Assessment of Surface Roughness Bounded by Cosinusoids and Sinusoids

Russian Engineering Research - On the profilograms obtained for real surfaces machined by different methods, the microprojections resemble elements of sinusoids and cosinusoids. Accordingly, it is...     

V<Subscript>3.047</Subscript>O<Subscript>7</Subscript>, a new high-pressure oxide with the simpsonite structure

Reaction between α-V₂O₅ and NaN₃ has been studied at pressures from 5.0 to 6.0 GPa and temperatures from 600 to 800°C using Toroid high-pressure chambers. A new oxide, V_3.047O₇ (VO_2.297), isostructural with simpsonite, Al₄Ta₃O₁₃(OH), has been detected in samples with the initial composition 0.2NaN₃ · V₂O₅ after high-temperature, high-pressure processing at p = 5.0 GPa and t = 800°C for 2 min. The crystal structure of the oxide has been refined by the Rietveld method using X-ray powder diffraction data: a = 7.35136(2) Å, c = 4.51462(2) Å, V = 211.294(1) ų, Z = 2, sp. gr. P3. Each vanadium atom in this structure is coordinated by six oxygens in the form of a [VO₆] octahedron. The synthesized oxide is a second compound with the simpsonite structure. We have measured the infrared transmission and Raman spectra of V_3.047O₇. Electrical measurements have demonstrated that the material is a semiconductor.     

Behavior of detonation nanodiamond at high pressures and temperatures in the presence of a hydrogen-containing fluid

The recrystallization of detonation nanodiamond in the presence of hydrogen-containing fluids has been studied at pressures from 6 to 8 GPa and temperatures above 1000°C. Electron microscopy and Xray diffraction data demonstrate that, in the presence of a hydrogen-containing fluid, nanocrystalline diamond recrystallizes to micron dimensions. We discuss the mechanism underlying the influence of hydrogencontaining media on the growth of diamond nanocrystals.     

Synthesis of a new cubic phase in the B-C-N system

Phase formation in the B-C-N system has been studied at pressures from 6 to 15 GPa and temperatures from 1000 to 1600°C using mixtures of carbon nitride (C₃N₄) nanospheres and boron. A new ternary phase with the structure of cubic boron nitride in which some of the nitrogen and boron atoms are replaced by carbon has been obtained at p ? 8 GPa and t ? 1500°C. According to the Rietveld refinement results, its composition is BC_0.47N_0.85.     

Assessment of Surface Texture Bounded by Convex and Concave Parabolic Segments

Russian Engineering Research - Formulas for the probability of filling of surface texture bounded by convex and concave parabolic segments are derived on the basis of geometric and mathematical...     

Three-photon electromagnetically induced absorption and transparency in an inhomogeneously broadened atomic vapour

We study both theoretically and experimentally three-photon electromagnetically induced transparency and electromagnetically induced absorption resonances in inhomogeneously broadened 85 Rb atomic vapour driven by probe and drive laser radiations. We observe narrow Doppler-free absorption as well as transmission resonances for the probe field when the driving laser field is redshifted from the D₁ or D₂ lines of ⁸⁵Rb; the frequency difference between the drive and probe fields is equal to the hyperfine splitting of the ground state of the atoms, and the probe field is tuned to the centre of the Doppler broadened atomic transition. We theoretically study the spectroscopic effect in both homogeneously and inhomogeneously broadened media. Our numerical simulations are in good agreement with the experimental results.     

High-pressure,high-temperature study of GeS2 and GeSe2

Phase transitions of the GeX₂ (X = S, Se) dichalcogenides have been studied at pressures of up to p ? 8 GPa and temperatures from 675 to 1375 K, and portions of their p-T phase diagrams have been constructed using our and previous experimental data. The crystal structure of the GeS₂-III phase has been refined by the Rietveld method (HgI₂ structure, P4₂/nmc, a = 3.46906(2) Å, c = 10.9745(1) Å, Z = 2, D _x = 3.438 g/cm³, R = 0.06). GeSe₂-III crystals have been grown for the first time at p ? 7 GPa in the temperature range 875–1275 K. The unit-cell parameters of GeSe₂-III (hex) are a = 6.468 ± 0.004 Å and c = 24.49 ± 0.10 Å (D _meas = 5.16 g/cm³, D _x = 5.18 g/cm³, Z = 12).     

Compact diode-laser based rubidium frequency reference

The performance of a simple microwave frequency reference based on Raman scattering in an atomic vapor is examined. This reference has the potential to be compact, low-power, and insensitive to acceleration. Several design architectures have been evaluated with a table-top experiment in order to guide the future development of a compact system. Fractional frequency deviations of 相似文献   

High-Pressure Phase Transitions of M2O5(M = V, Nb, Ta) and Thermal Stability of New Polymorphs

The stability regions of various M₂O₅(M = V, Nb, Ta) polymorphs were studied by quenching samples from 600–1300°C at pressures in the range 5.0–8.0 GPa. Above 7.0 GPa, Nb₂O₅and Ta₂O₅were found to have a new polymorph (Zphase) in which the metal atoms are in sevenfold coordination. In addition, the samples contained the high-pressure polymorph B-M₂O₅ with the rutile-related structure. Differential thermal analysis at atmospheric pressure showed a weak, broad exotherm, indicating that the transformation of Z-M₂O₅into other phases begins at 100–150°C and reaches completion at 400°C in Nb₂O₅and 550°C in Ta₂O₅. At p 8.0 GPa and t> 750°C, a new high-pressure phase B-V₂O₅, isostructural with B-Nb₂O₅, was identified (a= 11.9640(6) Å, b= 4.6986(3) Å, c= 5.3249(3) Å, = 104.338(4)°, V= 290.01 ų, Z= 4, sp. gr. C2/c). At atmospheric pressure, B-V₂O₅transforms into -V₂O₅, with two strong exothermic peaks at 230 and 270°C. Experiments in the pressure range 5.0–8.0 GPa confirmed that the high-pressure phase -V₂O₅has a broad stability region.     

Preparation of boron microcrystals via high-pressure,high-temperature pyrolysis of decaborane,B<Subscript>10</Subscript>H<Subscript>14</Subscript>

Crystalline boron has been prepared via high-pressure, high-temperature pyrolysis of decaborane, B₁₀H₁₄. We obtained α-tetragonal boron crystals at a pressure of 8–9 GPa and temperatures in the range 1100–1600°C and β-rhombohedral boron intergrowths at 3 GPa and 1200°C.