Monascus-fermented grain vinegar enhances glucose homeostasis through the IRS-1/PI3K/Akt and AMPK signaling pathways in HepG2 cell and db/db mice

Food Science and Biotechnology - MV was reported to have beneficial effects in ameliorating insulin resistance in db/db mice, but the intrinsic mechanisms for glucose homeostasis are unclear. This...     

Tangeretin Ameliorates Glucose-Induced Podocyte Injury through Blocking Epithelial to Mesenchymal Transition Caused by Oxidative Stress and Hypoxia

Podocyte injury inevitably results in leakage of proteins from the glomerular filter and is vital in the pathogenesis of diabetic nephropathy (DN). The underlying mechanisms of podocyte injury facilitate finding of new therapeutic targets for DN treatment and prevention. Tangeretin is an O-polymethoxylated flavone present in citrus peels with anti-inflammatory and antioxidant properties. This study investigated the renoprotective effects of tangeretin on epithelial-to-mesenchymal transition-mediated podocyte injury and fibrosis through oxidative stress and hypoxia caused by hyperglycemia. Mouse podocytes were incubated in media containing 33 mM glucose in the absence and presence of 1–20 μM tangeretin for up to 6 days. The in vivo animal model employed db/db mice orally administrated with 10 mg/kg tangeretin for 8 weeks. Non-toxic tangeretin inhibited glucose-induced expression of the mesenchymal markers of N-cadherin and α-smooth muscle actin in podocytes. However, the reduced induction of the epithelial markers of E-cadherin and P-cadherin was restored by tangeretin in diabetic podocytes. Further, tangeretin enhanced the expression of the podocyte slit diaphragm proteins of nephrin and podocin down-regulated by glucose stimulation. The transmission electron microscopic images revealed that foot process effacement and loss of podocytes occurred in diabetic mouse glomeruli. However, oral administration of 10 mg/kg tangeretin reduced urine albumin excretion and improved foot process effacement of diabetic podocytes through inhibiting loss of slit junction and adherenes junction proteins. Glucose enhanced ROS production and HIF-1α induction in podocytes, leading to induction of oxidative stress and hypoxia. Similarly, in diabetic glomeruli reactive oxygen species (ROS) production and HIF-1α induction were observed. Furthermore, hypoxia-evoking cobalt chloride induced epithelial-to-mesenchymal transition (EMT) process and loss of slit diaphragm proteins and junction proteins in podocytes, which was inhibited by treating submicromolar tangeretin. Collectively, these results demonstrate that tangeretin inhibited podocyte injury and fibrosis through blocking podocyte EMT caused by glucose-induced oxidative stress and hypoxia.     

Preparation and characterization of thermoresponsive poly(N-isopropylacrylamide-co-N-isopropylmethacrylamide) hydrogel materials for smart windows

In this study, a series of thermoresponsive cross-linked copolymer poly [N-isopropylacrylamide(NIPAm)-co-N-isopropylmethacrylamide(NIPMAm)] (P-M series samples: P-M-0, 10, 20, 30, 40, where numbers are co-monomer contents) hydrogels were prepared by free radical polymerization using the main monomer N-isopropylacrylamide (NIPAm), co-monomer N-isopropylmethacrylamide (NIPMAm), cross-linking agent N, N-methylenebisacrylamide, initiator (ammonium persulfate)/catalyst, and solvent water. In addition, a series of samples [P-G series samples: P-G-0, 10, 20, 30, 40, where numbers are co-solvent glycerol content) were prepared using P-M-40 as components and water/co-solvent glycerol as a mixed solvent. The effects of co-monomer NIPMAm and co-solvent glycerol contents on the lower critical solution temperature (LCST)/freezing temperature and light transmittance as function of temperature of the prepared copolymer gels were investigated. The resulting thermoresponsive polymer gels had LCSTs in the range of 17.9 to 38.7°C and freezing points in the range of 6.3 to −38.5°C. These gels are suitable materials for smart windows that are responsive to various environmental conditions.     

CuO formation control as a function of mixed ratio of Cu-free powders in the synthesis of YBCO superconductors on Cu substrates

YBa₂Cu₃O_x (Y123) superconducting films were fabricated on Cu substrates using a simple screen-printing method, from Cu-free powders (Y₂O₃ and BaCO₃). In the process, CuO, which causes superconducting properties of Y123 films to deteriorate, was formed on the film surface. By varying the atomic ratio of Y to Ba (Y:Ba = 1:1∼1:4), the ratio needed to prevent CuO formation was found for the film surface that had been heat-treated at 980^∘C for 17 s. The film, with the ratio of Y to Ba (Y:Ba = 1:1), is reheat-treated at 930^∘C for 9 min 30 s to form a superconducting Y123 phase. It was possible to prevent CuO formation by controlling the ratio of Cu-free powders in the mixture and to fabricate YBCO superconductors on Cu substrates using a two-step heat-treatment.     

Anti-diabetic effects of mulberry (Morus alba L.) branches and oxyresveratrol in streptozotocin-induced diabetic mice

Food Science and Biotechnology - Despite with accumulating evidences on the anti-diabetic effects of mulberry branch (MB), the major active component for the activity has not been known. Oral...     

Controlled assembly of single SWNTs bundle using dielectrophoresis

We present a mass productive and reproducible assembly technique of a single bundle of single-walled carbon nanotubes (sb-SWNTs) using dielectrophoresis (DEP). Gold electrodes with 10 gaps made via microlithography were used to align the carbon nanotubes (CNTs). The magnitude and type of applied electric field were investigated to verify their effects on CNT assembly. The optimum assembling conditions in which sb-SWNTs could be positioned at a desired site were experimentally identified, and the characteristics of the assembled sb-SWNTs were evaluated from AFM, Raman spectroscopy, and I-V curve. This assembly method has potential for applications, such as gas sensors or electronic devices.     

Analysis and prevention of DRAM latch-up during power-on

The occasional power-on latch-up phenomenon of DRAM modules with a data bus shared by multiple DRAM chips on different modules was investigated and the circuit techniques for latch-up prevention were presented. Through HSPICE simulations and measurements, the latch-up triggering source was identified-to be the excessive voltage drop at the n-well pick-up of the CMOS transmission gate of read data latch circuit due to the short-circuit current which flows when the bus contention occurs during power-on. By extracting the HSPICE Gummel-Poon model parameters of the parasitic bipolar transistors of DRAM chips from the measured I-V and C-V data, HSPICE simulations were performed for the power-on latch-up phenomenon of DRAM chips. Good agreements were achieved between measured and simulated voltage waveforms. In order to prevent the power-on latch-up even when the control signals (RAS, GAS) do not track with the power supply, two circuit techniques were presented to solve the problem. One is to replace the CMOS transmission gate by a CMOS tristate inverter in the DRAM chip design and the other is to start the CAS-BEPORE-RAS (CBR) refresh cycle during power-on and thus disable all the Dout buffers of DRAM chips during the initial power-on period     

Surface properties of Al-doped ZnO thin film before and after CF4/Ar plasma etching

Al-doped ZnO (AZO) is considered as an alternative to transparent conductive oxide materials. Patterning and achieving a stable surface are important challenges in the development and optimization of dry etching processes, which must be overcome for the application of AZO in various devices. Therefore, in this study, the etch rate and surface properties of an AZO thin film after plasma etching using the adaptive coupled plasma system were investigated. The fastest etch rate was achieved with a CF₄/Ar ratio of 50:50 sccm. Regardless of the ratio of CF₄ to Ar, the transmittance of the film in the visible region exceeded 80%. X-ray photoelectron spectroscopy analysis of the AZO thin film confirmed that metal-F bonding persists on the surface after plasma etching. It was also shown that F eliminates O vacancies. Consequently, the work function and bandgap energy increased as the ratio of CF₄ increased. This study not only provides information on the effect of plasma on AZO thin film, but identifies the cause of changes in the device characteristics during device fabrication.