III–V super-lattice SPST/SPMT pin switches for THz communication: theoretical reliability and experimental feasibility studies

Microsystem Technologies - A physics-based Quantum-Modified CLassical Drift–Diffusion (QMCLDD) non-linear mathematical model has been developed for design and characterisation of GaN/AlGaN...     

Design and characterization of asymetrical super-lattice Si/4H-SiC pin photo diode array: a potential opto-sensor for future applications in bio-medical domain

Microsystem Technologies - Photo-sensors are integral part of different bio-medical diagnostic equipment. Each type of bio-molecules possess unique spectral fingerprint in visible wavelength region...     

Setup for in situ deep level transient spectroscopy of semiconductors during swift heavy ion irradiation

A computerized system for in situ deep level characterization during irradiation in semiconductors has been set up and tested in the beam line for materials science studies of the 15 MV Pelletron accelerator at the Inter-University Accelerator Centre, New Delhi. This is a new facility for in situ irradiation-induced deep level studies, available in the beam line of an accelerator laboratory. It is based on the well-known deep level transient spectroscopy (DLTS) technique. High versatility for data manipulation is achieved through multifunction data acquisition card and LABVIEW. In situ DLTS studies of deep levels produced by impact of 100 MeV Si ions on Aun-Si(100) Schottky barrier diode are presented to illustrate performance of the automated DLTS facility in the beam line.     

Reactive flash sintering: MgO and α-Al2O3 transform and sinter into single-phase polycrystals of MgAl2O4

We show that flash experiments with three phase mixed-powders of yttria-stabilized zirconia (8YSZ), MgO, and α-Al₂O₃ not only produce polycrystals of high density, but also the transformation of magnesia and alumina into single-phase spinel. The presence of zirconia facilitates the onset of the flash. The sintering experiments in the laboratory were extended to live experiments at the National Synchrotron Light Source II at Brookhaven National Laboratory in order to measure the time-dependent evolution of single-phase spinel. The phase transformation occurred in <3 seconds during Stage II. Later, during Stage III the cubic zirconia transformed partly into the monoclinic phase, which reverted back to the cubic phase when the flash was extinguished by turning off the current to the specimen. The results underpin a recent report on the synthesis of single-phase bismuth ferrite from constituent oxides in reactive flash experiments, raising the specter of flash as a method for synthesis as well as sintering of complex oxide ceramics. The role of zirconia in catalyzing the flash in the present study is discussed.     

Water Seepage Mapping in an Underground Coal-Mine Barrier Using Self-potential and Electrical Resistivity Tomography

Mine Water and the Environment - Seepage of water through an underground coal-mine barrier is a common indicator of a potential hydrogeological hazard. The Jharia coalfield has witnessed several...     

Nanopatterning of ZnS thin film surfaces by keV ion beam irradiation

The nanopatterning of crystalline ZnS thin film surfaces under 80 keV Ar⁺ ions irradiation at incident angles of 0°, 20°, and 40° is presented. Structural and morphological changes have been investigated by means of X-ray diffraction and atomic force microscopy respectively. The surface morphology mainly consists of nanograins of spherical shape in pristine and films irradiated at normal incidence. The irradiation at oblique angle (20° and 40°) leads to the formation of ripple structures on the surface with a wave vector parallel to the ion beam direction. The existing theories for the ripple formation are invoked to explain the observed surface structure.     

Investigations on the effect of 100 MeV Ni ions irradiated chloride vapour phase epitaxy (Cl-VPE) grown GaN epilayers

Gallium nitride (GaN) epilayers have been grown by chloride vapour phase epitaxy (Cl-VPE) technique and the grown GaN layers were irradiated with 100 MeV Ni ions at the fluences of 5 × 10¹² and 2 × 10¹³ ions/cm². The pristine and 100 MeV Ni ions irradiated GaN samples were characterized using X-ray diffraction (XRD), UV-visible transmittance spectrum, photoluminescence (PL) and atomic force microscopy (AFM) analysis. XRD results indicate the presence of gallium oxide phases after Ni ion irradiation, increase in the FWHM and decrease in the intensity of the GaN (0 0 0 2) peak with increasing ion fluences. The UV-visible transmittance spectrum and PL measurements show decrease in the band gap value after irradiation. AFM images show the nanocluster formation upon irradiation and the roughness value of GaN increases with increasing ion fluences.