下一代无线网络架构

无线局域网(WLAN)技术为家庭和企业用户描绘了美好的蓝图,也吸引着众多半导体和系统设备厂商涌入这一市场。WLAN技术的不断演变,将标准制订团体、互操作性论坛(互操作性是市场进一步接受的关键要求)、产品OEM厂商和相应的半导体厂商紧密联系在一起。     

An application of chemometric techniques to analyze the effects of the wave function modifications on the intermolecular stretching frequencies of the hydrogen-bonded complexes

Factorial design and principal component models are used to determine how ab initio H-bond stretching frequencies depend on characteristics of the molecular orbital wave functions of acetylene–HX, ethylene–HX and cyclopropane–HX π-type hydrogen complexes with X=F, Cl, CN, NC and CCH. The results obtained for the three sets of complexes show that factorial design and principal component analyses complement each other. Factorial design calculations clearly show that these frequencies are affected mostly by inclusion of electron correlation on the calculation level. On average, their values are increased by about 25 cm⁻¹ due to a change from the Hartree–Fock (HF) to Möller–Plesset 2 (MP2) level. Valence, diffuse and polarization main effects as well as valence–diffuse, diffuse–correlation and polarization–correlation interaction effects are also important to better describe a factorial model to the H-bond stretching frequencies of these hydrogen complexes. This simplified model has been successful in reproducing the complete ab initio results, which correspond to two hundred and forty calculations. Principal component analyses applied only to hydrogen-bonded complexes whose experimental frequencies are known, has revealed that the six-dimensional original space can be accurately represented by a bidimensional space defined by two principal components. Its graphical representation reveals that the experimental intermolecular stretching frequencies are in closest agreement with the MP2/6–31+G and MP2/6–311+G ab initio results.     

如何用硅振荡器替代晶体和陶瓷谐振器

对于绝大多数微控制器时钟电路而言，硅振荡器是一种简单且有效的解决方案。与晶体和陶瓷谐振器不同，基于硅材料的定时器具有抗振动、抗撞击和抗电磁干扰的优点。同时，硅振荡器不需要严格匹配的定时元件和线路板走线。     

Effect of hot strip processing during direct charging of thin slabs on the properties of cold strip of LC-steel

Direct charging of thin slabs of low carbon steel (0.05%C) was investigated by using laboratory tests on a thin-slab-casting Simulator linked with the hot deformation Simulator (Wumsi). Starting with a different initial thickness of simulated thin slabs (45 down to 25 mm) the total strain ?∑ was varied. Hot deformation schedules (with and without roughing) with different finishing temperatures T_F lead to some differences in the hot strip microstructure. Nevertheless, after cold rolling and batch annealing, a rather uniform pancake-structure and a pronounced {111}-texture were achieved in the cold strip without any significant relation to the processing routs. The measurement of final mechanical properties proved that a good deep drawability of cold strip can be achieved with direct charging of thin slabs, well comparable to that after a conventional cold charging of thick slabs.     

A Built-in Self-Test Scheme with Diagnostics Support for Embedded SRAM

In this paper we propose a novel built-in self-test (BIST) design for embedded SRAM cores. Our contribution includes a compact and efficient BIST circuit with diagnosis support and an automatic diagnostic system. The diagnosis module of our BIST circuit can capture the error syndromes as well as fault locations for the purposes of repair and fault/failure analysis. In addition, our design provides programmability for custom March algorithms with lower hardware cost. The combination of the on-line programming mode and diagnostic system dramatically reduces the effort in design debugging and yield enhancement. We have designed and implemented test chips with our BIST design. Experimental results show that the area overhead of the proposed BIST design is only 2.4% for a 128 KB SRAM, and 0.65% for a 2 MB one.     

汽车电子系统要求低静态电流

如今的汽车电子系统越来越复杂。同时，汽车环境对任何电子产品来说都是很大的挑战，因为汽车电子系统要求运行电压很宽，并且有很大的瞬态电压和温度变化。另外，性能要求也越来越高，需要多个供应电压以满足系统的不同要求。典型的     

单片同步降压型转换器LTC3416

许多微处理器和数字信号处理器(DSP)需要一个核心电源和一个在启动期间必须进行排序的输入／输出(I／O)电源。如果未经过适当的电源排序，可能发生闭锁或过流，从而损害微处理器的I／O端口或诸如存储器、逻辑电路、现场可编程门阵列(FPGA)或数据转换器之类支持设备的I／O端口。为了确保在主电源电压未被适当偏置之前I／O负载不被驱动，对核心电源电压和I／O电源电压进行跟踪是必要的。