD). The suppression of kinase activity is believed to confer neuroprotection, as most pathogenic variants of LRRK2 associated with PD exhibit increased kinase activity. We herein report a novel LRRK2 variant—p.G2294R—located in the WD40 domain, detected through targeted gene-panel screening in a patient with familial PD. The proband showed late-onset Parkinsonism with dysautonomia and a good response to levodopa, without cognitive decline or psychosis. Cultured cell experiments revealed that p.G2294R is highly destabilized at the protein level. The LRRK2 p.G2294R protein expression was upregulated in the patient’s peripheral blood lymphocytes. However, macrophages differentiated from the same peripheral blood showed decreased LRRK2 protein levels. Moreover, our experiment indicated reduced phagocytic activity in the pathogenic yeasts and α-synuclein fibrils. This PD case presents an example wherein the decrease in LRRK2 activity did not act in a neuroprotective manner. Further investigations are needed in order to elucidate the relationship between LRRK2 expression in the central nervous system and the pathogenesis caused by altered LRRK2 activity.     

Broadband bowtie belt nanoantennas

In this article, we study a linear array of bowtie nanoantennas placed between two metallic strips that can work from 800 to 1420 nm (600 nm linewidth), with an electric field enhancement factor close to 20. We study the dynamical change of the position of the electric field enhancement amongst different elements in the array and, at the same time, the effects of dispersion on the scalability of the array elements. A systematic analysis and methodology to produce an array that can operate over a large bandwidth whilst maintaining the electric field enhancement without significant variation is provided.     

Protection against adoptive transfer of autoimmune diabetes mediated through very late antigen-4 integrin

The very late antigen-4 (VLA-4) integrin expressed on the surface of lymphocytes and macrophages can regulate their migration to inflammatory sites as well as control cellular activation. The role of VLA-4 in the establishment of autoimmune diabetes is not easily predicted given the multiplicity of adhesion pathways and their differential use by various cell types. The contribution of VLA-4 to insulin-dependent diabetes mellitus was investigated by administration of VLA-4-specific monoclonal antibodies (MoAb) in an adoptive transfer model of disease in NOD mice. This study shows that VLA-4-specific MoAbs profoundly inhibit the development of diabetes with protection sustained by repeated MoAb exposure. Insulitis was completely inhibited during treatment and progressed to a severe degree once MoAb treatment was suspended, yet approximately 40% of treated recipients failed to become diabetic during 1-2 months post-treatment. Although we cannot rule out depletion of a relatively minor subpopulation of cells by prolonged anti-VLA-4 MoAb exposure, this inhibition of diabetes onset by treatment with MoAbs to VLA-4 supports a dependence on VLA-4 for cellular functions leading to diabetes and demonstrates that a significant disease modifying effect can be mediated by targeting the VLA-4 integrin.     

Performance prediction of a hybrid‐excitation synchronous machine with axially arranged excitation poles and permanent‐magnet poles

This paper presents a method of predicting the steady‐state performance of a new hybrid‐excitation synchronous machine (HESM) theoretically. The field pole of this HESM is axially divided into two parts; one is an excitation part and the other a permanent‐magnet (PM) part. A nonlinear equivalent circuit, which can include the saliency of the rotor and the magnetic saturation due to the iron core, is derived. Based on this equivalent circuit, the steady‐state performance of the HESM is calculated, and the results are confirmed through experiments. © 2004 Wiley Periodicals, Inc. Electr Eng Jpn, 150(2): 43–49, 2005; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20033     

Electron transport in InGaO3(ZnO)m (m=integer) studied using single-crystalline thin films and transparent MISFETs

We have investigated the characteristics of transparent metal-insulator-semiconductor field-effect transistors (MISFETs) fabricated using InGaO₃(ZnO)_m (m=integer) single-crystalline thin films as n-channel layers and amorphous alumina as gate insulator films. The MISFETs exhibit good characteristics such as insensitivity to visible light illumination, off-current as low as ∼1 nA with a positive threshold voltage of ∼3 V and on/off current ratio of 10⁵. The field-effect mobility increased from ∼1 to ∼10 cm² (V s)⁻¹ as the m-value increased. Room temperature Hall mobility also increased. However, unexpectedly these values were lower than the field-effect mobility. It is explained by existence of shallow localized state in the homologous compounds.     

Effects of nondensifying inclusions on the densification and microstructure of zinc oxide matrix composites

The densification and microstructure development of ZnO containing Zn₇Sb₂O₁₂, ZrO₂, and aggregated ZnO were investigated to elucidate the effect of nondensifying inclusions on the sintering of ceramic/ceramic composites. The inclusion retarded the densification, and the degree of retardation was found to depend on the chemical species of inclusion; Zn₇Sb₂O₁₂ had the largest effect, followed by ZrO₂ and then aggregated ZnO last. The experimental results for aggregated ZnO was explained by the theory which predicts the generation of backstresses. The backstresses give a less significant effect on the densification. For Zn₇Sb₂O₁₂ and ZrO₂, the microstructure of the matrix varied with distance from an inclusion particle; much porosity was observed in the region surrounding the inclusion. Circumferential voids, which are responsible for the suppression of densification, form during the initial stage of sintering. Inclusion particles generate an anchoring effect which retards the densification of the matrix immediately surrounding the inclusion particle during the intermediate stage.Supported by the Inamori Foundation.     

The effects of R-75,317 on antiglomerular basement membrane glomerulonephritis in rats

Platelet-activating factor (PAF) is a potent inflammatory mediator which is released by various inflammatory cells and produced by certain tissues, including the kidney. PAF has been shown to increase glomerular permeability to protein and to decrease glomerular filtration rate (GFR) by contracting mesangium. On the basis of these observations, it has been suspected that PAF may play a role as mediator of glomerular damage in glomerular nephritis. To examine this possibility, we studied the effects of a specific PAF antagonist, R-75,317, on the development of an experimental model of anti-glomerular basement membrane (anti-GBM) glomerulonephritis. Glomerulonephritis was initiated by injecting rabbit anti-rat GBM serum into rats. Proteinuria gradually developed after serum injection, plateaued at week 2, and remained at the high level of week 2 throughout the experimental period (6 wk). Chronic treatment with R-75,317 (10 mg/kg/day i.p.) tended to delay the onset of proteinuria and significantly accelerated the recovery phase. Creatinine clearance (Ccr) fell to 40% at week 3. R-75,317 treatment completely prevented this decline of Ccr. Histological changes in this model (glomerular hypertrophy, proliferation of mesangial matrix and interstitial fibrosis) were also ameliorated by the R-75,317 treatment. The results suggest that PAF may play a role in the development of glomerulonephritis and that PAF antagonists could be used in the treatment of human renal disease. Based on a paper presented at the Third International Conference on Platelet-Activating Factor and Structurally Related Alkyl Ether Lipids, May 1989.     

Preparation of SiB4±x and SiB6 plates by chemical vapour deposition of SiCl4 + B2H6 system

SiB_4±x and SiB₆ plates were prepared by chemical vapour deposition (CVD) using SiCl₄, B₂H₆ and H₂ gases under the conditions of deposition temperatures (T _dep) from 1323–1773 K, total gas pressures (P _tot) from 4–40 kPa and B/Si source gas ratio (m _B/Si=2B₂H₆/SiCl₄) from 0.2–2.8. The effects of CVD conditions on the morphology, structure and composition of the deposits were examined. High-purity and high-density SiB_4±x and SiB₆ plates about 1 mm thick were obtained at the deposition rates of 71 and 47 nm s⁻¹, respectively. The lattice parameter, composition and density of CVD SiB_4±x plates were dependent on their non-stoichiometry. The lattice parameter,a, was 0.6325 nm, butc ranged from 1.262–1.271 nm.The B/Si atomic ratio ranged from 3.1–5.0, and the density ranged from 2.39–2.45×10³ kg m⁻³. The CVD SiB₆ plates showed constant values of lattice parameters (a=1.444 nm,b=1.828 nm,c=0.9915 nm), composition (B/Si=6.0) and density (2.42×10³ kg m⁻³), independent of CVD conditions.