Combined MCDM techniques for exploring stock selection based on Gordon model

Basing on the Gordon model perspective and applying multiple criteria decision making (MCDM), this research explores the influential factors and relative weight of dividend, discount rate, and dividend growth rate. The purpose is to establish an investment decision model and provides investors with a reference/selection of stocks most suitable for investing effects to achieve the greatest returns. Taking full consideration of the interrelation effect among variables of the decision model, this paper introduced analytical network process (ANP) and examined leading electronics companies spanning the hottest sectors of lens, solar, and handset by experts. Empirical findings indicated that dividend was affected by industry outlook, earnings, operating cash flow, and dividend payout rate; discount rate was affected by market β and risk-free rate; and dividend growth rate was affected by earnings growth rate and dividend payout growth rate. Also, according to literatures, discount rate possessed a self-effect relationship. Among the eight evaluation criteria, market β was the most important factor influencing investment decisions, followed by dividend growth rate and risk-free rate. In stock evaluations, leadership companies in the solar industry outperformed those in handset and lens, becoming investors’ favorite stock group at the time that this research was conducted.     

InGaP/InGaAs Pseudomorphic Heterodoped-Channel FETs With a Field Plate and a Reduced Gate Length by Splitting Gate Metal

Depositing gate metal across a step undercut between the Schottky barrier layer and the insulator-like layer is employed to obtain a reduced gate length of 0.4 mum with an additional 0.6-mum field plate from a 1-mum gate window. Most dc and ac characteristics including current density (I_DSS=451mA/mm), transconductance (g_m,max=225mS/mm), breakdown voltages (V_BD(DS)/V _BD(GD)=22/-25.5V), gate-voltage swing (GVS=2.24V), cutoff, and maximum oscillation frequencies (f_t/f_max=17.2/32GHz) are improved as compared to those of a 1-mum gate device without field plate. At a V_DS of 4.0 V, a maximum power added efficiency of 36% with an output power of 13.9 dBm and a power gain of 8.7 dB are obtained at a frequency of 1.8 GHz. The saturated output power and the linear power gain are 316 mW/mm and 13 dB, respectively     

High performance data compression method with pattern matching for biomedical ECG and arterial pulse waveforms

Biomedical waveforms, such as electrocardiogram (ECG) and arterial pulse, always possess a lot of important clinical information in medicine and are usually recorded in a long period of time in the application of telemedicine. Due to the huge amount of data, to compress the biomedical waveform data is vital. By recognizing the strong similarity and correlation between successive beat patterns in biomedical waveform sequences, an efficient data compression scheme mainly based on pattern matching is introduced in this paper. The waveform codec consists mainly of four units: beat segmentation, beat normalization, two-stage pattern matching and template updating and residual beat coding. Three different residual beat coding methods, such as Huffman/run-length coding, Huffman/run-length coding in discrete cosine transform domain, and vector quantization, are employed. The simulation results show that our compression algorithms achieve a very significant improvement in the performances of compression ratio and error measurement for both ECG and pulse, as compared with some other compression methods.     

InP/GaAsSb type-II DHBTs with GaAsSb/lnGaAs superlattice-base and GaAsSb bulk-base structures

High-performance InP/GaAsSb double heteroj unction bipolar transistor (DHBT) employing GaAsSb/lnGaAs superlattice-base structure is demonstrated and compared with GaAsSb bulk-base structure by two-dimensional simulation analysis. The proposed device exhibits a higher current gain of 257 than the conventional InP/GaAsSb type-II DHBT with a lower current gain of 180, attributed to the tynneling behavior of minority carriers in the GaAsSb/lnGaAs superlattice-base region under large forward base—emitter bias. In addition, a larger unity gain cutoff frequency of 19.1 GHz is botained for the superlattice-base device than that of 17.2 GHz for the bulk-base device.     

A novel InGaP/GaAs S-shaped negative-differential-resistance (NDR)switch for multiple-valued logic applications

In this paper, a novel InGaP/GaAs multiple S-shaped negative-differential-resistance (NDR) switch based on a heterostructure-emitter bipolar transistor (HEBT) structure is fabricated and demonstrated. An interesting multiple NDR phenomenon resulting from an avalanche multiplication and successive two-stage barrier lowering process is observed under the inverted operation mode. The three-terminal-controlled and temperature-dependent NDR characteristics are also investigated. In addition, a typical transistor performance is found under the normal operation mode. Consequently, owing to the presented different stable operation points and transistor action, the studied device shows a good potential for multiple-valued logic and analog amplification circuit applications     

Multiple-route current-voltage (I-V) characteristics of GaAs-InGaAsmetal-insulator-semiconductor-like (MIS) structure for multiple-valuedlogic applications

A new GaAs-In_xGa_1-xAs metal-insulator-semiconductor-like (MIS) device with the interesting dual-route and multiple-negative-differential-resistance (MNDR) current-voltage (I-V) characteristics has been fabricated and demonstrated. These performances are caused by the successive barrier lowering and potential redistribution effect. A novel multiple-route I-V characteristic is obtained in the studied device at low temperature (-130°C). This performance is different from the previously reported NDR switching device and has not yet been found in other devices. The interesting property of the studied structure provides a promising candidate for switching device applications     

Temperature-dependent investigation of a high-breakdown voltage andlow-leakage currentGa0.51In0.49P/In0.15Ga0.85Aspseudomorphic HEMT

We reported a newly designed double delta-doped GaInP/InGaAs pseudomorphic HEMT with high temperature-dependent performances. In addition to the novel aspects of the proposed HEMT structure, temperature-dependent behaviors including a high-voltage (40 V) and a low-leakage current (17 nA/mm) are further improved by eliminating mesa-sidewall effect. We obtained nearly current-independent transconductance in the temperature of 300-450 K. The measured current gain cutoff frequency f_T and maximum oscillation frequency f _max for a 1-μm gate device are 12 and 28.4 GHz, respectively     

New self-aligned T-gate InGaP/GaAs field-effect transistors grownby LP-MOCVD

This paper reports on self-aligned T-gate InGaP/GaAs FETs using n ⁺/N⁺/δ(P⁺)/n structures. N⁺ -InGaP/δ(P⁺)-InGaP/n-GaAs forms a planar-doped barrier. The inherent ohmic gate of camel-gate FETs together with a highly selective etch between an InGaP and a GaAs layers offers a self-aligned T-shape gate with a reduced effective length. A fabricated device with a reduced gate dimension of 1.5×100 (0.6×100) μm² obtained from 2×100 (1×100) μm² gate metal exhibits an extrinsic transconductance, unity-current gain frequency, and unity-power gain frequency of 78 (80) mS/mm, 9 (19.5), and 28 (30) GHz, respectively     

Temperature-dependence investigation of a high-performance inverteddelta-doped V-shaped GaInP/InxGa1-xAs/GaAspseudomorphic high electron mobility transistor

A newly designed inverted delta-doped V-shaped GaInP/In_xGa_1-xAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) has been successfully fabricated and studied. For a 1×100 μm² device, a high gate-to-drain breakdown voltage over 30 V at 300 K is found. In addition, a maximum transconductance of 201 mS/mm with a broad operation regime for 3 V of gate bias (565 mA/mm of drain current density), a very high output drain saturation current density of 826 mA/mm, and a high DC gain ratio of 575 are obtained. Furthermore, good temperature-dependent performances at the operating temperature ranging from 300 to 450 K are found. The unity current gain cutoff frequency f_T and maximum oscillation frequency f_max up to 16 and 34 GHz are obtained, respectively. Meanwhile, the studied device shows the significantly wide and flat gate bias operation regime (3 V) for microwave performances     

CrossbowCam: a handheld adjustable multi-camera system

Multimedia Tools and Applications - This paper presents a novel multi-functional, low-cost handheld multi-camera system (one dimensional camera array) - “CrossbowCam”. The CrossbowCam...