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Masami Ikeda Susumu Fukumoto Hiroshi Takao Shinya Ohtsuka Eiichi Haginomori Masayuki Hikita 《Electrical Engineering in Japan》2002,141(4):16-24
This paper describes the dielectric breakdown characteristics of oil and oil‐impregnated paper for very fast transient (VFT) voltages. Blumlein circuits generate VFT voltages of 60 and 300 ns in a pulse width that simulates disconnecting switching surges in gas‐insulated switch gears. We measured the breakdown voltages of needle‐to‐plane, plane‐to‐plane oil gaps and several pieces of paper between plane electrodes for VFT and lightning impulse voltages. The measured data were formulated in V‐t characteristics and Weibull probability distributions. The inclination n of V‐t characteristics of insulating paper is 150, which is less than n = 13.7 of the plane‐to‐plane oil gap in the VFT time range. The shape parameters of Weibull distribution obtained in this study show that the scattering of breakdown voltages of paper is much less than that of oil. © 2002 Wiley Periodicals, Inc. Electr Eng Jpn, 141(4): 16–24, 2002; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.10043 相似文献
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H. Okamoto 《Journal of Phase Equilibria and Diffusion》2002,23(4):384-385
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1-GHz-spaced 16-channel arrayed-waveguide grating for a wavelength reference standard in DWDM network systems 总被引:3,自引:0,他引:3
We fabricated a 1-GHz-spaced 16-channel arrayed-waveguide grating (AWG) by using a new AWG configuration where the path of each arrayed waveguide winds backward and forward across a 4-in diameter wafer without crossing any other waveguides. The ultra-narrow (< 1 GHz) and stable transmission bands of this AWG can be used to construct a wavelength reference standard covering the S, C, and L bands in the dense wavelength-division-multiplexing network systems whose frequency deviation is /spl plusmn/160 MHz. 相似文献
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Wakejima A. Matsunaga K. Okamoto Y. Ando Y. Nakayama T. Miyamoto H. 《Electronics letters》2005,41(25):1371-1372
A single-ended amplifier using small packaged GaN-FETs exhibits a record 2.14 GHz W-CDMA output power. The amplifier, composed of paralleled 48 mm gate periphery FET die, delivers a peak saturated output power of 371 W with a linear gain of 11.2 dB at a drain voltage of 45 V under 2.14 GHz 3GPP W-CDMA signal input. The output power density (output power/package size) of 1.1 W/mm/sup 2/ is twice as high as that of the existing over 300 W GaAs-FET amplifiers. A low 5 MHz offset ACLR of -36 dBc with a drain efficiency of 24% is also obtained at 8 dB power back off from the saturated output power. 相似文献
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X. S. Ning K. Suganuma T. Okamoto A. Koreeda Y. Miyamoto 《Journal of Materials Science》1989,24(8):2879-2883
Two kinds of additive-free silicon nitride ceramics were brazed with aluminium; one was with as-ground faying surfaces and
the other was with faying surfaces heat-treated at 1073K for 1.8 ksec in air. The heat-treatment of the silicon nitride ceramics
formed a silicon oxynitride layer on the faying surfaces and increased the brazing strength of the joints. A silica-alumina
non-crystalline layer and a β′-sialon layer were formed successively from the aluminium side at the interface of the joints.
The heat-treatment which made the former layer thicker is a necessary process in making reliable, strong brazed joints. 相似文献